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    8KX8 EPROM Search Results

    8KX8 EPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD27C64-25 Rochester Electronics LLC UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-20 Rochester Electronics LLC UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-35 Rochester Electronics LLC UVPROM, 8KX8, 350ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy
    AM27C010-55PI-G Rochester Electronics AM27C010 - EPROM - OTP, EPROM - UV 1Mbit 128k x 8 Visit Rochester Electronics Buy

    8KX8 EPROM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IS61SP25636

    Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
    Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B


    Original     		PDF 32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N

    bq4010

    Abstract: bq4010MA bq4010Y bq4010YMA
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010MA bq4010Y bq4010YMA

    C2665

    Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
    Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)


    Original     		PDF CY7C266 CY7C266 600-mil-wide C2665 C2668 7c26 C2662 C266 27C64 R1250 C2666

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y 28-pin 10-year bq4010 536-bit

    bq4010

    Abstract: bq4010Y
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM


    Original     		PDF CY7C266 27C64 600-mil-wide CY7C266

    Untitled

    Abstract: No abstract text available
    Text: static CMOS _ Family of ROMs March 1992 III AMI LOW DENSITY FAMILY OF ROMS Table 1: S6316 S6333/S63332 S63364 S6364 S63128 Process CMOS CMOS CMOS CMOS CMOS Capacity 16K 32K 64K 64K 128K Organization 2Kx 8 4Kx8 8Kx8 8Kx8 16Kx8 Compatible EPROM


    OCR Scan     		PDF S6316 S6333/S63332 S63364 S6364 S63128 16Kx8

    Untitled

    Abstract: No abstract text available
    Text: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package


    OCR Scan     		PDF bq431OY bq4310Y 28-pin, 330-mil 4833YPD bg4310YSH- bq48SH

    2732 cmos eprom

    Abstract: No abstract text available
    Text: A M II.W — Static CMOS Family of ROMs _ March 1992 Table 4 continued : AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63364L S6333L/32 S6316L CMOS CMOS CMOS CMOS 64K 64K 32K 16K Organization 8Kx8 8Kx8


    OCR Scan     		PDF S6364L S63364L S6333L/32 S6316L 250n8, 2732 cmos eprom

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin bq4010YMA-85N -150N. bq4010

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF 4010/b bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,636-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 636-bit 28-pin 10-year o010-70 bq4010Y-70 bq4010YMA-70N bq4010

    bq4010Y-xxxN

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit bq4010YMA-85N -150N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010Y-xxxN

    23C64-A

    Abstract: A2ZA 2564 eprom A921A za4t 23C64
    Text: SILICON INTEGRATED ETE D • fl553aa,i QQ000Q5 3 ■ CMOS M A S K R O M SIS 23C64/SIS 23C64A 8Kx8 CMOS MASK ROM FEATURE PIN ASSIGNMENT •Access time 150/200ns •Single + 5V power supply •Pin Compatible with 2564 EPROM •TT L Compatible inputs and outputs


    OCR Scan     		PDF fl553aa, QQ000Q5 23C64/SIS 23C64A 150/200ns 23C64A 23C64 23C66 23C66A23 23C66/A-20 23C64-A A2ZA 2564 eprom A921A za4t

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically


    OCR Scan     		PDF CY7C266 27C64 CY7C266 600-mil-wide

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit bq4010YMA-85N -150N. bq4010

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit lithi50N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010 bq401

    Untitled

    Abstract: No abstract text available
    Text: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq401 Q/bq4010Y bq4011 144-bit 28-pin 10-year

    Untitled

    Abstract: No abstract text available
    Text: bq 4010/bq 401 OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF 4010/bq bq4010 536-bit 137001e bq4010/bq4010Y bq4010

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary bq4823Y TIMEKEEPER Module with 8Kx8 NVSRAM General Description Features ► Integrated u ltra low-power SRAM, real-time clock, power-fail control circuit, and battery >• Real-time clock counts seconds through years in BCD format ► Frequency te st output for real­


    OCR Scan     		PDF bq4823Y TD4833YPDUM bq48SHX12 bq48SHX12TR

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged


    OCR Scan     		PDF CY7C266 CY7C266 600-mil-wide

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns