Kodak KLI-8023
Abstract: CCD linear multispectral trilinear CCD transistor model h1a KLI-8023 KEK-4H0093-KLI-8023-12-5 kli-8013 Marking Code KLI-8023-AAA LDR sensor light dark sensor dark light sensor using LDR AND transistor
Text: SPECIFICATION SUPPLEMENT Revision 4.0 MTD/PS-0219 September 15, 2008 KODAK KLI-8023 IMAGE SENSOR 8002 X 3 TRI-LINEAR CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0219
KLI-8023
MTD/PS-0219
Kodak KLI-8023
CCD linear multispectral
trilinear CCD
transistor model h1a
KEK-4H0093-KLI-8023-12-5
kli-8013
Marking Code KLI-8023-AAA
LDR sensor light dark sensor
dark light sensor using LDR AND transistor
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1gg7-8002
Abstract: 1gg7
Text: Agilent HMMC-5027 2-26.5 GHz Medium Power Amplifier 1GG7-8002 Data Sheet Features • Wide-frequency range: 2-26.5 GHz • Moderate gain: 7 dB • Gain flatness: ±1 dB • Return loss: Input: -13 dB, Output: -11 dB • Low-frequency operation capability:
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HMMC-5027
1GG7-8002
HMMC-5027
5989-6208EN
1gg7-8002
1gg7
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45580
Abstract: 1gg6-8002 TCA 430 1gg6 TCA 975 HMMC-5020 hmmc-5 tca 761
Text: Agilent HMMC-5618 6–20 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:
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HMMC-5618
1GG6-8002
5989-6212EN
45580
TCA 430
1gg6
TCA 975
HMMC-5020
hmmc-5
tca 761
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45580
Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Text: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:
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HMMC-5617
1GG6-8002
HMMC-5617
5989-9479EN
45580
1gg6-8002
4433 fet
tca 761
1gg6
8002 amplifier
HMMC-5618
GaAs MMIC ESD, Die Attach and Bonding Guidelines
agilent HMMC
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MPS5771
Abstract: transistor MPS5771 kli-8013 transistor model h1a KLI8013 LDR sensor light dark sensor kodak ccd kli KLI-8023 ccd linear array sensor LDR curve
Text: Eastman Kodak Company Technical Data Kodak Digital Science KLI-8023 Image Sensor Features • • • • • • • • • • • • • • Tri-Linear Color Array 3 x 8002 pixels 9um2 pixels. 12 line spacing between color channels. Single shift register per channel.
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KLI-8023
74ACT
MPS5771
transistor MPS5771
kli-8013
transistor model h1a
KLI8013
LDR sensor light dark sensor
kodak ccd kli
ccd linear array
sensor LDR curve
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LDR sensor light dark sensor
Abstract: KLI-8023 KEK-4H0093-KLI-8023-12-5 Light Dependent Resistor LDR KLI-2113 KLI-6003 dark light sensor using LDR AND transistor KLI-8811 CCD KODAK KLI-2113 Photodiode Array 32 element
Text: Eastman Kodak Company Technical Data Kodak Digital Science KLI-8023 Image Sensor Features • • • • • • • • • • • • • • Tri-Linear Color Array 3 x 8002 pixels 9um2 pixels. 12 line spacing between color channels. Single shift register per channel.
