Untitled
Abstract: No abstract text available
Text: ECX-6164-25.000M TR RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6164 -25.000M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel
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ECX-6164-25
ECX-6164
000MHz
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Untitled
Abstract: No abstract text available
Text: ECX-6164-25.000M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6164 -25.000M Series Ecliptek Custom Crystal Nominal Frequency 25.000MHz ELECTRICAL SPECIFICATIONS
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ECX-6164-25
ECX-6164
000MHz
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transistor BU 102S
Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
Text: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China
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H1-O03EE0-1004015ND
transistor BU 102S
fgt313
stp 10n40
SLA4052
BU 102S
c4381
high voltage 3-phase motor driver ic
RELAY sz - 2103 12V
C5100 MOSFET
SLA5096
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SSC9512
Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Text: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China
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O03EH0
STR-X6768N
TMA256B-L
STR-X6769
TMB166S-L
STR-X6769B
TMB206S-L
STR-Y6453
VR-60SS
STR-Y6456
SSC9512
STR-W6750
B1560 equivalent
STRW6252
str3a100
sanken audio modules
24v dc soft start motor control diagram
DARLINGTON TRANSISTOR ARRAY
strw6053
inverter 12v to 220 ac mosfet based
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SD MOSFET DRIVE DATASHEET 4468 8 PIN
Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Text: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720
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O03CC0
Room3202,
H1-O03CC0-1008031NM
SD MOSFET DRIVE DATASHEET 4468 8 PIN
SK 18752
ctx12s
fgt313
18752 SANKEN
sla6805m
fn651
sla6101
SK 18751
str20012
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2114 Ram pinout 18
Abstract: MWS5114 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X
Text: MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
MWS5114
MWS5114-2
MWS5114-1
MWS5114-3
2114 Ram pinout 18
MWS5114-3
MWS5114D1
MWS5114D2
MWS5114D3
MWS5114D3X
MWS5114E1
MWS5114E2
MWS5114E2X
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VDR 20-100
Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
Text: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs
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MWS5114
1024-Word
200ns
250ns
300ns
MWS5114E3
MWS5114E2
MWS5114E2X
MWS5114E1
MWS5114D3
VDR 20-100
MWS5114
MWS5114D1
MWS5114D2
MWS5114D3
MWS5114D3X
MWS5114E1
MWS5114E2
MWS5114E2X
MWS5114E3
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2114 Ram pinout 18
Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Text: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
MWS5114
2114 Ram pinout 18
9114 RAM
2114 static ram
2114 static ram ic
ic 2114
MWS5114E3
9114 static ram
MWS5114-3
2114 4 bit Ram pinout
2114 ram
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Untitled
Abstract: No abstract text available
Text: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 MEG X 4 X 4 BANKS MT46V16M8 – 4 MEG X 8 X 4 BANKS MT46V8M16 – 2 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets
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128Mb:
09005aef8074a655
128MBDDRx4x8x16
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Untitled
Abstract: No abstract text available
Text: 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V128M4 – 32 MEG X 4 X 4 BANKS MT46V64M8 – 16 MEG X 8 X 4 BANKS MT46V32M16 – 8 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets
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512Mb:
DDR400)
09005aef80a1d9e7
512MBDDRx4x8x16
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Untitled
Abstract: No abstract text available
Text: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 MEG x 4 x 4 BANKS MT46V16M8 – 4 MEG x 8 x 4 BANKS MT46V8M16 – 2 MEG x 16 x 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets
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128Mb:
MT46V32M4
MT46V16M8
MT46V8M16
66-pin
09005aef8074a655
128MBDDRx4x8x16
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DDR400
Abstract: MT46V128M4 MT46V32M16 MT46V64M8
Text: 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V128M4 – 32 MEG X 4 X 4 BANKS MT46V64M8 – 16 MEG X 8 X 4 BANKS MT46V32M16 – 8 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets
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512Mb:
MT46V128M4
MT46V64M8
MT46V32M16
66-pin
