Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    6116 STATIC RAM Search Results

    6116 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    6116LA55TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA55DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116LA35DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA20SOG Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, SOIC31/Tube Visit Renesas Electronics Corporation
    6116LA35TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation

    6116 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


    Original     		PDF 2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128

    verilog for SRAM 512k word 16bit

    Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
    Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18


    Original     		PDF 7C148 7C149 7C150 7C167A 7C168A 7C128A 7C187 7C164 7C166 7C185 verilog for SRAM 512k word 16bit CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip

    Triton P54C

    Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
    Text: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195


    Original     		PDF 7C147 7C123 7C148 7C149 7C150 7C122 7C167A 7C168A 7C128A 7C187 Triton P54C cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide

    2M X 32 Bits 72-Pin Flash SO-DIMM

    Abstract: AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037
    Text: GO TO WEB MAIN INDEX 3URGXFW 6HOHFWRU *XLGH Static RAMs Organization/Density Overview Density X1 X4 X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 4 Kb 16 Kb 7C167A 7C168A 7C128A 6116 64 Kb to 72 Kb 7C187 7C164 7C166 7C185 6264 7C182 256 Kb to 288 Kb 7C197 7C194


    Original     		PDF 7C148 7C149 7C150 7C167A 7C168A 7C128A 7C187 7C164 7C166 7C185 2M X 32 Bits 72-Pin Flash SO-DIMM AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037

    SR06

    Abstract: V3089 6116LA25 DSC-3089/06
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, IDT6116SA IDT6116LA SR06 V3089 6116LA25 DSC-3089/06

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116

    IDT6116LA

    Abstract: IDT6116SA SO24-2
    Text: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)


    Original     		PDF IDT6116SA IDT6116LA 20/25/35/45/55/70/90/120/150ns 20/25/35/45ns 15/20/25/35/45ns 24-pin MIL-STD-833, IDT6116LA IDT6116SA SO24-2

    STATIC RAM 6264

    Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
    Text: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)


    OCR Scan     		PDF 6116/SIS 6116H 45/55/70ns 6116H) 100/120/150ns 250mW STATIC RAM 6264 RAM 6264 6264 EPROM 6116 RAM 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns

    6116 RAM

    Abstract: ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L
    Text: MHS lllll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM MAY 1986 Features • MILITARY/INDUSTRIAL : FAST ACCESS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SUPPLY CURRENT : 60 mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


    OCR Scan     		PDF 6116/6116L 6116 RAM ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L

    Untitled

    Abstract: No abstract text available
    Text: § 5 -= MHS IlM ll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CM OS STATIC RAM C k V rsx Features • MILITARY/INDUSTRIAL : FAST A C C E SS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SU PPLY CURRENT : SO mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


    OCR Scan     		PDF 6116L 6116/6116L

    EL6116

    Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
    Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048


    OCR Scan     		PDF L6116 L6116) L6116-L) L6116 L6116-L MIL-STD-883, IDT6116, CY7C128/CY6116 24-pin EL6116 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25

    CY6116-35

    Abstract: 6116 RAM expansion circuit
    Text: CY6116 CYPRESS SEMICONDUCTOR " 2,048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected The C Y 6116 is a high-perform ance CM O S Static RAM organized as 2048 w ords by 8 bits. Easy m em ory expansion is provided by


    OCR Scan     		PDF CY6116 CY6116-35 6116 RAM expansion circuit

    chip diagram of ram chip 6116

    Abstract: ci 6116 RAM 6116
    Text: SGS-THOMSON KLH Tr[^© iìOa©S M K 6116 MK6116, MKI6116, MK6116L, MKI6116L (N/S - 15/20/25 2 K X 8 CMOS STATIC RAM • BYTEWYDE 2K x 8 CMOS STATIC RAM. .« lili ■ +5 VOLT ONLY WRITE/READ. ■ HIGH PERFORMANCE WITH LOW CMOS STANDBY POWER. PIN NAMES


    OCR Scan     		PDF MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, chip diagram of ram chip 6116 ci 6116 RAM 6116

    RAM MK6116

    Abstract: MK6116-15 6116 ram 2k MK6116-25 DIP-24 MK6116 FZJ 105
    Text: SGS-THOMSON M K 6116 M MK6116, MKI6116, MK6116L, MKI6116L N/S - 15/20/25 2 K X 8 C M O S STATIC RAM i BYTEWYDE 2K x 8 CM OS STATIC RAM. £.j U i +5 VOLT ONLY WRITE/READ. i 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC. i EQUAL W RITE AND READ CYCLE TIMES.