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KLI-8023
74ACT
com/US/en/dpq/site/SENSORS/name/KLI-8023
product/show/KLI-8023
KLI-8023
LDR sensor light dark sensor
KEK-4H0093-KLI-8023-12-5
Light Dependent Resistor LDR
KLI-2113
KLI-6003
dark light sensor using LDR AND transistor
KLI-8811
CCD KODAK KLI-2113
Photodiode Array 32 element
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AN3844
Abstract: MC56F8006 8002 amplifier jm60 MC56F8002 MC56F8000 FFT DSC freescale MC556 MC56F8013 mosfet triggering circuit for dc motor
Text: Freescale Semiconductor Application Note Document Number: AN3844 Rev. 0, 11/2009 MC56F8006 New Features: PDB, PGA, ADC, and PWM by: XiangJun Rong and KuangXin RegionTechnical Information Center 1 Introduction This application note introduces the new MC56F8006
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AN3844
MC56F8006
MC56F8006
AN3844
8002 amplifier
jm60
MC56F8002
MC56F8000
FFT DSC freescale
MC556
MC56F8013
mosfet triggering circuit for dc motor
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Untitled
Abstract: No abstract text available
Text: , < Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6049 MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . . . designed for general-purpose switching and amplifier applications POWER TRANSISTOR
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2N6049
2N30S4A
300fll,
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81-110 thermistor
Abstract: Cu50 measurement Cu53 rtd PT-100 385 4wire CU53 temperature sensor Landis Ni 1000 THERMISTOR kty kty PT-100 Cu50 RTD KTY81-110
Text: IB IL TEMP 2 RTD INTERBUS Inline Terminal With Two Analog Input Channels for the Connection of Temperature Shunts RTD Data Sheet 5755B 02/2001 5 7 5 5 1 0 0 1 This data sheet is intended to be used in conjunction with the "Configuring and Installing the INTERBUS Inline
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5755B
KTY81
KTY84
16-bterminal
81-110 thermistor
Cu50 measurement
Cu53 rtd
PT-100 385 4wire
CU53
temperature sensor Landis Ni 1000
THERMISTOR kty
kty PT-100
Cu50 RTD
KTY81-110
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Untitled
Abstract: No abstract text available
Text: Electrical contacts CES-CESA-CEI / Amplifier relay AREB-AYRA General Electrical contacts can be fitted to our instruments with nominal diameters 100, 150, 160 mm. They are adjustable from 10% to 90% of F.S. The overall dimensions, mounting and switching arrangements, operating limits pressure and temperature are all given in the corresponding documentation
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UK/11-2008
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Ib il 2 hart
Abstract: 4E20
Text: IB IL AI 2-HART IB IL AI 2-HART-PAC Inline Terminal With Two Analog Input Channels and HART Functionality 6 7 5 8 A 0 0 1 Data Sheet 6758A 08/2002 The terminals IB IL AI 2-HART and IB IL AI 2-HART-PAC only differ in their scope of supply see "Ordering Data" on page 22 . They have the
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gsm signal amplifier
Abstract: base station receiver GSM signal generator mhz gaussian filter prbs generator 8002 amplifier amplifier gsm signal GSM receiver Wideband FM Modulator Wider
Text: Application Note GSM Testing using the 2026 family Signal Generators with Option 116 Option 116 is available on the IFR 2026 family to allow it to generate GSM spectrum signals. The 2026 is ideal for performing tests on GSM multi-carrier amplifiers and GSM receivers.
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8002 amplifier
Abstract: 8002 AUDIO amplifier pliotron 8002 general electric
Text: G L-8 0 0 2 D ESC RIPTIO N & A N D R A T IN G E T I-1 7 5 PAGE 1 4 -4 5 PLIOTRON DESCRIPTIO N The GL-8002 is a three-electrode transmitting tube designed for use as a radio-frequency power amplifier at high frequencies. Multiple leads for both the filament and grid connectors
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GL-8002
K-9033816
ETI-175
K-6912329
8002 amplifier
8002 AUDIO amplifier
pliotron
8002
general electric
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md8003
Abstract: md8002 md8001 65407
Text: MD8001 SILICON MD8002 MD8003 NPN SILICON MULTIPLE TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front-end detectors and tem perature compensation ap plications. •
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MD8001