DDR400)
09005aef80a1d9e7
512MBDDRx4x8x16
DDR400
MT46V128M4
MT46V32M16
MT46V64M8
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Untitled
Abstract: No abstract text available
Text: UPD75P036GC-AB8 1/3 IL08 * C-MOS 4-BIT SINGLE CHIP MICROCOMPUTER WITH ONE TIME PROM AGND 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 -TOP VIEW- 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 GND AV DD (+2.7 to +6.0V)
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UPD75P036GC-AB8
P33/MD3
P32/MD2
P31/MD1
P30/MD0
SB1/SI/P03
SB0/SO/P02
SCK/P01
INT4/P00
BUZ/P23
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Untitled
Abstract: No abstract text available
Text: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 MEG x 4 x 4 BANKS MT46V16M8 – 4 MEG x 8 x 4 BANKS MT46V8M16 – 2 MEG x 16 x 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets
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09005aef8074a655
128MBDDRx4x8x16
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Untitled
Abstract: No abstract text available
Text: UPD75048GC-508-AB8 1/3 IL08 * C-MOS 4-BIT SINGLE CHIP MICROCOMPUTER WITH MASK ROM AND EEPROM AGND 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 -TOP VIEW- 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 GND
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UPD75048GC-508-AB8
SB1/SI/P03
SB0/SO/P02
SCK/P01
INT4/P00
BUZ/P23
PCL/P22
PPO/P21
P00-P03
P110-P113
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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4464 ram
Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Text: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT AC H I ID T M ITS U BISHI M OT O R O LA N AT IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH IB A N M O S,
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8816H
4464 ram
us4k
74C930
6116 ram 2k
74c920
6508 ram
4464 memory
6164 memory
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Untitled
Abstract: No abstract text available
Text: MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple mentary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
S5114
S5114-2
MWS5114-1
S5114-3
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memory ic 2114
Abstract: 5114E
Text: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple mentary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
S5114
S5114-3
S5114-2
S5114-1
memory ic 2114
5114E
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Untitled
Abstract: No abstract text available
Text: H D 4 4 6 7 8 4-Bit Single Chip Micro computer D escription The HD404678 is a 4-bit single-chip HMCS400-series microcom puter for telephone applications which is designed to increase program productivity and incorporates a high-precision dual tone multi-frequency DTMF receiver that is especially suitable for an
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HD404678
HMCS400-series
HD404678
FP-64A)
FP-64A
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Untitled
Abstract: No abstract text available
Text: HM-65162/883 & W A « 2K x 8 Asynchronous CMOS St3tÌC RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random
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HM-65162/883
Mil-Std-883
HM-65162/883
MIL-M38510
MIL-STD-1835,
GDIP1-T24
CQCC1-N32
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hm 6164
Abstract: 65162 hm165162 harris HM1-65162 equivalent
Text: 33 HM-65162/883 2K x 8 Asynchronous CM OS S tatic RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random
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HM-65162/883
MIL-M38510
MIL-STD-1835,
GD1P1-T24
CQCC1-N32
hm 6164
65162
hm165162 harris
HM1-65162 equivalent
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404678H
Abstract: No abstract text available
Text: HD404678 Series 4-Bit Single-Chip Microcomputer Built-in DTMF Receiver Description The H D 404678 Series is a 4-bit single-chip H M CS400 series microcomputer for telephone applications designed to increase program produc tivity. It features a high-precision dual-tone m ulti
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HD404678
CS400
mass/R83
N/R82
OD2/R73
OB/R70
03Ul4
03l\3-
404678H
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d424100
Abstract: 83IH-5695B
Text: f/PD424100 4,194,304 X 1-Bit Dynamic CMOS RAM W Mid W NEC Electronics Inc. D escription Pin C o n fig uratio n s T h e ¡j P D424100 is a fast-page dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced polycide
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uPD424100
D424100
JJPD424100
fiPD424100
83IH-5695B
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