Untitled
Abstract: No abstract text available
Text: AOTF7N60FD 600V, 7A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF7N60FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss
|
Original
|
PDF
|
AOTF7N60FD
AOTF7N60FD
AOTF7N60FDL
O-220F
|
Untitled
Abstract: No abstract text available
Text: AOTF7N60FD 600V, 7A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF7N60FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss
|
Original
|
PDF
|
AOTF7N60FD
AOTF7N60FD
AOTF7N60FDL
O-220F
|
k07n120
Abstract: Q67040-S4280 PG-TO-247-3 SKW07N120
Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
|
Original
|
PDF
|
SKW07N120
SKW07N120
k07n120
Q67040-S4280
PG-TO-247-3
|
Untitled
Abstract: No abstract text available
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
|
Original
|
PDF
|
LTC4355
14-Lead
16-Lead
LTC4355,
LTC4352
LTC4354
LTC4357
LTC4358
4355fe
|
LT4352
Abstract: 1000 volt mosfet mosfet irf3710 TRANSZORB 24v DE14 FDB3632 LN1351C MBR10100 IRF3710
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
|
Original
|
PDF
|
LTC4355
14-Lead
16-Lead
LTC4355,
LT4352
LTC4354
LTC4357
LTC4358
4355fd
LT4352
1000 volt mosfet
mosfet irf3710
TRANSZORB 24v
DE14
FDB3632
LN1351C
MBR10100
IRF3710
|
LTC4352
Abstract: lt 0210 ORing fet 48v 5a DE14 FDB3632 LN1351C MBR10100 ZENER DIODE 1.23V 7A, 100v fast recovery diode IRLR3110
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
|
Original
|
PDF
|
LTC4355
14-Lead
16-Lead
LTC4355,
LTC4352
LTC4354
LTC4357
LTC4358
4355fe
LTC4352
lt 0210
ORing fet 48v 5a
DE14
FDB3632
LN1351C
MBR10100
ZENER DIODE 1.23V
7A, 100v fast recovery diode
IRLR3110
|
SKW07N120
Abstract: No abstract text available
Text: Preliminary SKW07N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
|
Original
|
PDF
|
SKW07N120
O-247AC
Q67040-S4280
Mar-00
SKW07N120
|
K02N120
Abstract: No abstract text available
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKB02N120
40lower
P-TO-263-3-2
O-263AB)
SKB02N120
K02N120
K02N120
|
K02N120
Abstract: fast recovery diode 2a trr 200ns
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
SKP02N120
K02N120
fast recovery diode 2a trr 200ns
|
K02N120
Abstract: No abstract text available
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation Short circuit withstand time – 10 s
|
Original
|
PDF
|
SKB02N120
PG-TO-263-3-2
K02N120
|
k07n120
Abstract: PG-TO-247-3 SKW07N120 Diode 25a 800v
Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
|
Original
|
PDF
|
SKW07N120
PG-TO-247-3
K07N120
k07n120
PG-TO-247-3
SKW07N120
Diode 25a 800v
|
SKW07N120
Abstract: inverter 4v to 12v infineon igbt 1200v 600A
Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
|
Original
|
PDF
|
SKW07N120
40lower
P-TO-247-3-1
O-247AC)
O-247AC
Q67040-S4280
Jul-02
SKW07N120
inverter 4v to 12v
infineon igbt 1200v 600A
|
Untitled
Abstract: No abstract text available
Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
|
Original
|
PDF
|
SKW07N120
SKW07N120
O-247AC
Q67040-S4280
Jan-02
|
Untitled
Abstract: No abstract text available
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors Description Features n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
|
Original
|
PDF
|
LTC4355
LTC4355,
10-Bit
4355ff
com/LTC4355
|
|
|
K02N120
Abstract: k02n12 SKP02N120
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
SKP02N120
K02N120
k02n12
|
Untitled
Abstract: No abstract text available
Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • Lower Eoff compared to previous generation Short circuit withstand time – 10 s Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers:
|
Original
|
PDF
|
SKW07N120
PG-TO-247-3
K07N120
|
SKP02N120
Abstract: 15v 60w smps smps 10w 5V SKB02N120
Text: SKP02N120 Preliminary SKB02N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter
|
Original
|
PDF
|
SKP02N120
SKB02N120
O-220AB
Q67040-S4278
O-263AB
Q67040-S4279
Mar-00
SKP02N120
15v 60w smps
smps 10w 5V
SKB02N120
|
Q67040-S4279
Abstract: FAST RECOVERY DIODE 200ns SKB02N120 FAST RECOVERY DIODE 200ns 2a 15v 60w smps SKP02N120
Text: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
|
Original
|
PDF
|
SKP02N120
SKB02N120
40lower
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
O-263AB)
O-220AB
Q67040-S4278
Q67040-S4279
FAST RECOVERY DIODE 200ns
SKB02N120
FAST RECOVERY DIODE 200ns 2a
15v 60w smps
SKP02N120
|
k02n120
Abstract: PG-TO-263-3-2 SKB02N120 k02n12
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
|
Original
|
PDF
|
SKB02N120
PG-TO-263-3-2
k02n120
PG-TO-263-3-2
SKB02N120
k02n12
|
Untitled
Abstract: No abstract text available
Text: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
|
Original
|
PDF
|
SKP02N120
SKB02N120
SKB02N120
O-220AB
O-263AB
Q67040-S4278
Q67040-S4279
Jan-02
|
K02N120
Abstract: No abstract text available
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
SKP02N120
K02N120
|
Untitled
Abstract: No abstract text available
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation Short circuit withstand time – 10 s
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
|
K07N120
Abstract: SKW07N120 PG-TO-247-3-21
Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
|
Original
|
PDF
|
SKW07N120
PG-TO-247-3-1
O-247AC)
K07N120
PG-TO-247-3-21
K07N120
SKW07N120
PG-TO-247-3-21
|
k02n120
Abstract: 15v 60w smps smps 10w 5V PG-TO-220-3-1 SKP02N120 fast recovery diode 2a trr 200ns
Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
|
Original
|
PDF
|
SKP02N120
40lower
PG-TO-220-3-1
O-220AB)
k02n120
15v 60w smps
smps 10w 5V
PG-TO-220-3-1
SKP02N120
fast recovery diode 2a trr 200ns
|