MD8002
MD8003
MD8001
MD8003
65407
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NS 8002 1151
Abstract: TO-66 CASE
Text: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications
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MIL-S-19500/379
O-116)
NS 8002 1151
TO-66 CASE
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2N5430 MOTOROLA
Abstract: 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428
Text: MOTOROLA SC XSTRS/R 1HE F D § b3b?ES4 GDflMSMb 1 | MOTOROLA 2N5428 TECHNICAL DATA 2N5430 SEMICONDUCTOR thru 7 AM PERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage —
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2N5428
2N5430
O-213AA
C01LECT0R-EMITTER
2N5430 MOTOROLA
2443 MOTOROLA transistor
IC CD 3102
2N5430
2N5428
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2N4888
Abstract: 2N4900 MOTOROLA 2N488 2f5 transistor Motorola 2N4898
Text: 6367254 MOTOROLA SC CXSTRS/R F 96D 8Ö338 D T - z J - i f 2N4898 thru 2N4900 MOTOROLA TECHNICAL DATA MEDIUM-POWER PNP SILICO N TRA N SISTO RS 4 AM PERE . . . designed for driver circuits, switching, and amplifier applications. These high-performance devices feature:
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2N4898
2N4900
2N4900
2N4912
2N4888
2N4900 MOTOROLA
2N488
2f5 transistor
Motorola 2N4898
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te 2443 MOTOROLA transistor
Abstract: 2N6318 2N63 TO-213AA
Text: MOTOROLA SC X S T R S /R 1 HE D I F b3b?254 G0ô4b30 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE SILICON POWER TRANSISTORS , . . designed for general-purpose power amplifier and switching applications, 6 0 -8 0 VOLTS
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2N6049
Abstract: 8002 Amplifier IC SM 8002 SM 8002 C 2443 MOTOROLA transistor 80417
Text: MOTOROLA SC 6367254 DE I t.3t,7SS4 ODflDMl t 1 | - CXS TRS/ R F J M OTO RO LA MOTOROLA SC XSTRS/R F 96.D 8 0 4 1 6 B S E M IC O N D U C T O R 2N6049 T -3 3 -2 ! TECHNICAL DATA MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . designed for general-purpose switching and amplifier applications
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2N6049
8002 Amplifier IC
SM 8002
SM 8002 C
2443 MOTOROLA transistor
80417
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2N4912
Abstract: 2N4912 MOTOROLA
Text: MOTORGLA SC X S T R S /R F 1EE D I b3b?5S4 GQfl4517 2 | SEMICONDUCTOR 2N4912 " ^ 3 3 ' 0 e! MOTOROLA TECHNICAL DATA NPN SILIC O N TRANSISTO R 1 AMPERE . . . designed for driver circuits, switching, and amplifier applications. This high-performance device features:
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GQfl4517
2N4912
2N4912
2N4912 MOTOROLA
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te 2443 MOTOROLA transistor
Abstract: 2N4912
Text: ^ r¡ 6 367254 M O T O R O L A SC CXSTRS/R F DÊ”|fci3bïc!i4 UUÜUddä 96D 8Ö338 _ D if 2N4898 MOTOROLA ES SEMICONDUCTOR thru TECHNICAL DATA 2N4900 M EDIUM -PO W ER PNP S IL IC O N TR A N SISTO R S 4 AMPERE . . . designed for driver circuits, switching, and amplifier applications.
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2N4898
2N4900
te 2443 MOTOROLA transistor
2N4912
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FT152
Abstract: 2N6297 Motorola
Text: MOTORCLA SC XSTRS/R F 15E D I b3b?2S4 OOflMbSa T | 7 "-3 3 -¿ 9 7^33-3/ NPN MOTOROLA 2N6294, 2N629S SEMICONDUCTOR TECHNICAL DATA PNP 2N6296, 2N6297 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed fo r general-purpose amplifier, low-frequency switching
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2N6294,
2N629S
2N6296,
2N6297
2N6296
FT152
2N6297 Motorola
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Untitled
Abstract: No abstract text available
Text: r OCTAVE BAND AFS AMPLIFIERS FREQUENCY MODE! NUMBER RANGE GH^l GAIN IB M m i GAIN N O IS E FI A T N E S S FI G U R E ({IB Max I (dB M axi VSWR VSWR OUTPUT POWER INPUT OUTPUT a 1 dB COMP (M axi (M axi .d B m M in i N O M . DC POWER AFS O U TLIN E i * 1 5 V rn A i D R A W I N G
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1200-09-1QP-4
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2N6300
Abstract: No abstract text available
Text: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching
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L3b7254
2N6053,
2N6054
2N6298,
2N6299
2N6055,
2N6056
2N6300,
2N6301
2N6300
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