hengstler 890 manual
Abstract: hengstler 890 hengstler 890 counter hengstler, 890 signo 727 Hengstler relay 890 Hengstler Hengstler counter 890 signo 727 operation manual Hengstler counter
Text: Betriebsanleitung Operating instructions signo 727.1 Positionsanzeige mit/ohne Grenzwerte Position-Indicator with/without limit values Inhaltsverzeichnis Contents 1. 2. 2.1. 2.2. 2.2.1 2.2.2 2.3. 3. 3.1. 3.2. 3.3. 4. 4.1 4.2 4.3 4.4 5. 6. 7. 7.1. 7.2. 7.3
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D-78550
D-78554
hengstler 890 manual
hengstler 890
hengstler 890 counter
hengstler, 890
signo 727
Hengstler relay 890
Hengstler
Hengstler counter 890
signo 727 operation manual
Hengstler counter
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hengstler 890
Abstract: hengstler 890 counter 727 Transistor power values Hengstler relay 890 hengstler, 890 signo 727 pulse counter hengstler Hengstler counter 890 bi colour led 230v hengstler signo
Text: Operating Instructions Contents 1. Safety instructions 2. Mounting of the position indicator 2.1 Mounting the position indicator 2.2. Connections 2.2.1 Terminal connections 2.2.2 Description of input and output 2.3 Description of function of position indicator
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61010-T1
signo727
24VDC
115/230VAC
hengstler 890
hengstler 890 counter
727 Transistor power values
Hengstler relay 890
hengstler, 890
signo 727
pulse counter hengstler
Hengstler counter 890
bi colour led 230v
hengstler signo
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Untitled
Abstract: No abstract text available
Text: .O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLF147 VHP power MOS transistor PIN CONFIGURATION FEATURES • High power gain « Low intermodulation distortion • Easy power control • Good thermal stability
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BLF147
OT121
OT121B
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faulhaber BLD 5018
Abstract: minimotor SA 22 TRIMMING POTENTIOMETER 10k 10K preset potentiometer 10K potentiometer minimotor dc motor minimotor dc motor FAULHABER DC SERVO MOTOR CONTROL curcuit Faulhaber minimotor SA potentiometer 10k
Text: Servo Amplifier 2-Quadrant PWM for Brushless DC-Servomotors Series BLD 5018 Operating Instructions Index Chapter 1. Description page 2 2. Illustration 2 3. Specification 3 4. Dimensions and weight 3 5. 5.1 Safety notes Connection informations 4 4 6. Preparing
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MA15001,
faulhaber BLD 5018
minimotor SA 22
TRIMMING POTENTIOMETER 10k
10K preset potentiometer
10K potentiometer
minimotor dc motor
minimotor dc motor FAULHABER
DC SERVO MOTOR CONTROL curcuit
Faulhaber minimotor SA
potentiometer 10k
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AN105 infineon
Abstract: BCR450 BCR450U BCR401U LXML-PWC1-0040 BCR402u boost bcr401 BCR402R hg lamp ballast LED lights manufacturing technology
Text: A pp li c at io n N o t e, R e v . 1. 0 , N ov e m be r 2 00 8 A p p li c a t i o n N o t e N o . 1 5 9 L o w - C o s t, L i n e a r M o de , 7 1 % E f f i c i e n c y 38 0 m A L E D D r i v e r D em o u s i n g t h e B C R 4 0 1 R , B C X 6 8 & LUXEON Rebel LEDs
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COMP2006.
AN105,
BCR401R,
BCR402R,
BCR401W,
BCR402W,
BCR401U,
BCR402U,
BCR405U,
BCR450,
AN105 infineon
BCR450
BCR450U
BCR401U
LXML-PWC1-0040
BCR402u boost
bcr401
BCR402R
hg lamp ballast
LED lights manufacturing technology
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T 402 transistor
Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
Text: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte grated circuits consisting of vertical NPN and PNP
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ALA401/402
PR352A21
PR352A2
NR151A01
NR151
005002b
T 402 transistor
702 TRANSISTOR npn
transistor+1906
pnp 8 transistor array
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GSO 69
Abstract: No abstract text available
Text: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.
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BST110
DS3c17b
GSO 69
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies
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00147BH
BUZ54A
T-39-13
bbS3T31
0D1472T
bb53131
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BFW61
Abstract: No abstract text available
Text: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA
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BFW61
btj53T31
357T2
BFW61
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BFW61
Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
Text: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.
