7Z88750 Search Results

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Text: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;