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    77N TRANS Search Results

    77N TRANS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    77N TRANS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AMC Connector Cinch Advanced Mezzanine Card Connector The Performance Advantages of Compression in a Reliable One-Piece Contact Design Technology The Cinch ZTXT M AMC Connector is a compression style mezzanine connector solution which provides superior performance for standard


    Original     		PDF 12GHz

    Untitled

    Abstract: No abstract text available
    Text: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purposer Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A · Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Maximum Ratings (Ta = 25°C)


    Original     		PDF S5277B S5277G S5277J S5277N S5277B, S5277G, S5277J, S5277B S5277G

    77N TOSHIBA

    Abstract: S5277N diode 77G Toshiba rectifier S5277B S5277G S5277J 77g toshiba S5277
    Text: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purposer Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Maximum Ratings (Ta = 25°C)


    Original     		PDF S5277B S5277G S5277J S5277N S5277B, S5277G, S5277J, S5277B S5277G 77N TOSHIBA S5277N diode 77G Toshiba rectifier 77g toshiba S5277

    S5277N

    Abstract: S5277 S5277B S5277G S5277J
    Text: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purpose Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Maximum Ratings (Ta = 25°C)


    Original     		PDF S5277B S5277G S5277J S5277N S5277B, S5277G, S5277J, S5277B S5277G S5277N S5277

    S5277N

    Abstract: No abstract text available
    Text: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purpose Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF S5277B S5277G S5277J S5277N S5277B, S5277G, S5277J, S5277N

    S5277N

    Abstract: S5277 S5277B S5277G S5277J
    Text: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B, S5277G, S5277J, S5277N General Purpose Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100~1000 V Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF S5277B S5277G S5277J S5277N S5277B, S5277G, S5277J, S5277B S5277G S5277N S5277

    Untitled

    Abstract: No abstract text available
    Text: S5277B,S5277G,S5277J,S5277N TOSHIBA Rectifier Silicon Diffused Type S5277B,S5277G,S5277J,S5277N General Purpose Rectifier Applications Unit: mm • Average Forward Current: IF AV = 1.0 A • Repetitive Peak Reverse Voltage: VRRM = 100 to 1000 V Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF S5277B S5277G S5277J S5277N

    THERMAL Fuse m20 tf 115 c

    Abstract: mux 232n 144n 129P 244n
    Text: ispXPGA Family TM March 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory


    Original     		PDF 10MHz 320MHz 250ps 414Kb 1200K LFX1200C-03F900I LFX1200B-04FE900C) LFX1200B-03FE900I) TN1028) THERMAL Fuse m20 tf 115 c mux 232n 144n 129P 244n

    a4 81p

    Abstract: gsr 600
    Text: ispXPGA Family TM March 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory


    Original     		PDF 10MHz 320MHz 250ps 414Kb Perf3F900I LFX1200C-03F900I 1200K LFX1200B-04FE900C) LFX1200B-03FE900I) a4 81p gsr 600

    118p

    Abstract: 31n w6 resistor 85n a4 81p mux 232n
    Text: ispXPGA Family TM May 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory


    Original     		PDF 10MHz 320MHz 250ps 414Kb LFX1200B-04FE900C) LFX1200B-03FE900I) TN1028) TN1003) TN1000) TN1026) 118p 31n w6 resistor 85n a4 81p mux 232n

    LFX200B-03f256i

    Abstract: D 92 02 78P DIODE PAIR 16X1 16X2 05F256
    Text: ispXPGA Family TM September 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory


    Original     		PDF 10MHz 320MHz 250ps 414Kb -04F256 -03F256I. TN1028) TN1003) TN1000) TN1026) LFX200B-03f256i D 92 02 78P DIODE PAIR 16X1 16X2 05F256

    Untitled

    Abstract: No abstract text available
    Text: ispXPGA Family TM July 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory


    Original     		PDF 10MHz 320MHz 250ps -04F256 -03F256I. TN1028) TN1003) TN1000) TN1026) TN1020)

    LFX200B-03f256i

    Abstract: B17B10
    Text: ispXPGA Family TM July 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory


    Original     		PDF 10MHz 320MHz 250ps 414Kb -04F256 -03F256I. TN1028) TN1003) TN1000) TN1026) LFX200B-03f256i B17B10

    booth multiplier

    Abstract: 97p sped 16X1 16X2 LFX200B-03f256i e30 c15 100 12p
    Text: ispXPGA Family TM January 2004 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory


    Original     		PDF 10MHz 320MHz 250ps 414Kb -04F256 -03F256I. TN1028) TN1003) TN1000) TN1026) booth multiplier 97p sped 16X1 16X2 LFX200B-03f256i e30 c15 100 12p