    OCR Scan     		PDF MK6116 MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, RAM MK6116 MK6116-15 6116 ram 2k MK6116-25 DIP-24 FZJ 105

    ES 61162

    Abstract: No abstract text available
    Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C


    OCR Scan     		PDF Sflbfl45b HM6116/Rev ES 61162

    Untitled

    Abstract: No abstract text available
    Text: March 1994 HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES . . ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY .120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY: 2.0 (xW (TYP) DATA RETENTION : 4 (TYP)


    OCR Scan     		PDF 6116/Rev

    6116 block diagram

    Abstract: No abstract text available
    Text: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C


    OCR Scan     		PDF F12-H F0F11 6116 block diagram

    6116 RAM

    Abstract: 6116 6116 static ram SRAM 6116 ram 6116 6116 memory HM6116 6116 sram 6116 CMOS RAM decoder 6116
    Text: Illiïü HM 6116 DATA SHEET_ 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY : 120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY : 2.0 nW (TYP) DATA RETENTION : 4 fiW (TYP)


    OCR Scan     		PDF 6116/Rev 6116 RAM 6116 6116 static ram SRAM 6116 ram 6116 6116 memory HM6116 6116 sram 6116 CMOS RAM decoder 6116

    6116 RAM

    Abstract: SRAM 6116 6116 6116 memory chip diagram of ram chip 6116 6116 memory chip 6116 SRAM HM6116 ram 6116 6ll6
    Text: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C


    OCR Scan     		PDF 6116/Rev 6116 RAM SRAM 6116 6116 6116 memory chip diagram of ram chip 6116 6116 memory chip 6116 SRAM HM6116 ram 6116 6ll6

    2048x8 RAM

    Abstract: 6216 static ram
    Text: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec


    OCR Scan     		PDF 2048x8 S10307FDS 110ns MA6116) MA6216) 5x10s 5x1010 100pA ma6H6/6216 2048x8 RAM 6216 static ram

    hm6116l -70

    Abstract: 6116 RAM chip diagram of ram chip 6116 6116 6116 CMOS RAM memory 6116 SRAM 6116 6116 RAM expansion circuit HM 6116 RAM 6116 static RAM chip
    Text: _ MTE D li 5 fifc>fl45 b 0 D Q 1 3 1 Ô Q37 • i l M H S T tj^ - z .3 - /^ MATRA M H S ifllll I V r i H September 1990 HM 6116 DATA SHEET_ 2 kx 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESSS TIME MILITARY : 120 ns max


    OCR Scan     		PDF DG0131Ã hm6116l -70 6116 RAM chip diagram of ram chip 6116 6116 6116 CMOS RAM memory 6116 SRAM 6116 6116 RAM expansion circuit HM 6116 RAM 6116 static RAM chip

    HY6116-10

    Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
    Text: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high


    OCR Scan     		PDF t-46-23-12 HY6116 2048-word HY6116-10 HY6116-12 HY6116-15 HY6116 100ns 120ns 150ns HY6116-10 HY6116-12 HY6116-15 Hyundai Semiconductor

    HM6116P-3

    Abstract: HM6116LP HM6116LP-2 HM6116LP-3 hm6116p-4 ic 6116 HM6114FP-4 HM6116LP-3
    Text: Maintenance Only HM6116 Series 2048-word x 8-bit High Speed CMOS Static RAM HM6116P S erie s •FEA TURES • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and Low Power Operation Standby: 100/jW typ. 10/uW (typ.) (L-version) 120ns/150ns/200ns (max.)


    OCR Scan     		PDF HM6116 2048-word 120ns/150ns/200ns HM6116P 100/jW 10/uW 200mW 175mW P-141 HM6116P-2 HM6116P-3 HM6116LP HM6116LP-2 HM6116LP-3 hm6116p-4 ic 6116 HM6114FP-4 HM6116LP-3

    6116 RAM

    Abstract: 6116 static ram chip diagram of ram chip 6116 6116 CMOS RAM STATIC RAM "static ram 2k x 8" 6116 ram 2k 6116 static RAM chip ram 6116 G5116D-2
    Text: G5116 Microcircuits CMOS 2048 x 8 High Speed Static RAM Features General Description • L o w p o w e r C M O S te c h n o lo g y 15 m A S ta n d by 70 m A O p e ra tin g T h e GTE G 5 1 16 is a h ig h -s p e e d 204 8 -w ord by 8 -b it sta tic RAM w ith m a x im u m access tim e s of 90,120 o r 150 nan o se con d s.


    OCR Scan     		PDF G5116 G5116 2048-word G65SC00 G5116P-90 G5116D-90 16P-2 6116 RAM 6116 static ram chip diagram of ram chip 6116 6116 CMOS RAM STATIC RAM "static ram 2k x 8" 6116 ram 2k 6116 static RAM chip ram 6116 G5116D-2