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    80V 1A NPN TRANSISTOR Search Results

    80V 1A NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    80V 1A NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A


    Original     		PDF ZXTC6720MC 185mV -220mV DS31929

    DFN3020

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A


    Original     		PDF ZXTC6720MC 185mV -220mV DS31929 DFN3020

    MMDTA06

    Abstract: a06 transistor marking a06
    Text: MMDTA06 ADVANCE INFORMATION 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power


    Original     		PDF MMDTA06 AEC-Q101 J-STD-020 MIL-STD-202, DS35114 MMDTA06 a06 transistor marking a06

    MMDTA06

    Abstract: No abstract text available
    Text: MMDTA06 ADV AN CE I N FORM AT I ON 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power


    Original     		PDF MMDTA06 AEC-Q101 DS35114 MMDTA06

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green DXT5616U 80V NPN MEDIUM POWER TRANSISTOR IN TO126 Features Mechanical Data •    BVCEO > 80V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current Low Saturation Voltage VCE sat < 500mV @ 0.5A


    Original     		PDF DXT5616U 500mV MIL-STD-202, 400mg DS37030

    Untitled

    Abstract: No abstract text available
    Text: BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features     BVCEO > 80V Ic = 1A High Continuous Collector Current


    Original     		PDF BCX5616Q 500mV BCX5316Q AEC-Q101 DS37024

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated BSR43 80V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data •          BVCEO > 80V IC = -1A High Continuous Current Low saturation voltage VCE sat < 250mV @ 150mA Complementary type BSR33


    Original     		PDF BSR43 250mV 150mA BSR33 AEC-Q101 J-STD-020 MIL-STD-202, DS33018

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A


    Original     		PDF ZXTN620MA 185mV AEC-Q101 DFN2020B-3 DS31894

    Untitled

    Abstract: No abstract text available
    Text: 2SCR544P Data Sheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A MPT3 Base Collector Emitter 2SCR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544P 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=1A/50mA)


    Original     		PDF 2SCR544P SC-62) OT-89> 2SAR544P A/50mA) R1102A

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A


    Original     		PDF ZXTN620MA 185mV AEC-Q101 DFN2020B-3 DS31894

    transistor p38

    Abstract: 100 p38 transistor MOSFET 4446 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F
    Text: ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC transistor p38 100 p38 transistor MOSFET 4446 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F

    2N4912

    Abstract: Vceo 80V Ic 1A 2N4900 transistor Ic 1A datasheet NPN IC 1A 80V 1A NPN Transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4912 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation


    Original     		PDF 2N4912 2N4900 500mA 100kHz 2N4912 Vceo 80V Ic 1A 2N4900 transistor Ic 1A datasheet NPN IC 1A 80V 1A NPN Transistor

    TS16949

    Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 TS16949 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541

    T100

    Abstract: 2SCR544P
    Text: Midium Power Transistors 80V / 2.5A 2SCR544P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) (1) 2) High speed switching  Applications


    Original     		PDF 2SCR544P R0039A T100 2SCR544P

    Untitled

    Abstract: No abstract text available
    Text: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6


    Original     		PDF 2SCR544R R1120A

    Untitled

    Abstract: No abstract text available
    Text: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6


    Original     		PDF 2SCR544R 40x40x0 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6


    Original     		PDF 2SCR544R R1010A

    Untitled

    Abstract: No abstract text available
    Text: Midium Power Transistors 80V / 2.5A 2SCR544P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) 2) High speed switching


    Original     		PDF 2SCR544P R0039A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR  FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260.  ORDERING INFORMATION Ordering Number 2SD1898G-x-AB3-R 2SC4617G-x-AE3-R


    Original     		PDF 2SD1898 2SB1260. 2SD1898G-x-AB3-R 2SC4617G-x-AE3-R OT-89 OT-23 2SD1898G QW-R208-030

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1898L-x-AB3-R


    Original     		PDF 2SD1898 2SB1260. OT-89 2SD1898L-x-AB3-R 2SD1898G-x-AB3-R QW-R208-030

    2SB1260

    Abstract: 2SD1898
    Text: UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL


    Original     		PDF 2SD1898 2SB1260. OT-89 200ms QW-R208-030 2SB1260 2SD1898

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL


    Original     		PDF 2SD1898 2SB1260. OT-89 200ms QW-R208-030

    mps3569

    Abstract: ebc Transistor
    Text: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MPS3569 MPS3569 O-92A 625mW 150mA 150mA Oct-96 300uS, ebc Transistor