Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    8KX8 SRAM Search Results

    8KX8 SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD27C64-25 Rochester Electronics LLC UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-20 Rochester Electronics LLC UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-35 Rochester Electronics LLC UVPROM, 8KX8, 350ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy

    8KX8 SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN


    Original     		PDF LH5164AN

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    BD4822

    Abstract: No abstract text available
    Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized


    Original     		PDF bq4822Y 10-year BD4822

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized


    Original     		PDF bq4822Y 10-year

    IS61SP25636

    Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
    Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B


    Original     		PDF 32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64

    BD4822

    Abstract: No abstract text available
    Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized


    Original     		PDF bq4822Y 536-bit BD4822

    HM65664A

    Abstract: SOJ28
    Text: Temic Semiconductors Part Number Format Temperature Range °G H M 65664A -9 8Kx8 -40 to +85 4.5 to 5.5 35 to 55 5/100 2 to 30 75 to 100 HM 65664A -A 8Kx8 -40 t o +125 4.5 to 5.5 35 to 55 50/500 20 to 200 75 to 100 H M 65664A -2 CL65664 8Kx8 8Kx8 -55 to +125


    OCR Scan     		PDF 5664A CL65664 IL65664 L65664 PDIL28( PDIL28Î S028I SOJ28 HM65664A

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8810H/L Electronic D e s ig n s In o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic •lOiDi Features The EDI8810H/L is a 65,653bit, 6 transistor cell 8Kx8 bit C M O S Static Random A c ce ss Memory C M O S Static R A M organized a s 8Kx8.


    OCR Scan     		PDF EDI8810H/L EDI8810H/L 653bit,

    EDI8808CB

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883, D02VSS A0-A12

    Untitled

    Abstract: No abstract text available
    Text: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package


    OCR Scan     		PDF bq431OY bq4310Y 28-pin, 330-mil 4833YPD bg4310YSH- bq48SH

    80C31 instruction set

    Abstract: BOC31 80C31 F800H MCS-51 80c31 application 685C31
    Text: '<Teï r er~>& EDH 685C31 EEPROM jjPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM 0> 005612 Features The EDH 685C31 ^PAK from EDI is a new series of high density microcomputer modules based on the industry-standard 80C31 single


    OCR Scan     		PDF 685C31 80C31 80C31, 685C31-8CMHR 685C31 -12CMH GU185RF 80C31 instruction set BOC31 F800H MCS-51 80c31 application

    transistor D883

    Abstract: EDI8810HL e255 8KX8-Bit CMOS SRAM
    Text: ^EDI _ EDI8810H/L Electronic D e sig n s I n o * Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic iUMDN Features The EDI8810H/L is a 65,653bit, 6 transistor cell CMOS Static RAM organized as 8Kx8. It is available in both standard H and low power (L)


    OCR Scan     		PDF EDI8810HL EDI8810H/L 653bit, transistor D883 EDI8810HL e255 8KX8-Bit CMOS SRAM

    UPAK

    Abstract: static ram 8KX8 sram 8kx8 memory map
    Text: pS. & • t<b EDH 685C31 ^E D I EEPROM |iPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM O 005612 6 L Features The EDH 685C31 pPAK from EDI is a new series of high density microcomputer modules


    OCR Scan     		PDF 685C31 80C31 685C31 80C31, on85C31-8CMHR 685C31-12CMHR UPAK static ram 8KX8 sram 8kx8 memory map

    1202z

    Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
    Text: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883


    OCR Scan     		PDF 5962-3829409MXA 5962-3829409MYC 5962-3829409MZA 5962-3829411MXA 5962-382941IMYC 2-3H29411MZA 5962-3829413MX 5962-3829413MYC 5962-3829413MZA 5962-3829415MYC 1202z MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: High Performance 8Kx8 CMOS SRAM II AS7C164 AS7C164L 8Kx8 CMOS SRAM Common I/O \F E A T U R E S • Organization: 8,192 words x 8 bits • Easy Memory Expansion with CE1, CE2 and OE Options • High Speed: 12/15/20/25 ns Address access time 3,4,5,6 ns Output Enable access time


    OCR Scan     		PDF AS7C164 AS7C164L 605mW 300mil

    Untitled

    Abstract: No abstract text available
    Text: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)


    OCR Scan     		PDF EDI8810H/L ecEDI8810H/L 8810H/L

    ELECTRONIC DESIGNS INC 91 PAGE 343

    Abstract: E2 SMD Transistor 5962-89598 EDI8810H EDI8810HL
    Text: ^EDI _ EDI8810H/L Electronic Designs I n o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The EDI8810H/L is a 65,653bit, 6 transistor cell C M O S Static R A M organized a s 8Kx8. Random A cce ss Memory It is available in both standard H and low power (L)


    OCR Scan     		PDF EDI8810HL EDI8810H/L 653bit, 128Kx8 ELECTRONIC DESIGNS INC 91 PAGE 343 E2 SMD Transistor 5962-89598 EDI8810H EDI8810HL

    as7c164

    Abstract: No abstract text available
    Text: H ig h P e rfo rm a n ce m 8KX8 RI AS7C164 A S7C I64L CMOS SRAM oa 8Kx8 CMOS SRAM Common I/O Features • Organization: 8,192 words x 8 bits • High speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time


    OCR Scan     		PDF AS7C164 28-pin as7c164

    AS7C164-20PC

    Abstract: AS7C164 000DM 7C164-12 7C164-10
    Text: H igh Perform ance AS7C164 AS7C.164L 8Kx8 CMOS SRAM A 8Kx8 CMOS SRAM Common I /O Features • Organization: 8,192 words x 8 bits • H igh speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time • Low pow er consum ption


    OCR Scan     		PDF AS7C164 28-pin AS7C164-20PC AS7C164 000DM 7C164-12 7C164-10

    A12C

    Abstract: HT6264-70
    Text: HOLTEK& n r HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • O p e ra tin g voltage: 5V Low pow er consum ption - O peration: 200m W typ. - S tandby: 5(iW (typ.) 70ns (max.) high speed access tim e M em ory ex pansion by pin OE • • • • • P in -co m p atib le w ith s ta n d a rd 8Kx8


    OCR Scan     		PDF HT6264-70 200mW 28-pin HT6264-70 536-bit A12C

    HT6264-70

    Abstract: A12C 8Kx8bit
    Text: HOLTEK HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • Com m on I/O u sin g tr i- s ta te o u tp u ts TTL com patible in te rfa c e levels F u lly s ta tic o p era tio n P in -co m p atib le w ith s ta n d a rd 8Kx8 b its of EPR O M /M A SK ROM 28-pin D IP /S D IP /SO P p ackage


    OCR Scan     		PDF HT6264-70 200mW 28-pin 536-bit HT6264-70 A12C 8Kx8bit

    AN923

    Abstract: AN934 M48T559Y M48T59 M4T28-BR12SH1 SOH28 STATIC RAM 16x8 Z623
    Text: w . SGS-THOMSON k7# . OMGMiDlglLECTMMSl _M48T559Y 64K 8Kx8) TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED • SOFTWARE and HARDWARE RESET for WATCHDOG TIMER ■ REGISTER COMPATIBLE with M48T59 TIMEKEEPERSRAM ■ ADDRESS/DATA MULTIPLEXED I/O PINS


    OCR Scan     		PDF M48T559Y M48T59 M48T559Y: SOH28 AN923 AN934 M48T559Y M4T28-BR12SH1 SOH28 STATIC RAM 16x8 Z623

    FF5H

    Abstract: M4T28-BR12SH1 AN923 AN934 M48T559Y M48T59 SOH28 Z623
    Text: w . SGS-THOMSON k7# . OMGMiDlglLECTMMSl _M48T559Y 64K 8Kx8) TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED • SOFTWARE and HARDWARE RESET for WATCHDOG TIMER ■ REGISTER COMPATIBLE with M48T59 TIMEKEEPERSRAM ■ ADDRESS/DATA MULTIPLEXED I/O PINS


    OCR Scan     		PDF M48T559Y M48T59 M48T559Y: SOH28 FF5H M4T28-BR12SH1 AN923 AN934 M48T559Y SOH28 Z623