    8b/10b-Serializer Coding Example

    Abstract: U1 V1 and W1 is delta connections TOP 221P equivalent top 245p 235N 58p power control carry look ahead adder CSB 500 F 30p D 92 02 78P DIODE FPBGA-256
    Text: ispXPGA Family Includes High, Performance Low-Cost “E-Series” July 2004 • Non-volatile, Infinitely Reconfigurable • Microprocessor configuration interface • Program E2CMOS while operating from SRAM • Instant-on - Powers up in microseconds via


    Original     		PDF 414Kb LFX1200EB-03FE680I LFX1200EC-03FE680I TN1028) TN1003) TN1000) TN1026) TN1020) 8b/10b-Serializer Coding Example U1 V1 and W1 is delta connections TOP 221P equivalent top 245p 235N 58p power control carry look ahead adder CSB 500 F 30p D 92 02 78P DIODE FPBGA-256

    Untitled

    Abstract: No abstract text available
    Text: ispXPGA Family June 2004 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Flexible Programming, Reconfiguration, and Testing • Instant-on - Powers up in microseconds via on-chip E2CMOS® based memory • No external configuration memory


    Original     		PDF 414Kb TN1028) TN1003) TN1000) TN1026) TN1020)

    cea f23

    Abstract: No abstract text available
    Text: ispXPGA Family Includes High, Performance Low-Cost “E” Series July 2004 • Non-volatile, Infinitely Reconfigurable • Microprocessor configuration interface • Program E2CMOS while operating from SRAM • Instant-on - Powers up in microseconds via


    Original     		PDF 10MHz 320MHz 250ps LFX1200EB-03FE680I LFX1200EC-03FE680I TN1028) TN1003) TN1000) TN1026) TN1020) cea f23

    Untitled

    Abstract: No abstract text available
    Text: TERM. NO.’s FOR REF. ONLY - A - £ i.0 0 4 [.1 0 ] ^ .2 1 0 MAX. [5 .3 3 ] DOT LOCATES TERM. #1 \ 77n + n i n .5 1 0 MAX. [1 2 .9 5 ] .0 7 5 REF. [1 .9 1 ] "7 .0 1 8 X .0 1 0 1 6 [.4 6 X .2 5 ] .0 0 4 MIN. LOT CODE & DATE CODE [.10] .0 3 0 ± . 0 1 0 ( 1 6 )


    OCR Scan     		PDF E205930 E205930 51114R

    33077

    Abstract: A77C TGC-109-P0O pci-e card drawing cd-1 94v-0 B77C 100WI
    Text: T H IS DRAW ING IS U N P U B L IS H E D . RELEASED FOR ALL P U BLIC ATIO N RIG HTS } • R ES E R V E D . DW BY - COPYRIGHT R E V IS IO N S LOC LTR B2 H IM A PIN PIN B 77P +12' SECTION RE V I S E D PER DATE DWN HMR Rl 3APR- E C O -11 -00530 ' APVD NP T P


    OCR Scan     		PDF 00GSING TGC-109-P0O 33077 A77C pci-e card drawing cd-1 94v-0 B77C 100WI

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device teatures very low on-state resistance


    OCR Scan     		PDF BUK7528-55 -T0220A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device teatures very low on-state resistance


    OCR Scan     		PDF BUK7535-55 -T0220A

    ci 4410

    Abstract: IRL 3038 TA 7719P KIA7719S KIA7721S KIA7723S KIA7725S KIA7727S KIA7733S KIA7734S
    Text: Under Development APPLICATIONS 1 As Control Circuit of B attery-B acked Memory. (2) As M easure A gainst Erroneous Operations at Power ON-OFF. (3) As M easure A gainst System Runaway at Instantaneous Break of Power Supply etc. (4) As Resetting Function for the CPU-M ounted Equipment,


    OCR Scan     		PDF OT-23 OT-23 ci 4410 IRL 3038 TA 7719P KIA7719S KIA7721S KIA7723S KIA7725S KIA7727S KIA7733S KIA7734S

    Untitled

    Abstract: No abstract text available
    Text: 6 VOLT ENHANCED POSITIVE LOCAL VOLTAGE REGULATOR ISSU E 1 - AU G UST 1996 DEVICE DESCRIPTION The devices are suited to local voltage regulation applications, where problems could be encountered with distributed single source regulation, as well as more general


    OCR Scan     		PDF ZSAT600 22KHz 200KHz. 100nF 200nF ZSAT600 OT223 ZSAT600N8 ZSAT600G

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372V320 8 0BK4 KMM372V320(8)0BK4 Fast Page Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KM M372V320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V320(8)0B consists of thirty-six CMOS 16Mx4bits


    OCR Scan     		PDF KMM372V320 16Mx4, M372V320 32Mx72bits 16Mx4bits 400mil 168-pin