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BFW61
200/iA
BFW61
FET BFW61
N CHANNEL FET BFW61
transistor TO-72
727 Transistor power values
VDS-15
ad357
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727 Transistor power values
Abstract: transistor 3bt marking FR PNP SOT323 3BT MARKING bc857cw 3Mt transistor BC856BW
Text: Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W; BC858W FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 80) 1 • S-mini package. 2 emitter 3 collector base APPLICATIONS • General purpose switching and amplification.
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BC856W;
BC857W;
BC858W
OT323
BC846W,
BC847W
BC848W.
BC856W
BC856AW
BC856BW
727 Transistor power values
transistor 3bt
marking FR PNP SOT323
3BT MARKING
bc857cw
3Mt transistor
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727 Transistor power values
Abstract: BST110 transistor wz
Text: • bbSB^ai OGSa'iTM fi'îO « A P X N AMER PHILIPS/DISCRETE BST110 b?E T> P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.
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BST110
200mA
TZ22045
727 Transistor power values
BST110
transistor wz
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diode U3d
Abstract: diode marking code 777 diode U3d on PL360D u3d diode Transil diodes diode MARKING CODE U3D
Text: Æ T SGS-THOMSON ì* [ S & [ i ¥ [e m d PL360D (§ ì TRANSIL FEATURES • ■ . ■ > PEAK PULSE POWER= 300 W <§> 1ms. BREAKDOWN VOLTAGE = 330 V min. UNIDIRECTIONAL TRANS IL. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR . DESCRIPTION
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PL360D
PL360D
GG4I173D
diode U3d
diode marking code 777
diode U3d on
u3d diode
Transil diodes
diode MARKING CODE U3D
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727 Transistor power values
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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K456-1000B
T0220AB
BUK456-1000B
727 Transistor power values
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BUW84
Abstract: transistor BUW84
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 PINNING DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT82 package. APPLICATIONS PIN DESCRIPTION 1 base 2 collector; connected to mounting base
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BUW84;
BUW85
BUW84
BUW85
transistor BUW84
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727 Transistor power values
Abstract: No abstract text available
Text: SIEMENS BCR191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in bias resistor (R1=22kß, R2=22kfl) Type BCR191S Marking Ordering Code Pin Configuration
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22kfl)
BCR191S
Q62702-C2418
OT-363
727 Transistor power values
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BLF542
Abstract: UBB776
Text: Philips Semiconductors 003010b HR M APX Product specification UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES b^E T> PIN CONFIGURATION • High power gain • Easy power control o • Gold metallization • Good thermal stability • Withstands full load mismatch
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GG3G10b
BLF542
OT171
PINNING-SOT171
MBA931
MRA733
BLF542
UBB776
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-elfect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK542-60A/B
BUK542
OT186
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE J> m bbSB'lBl DDEfiOT? ?Qb « A P X 2N2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope prim arily intended for high-speed saturated switching and high frequency am plifier applications. Q U IC K R E F E R E N C E D A T A
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2N2369A
7Z79604
7Z79606
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;
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bbS3R31
bbS3R31
Q02RltlR
7Z88750
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bt1 marking
Abstract: SOT89 transistor marking with lb 135
Text: Philips Semiconductors Product specification PNP high-voltage transistors BST15; BST16 FEATURES PINNING • Low current max. 200 mA PIN • High voltage (max. 300 V). 1 emitter 2 collector 3 base APPLICATIONS DESCRIPTION • General purpose switching and amplification.
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BST39
BST40.
BST15
BST16
BST15;
BST16
BST15
BST18
bt1 marking
SOT89 transistor marking with lb 135
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BST60
Abstract: BST50
Text: BST50 BST51 BST52 J V N-P-N SILICON PLANAR DARLINGTON TRANSISTORS Silicon n-p-n planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a m icrom iniature SOT-89 package. P-N-P complements are BST60, 6 1 ,6 2 respectively.
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BST50
BST51
BST52
OT-89
BST60,
BST60
BST50
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides
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BLW50F
E13S1
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Untitled
Abstract: No abstract text available
Text: r Z Z SGS-THOMSON ^ 7 # HmemBiHCTBIBBOOIBi BYW 100-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . HIGH SURGE CURRENT ■ THE SPECIFICATIONS AND CURVES EN
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