V62C518256LL-70P
Abstract: basic stamp2 AN-051 DS1225 DS1230 T2400 8kx8 RAM AN052 32kx8 sram AN051
Text: RAMPack B Serial RAM Module *Byte/Block Addressing *Sequential Buffer Mode *Multiple Baud Rates *8K to 32K Bytes of RAM SOLUTIONS CUBED 3029-F Esplanade Chico, CA 95973 phone 530 891-8045 fax (530) 891-1643 www.solutions-cubed.com MINIATURE ENGINEERING MODULES
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3029-F
32Kx8
V62C518256LL-70P
basic stamp2
AN-051
DS1225
DS1230
T2400
8kx8 RAM
AN052
32kx8 sram
AN051
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pic tachometer circuit
Abstract: of pwm based bidirectional dc motor speed con AN253 maxim motor mind c basic stamp 2 Tachometer circuit 09C4H 5-30V A3952SLB AN-252
Text: Shown without heat sink Motor Mind B DC Motor Control Module *Adjust Speed/Direction *Easy Serial Interface *Tachometer/Counter Input SOLUTIONS CUBED 256 East 1st Street Chico, CA 95928 phone (530) 891-8045 fax (530) 891-1643 www.solutions-cubed.com MINIATURE ENGINEERING MODULES
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30Vdc
535Hz
pic tachometer circuit
of pwm based bidirectional dc motor speed con
AN253 maxim
motor mind c
basic stamp 2
Tachometer circuit
09C4H
5-30V
A3952SLB
AN-252
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PWR530
Abstract: No abstract text available
Text: User's Guide SLVU890 – April 2013 TPS54531EVM-530, 5-A Regulator Evaluation Module This user's guide contains information for the TPS54531EVM-530 evaluation module as well as for the TPS54531. Included are the performance specifications, schematic, and the bill of materials of the
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SLVU890
TPS54531EVM-530,
TPS54531EVM-530
TPS54531.
TPS54531EVM-530.
PWR530
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Solutions Cubed
Abstract: No abstract text available
Text: Shown without heat sink Motor Mind B DC Motor Control Module *Adjust Speed/Direction *Easy Serial Interface *Tachometer/Counter Input SOLUTIONS CUBED 3029-F Esplanade Chico, CA 95973 phone (530) 891-8045 fax (530) 891-1643 www.solutions-cubed.com MINIATURE ENGINEERING MODULES
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3029-F
30Vdc
535Hz
Solutions Cubed
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logitech x 530
Abstract: JU-226A273FC nokia 1200 lcd television lg ultra slim samsung colour tv kit circuit diagram nokia 1200 circuit diagram hp BIOS 2.6 nokia mobile phone 1600 circuit diagram tv lg ultra slim mouse genius diagram
Text: Acer TravelMate 530 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: VD.T24V5.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 530 service guide.
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T24V5
logitech x 530
JU-226A273FC
nokia 1200 lcd
television lg ultra slim
samsung colour tv kit circuit diagram
nokia 1200 circuit diagram
hp BIOS 2.6
nokia mobile phone 1600 circuit diagram
tv lg ultra slim
mouse genius diagram
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"7 segment display" 3102
Abstract: No abstract text available
Text: Temperature measurement with current output and PNP/NPN transistor switching output output 2 reprogrammable as switching output TS-530-LI2UPN8X-H1141-L016 • ■ ■ ■ Rotatable after mounting the process connection Reading of adjusted values without tools
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TS-530-LI2UPN8X-H1141-L016
Pt-100
2013-07-13T18
D-45472
"7 segment display" 3102
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Untitled
Abstract: No abstract text available
Text: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm Low ON-resistance: Ron = 530 m max (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) 2.1±0.1 1.7±0.1 Drain-source voltage Rating Unit
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SSM3K106TU
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Abstract: No abstract text available
Text: EPC8002 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 65 V • RDS on , 530 mΩ • ID, 2 A • Optimized eGaN FET for high frequency applications • Pb-Free (RoHS Compliant), Halogen Free EPC8002 eGaN FETs are supplied only in
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EPC8002
EPC8002
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Untitled
Abstract: No abstract text available
Text: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm 2.1±0.1 Low ON-resistance: 1.7±0.1 Ron = 530 mΩ max (@VGS = 4 V) Ron = 310 mΩ (max) (@VGS = 10 V) Lead (Pb)-free 2.0±0.1 •
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SSM3K106TU
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SSM3K106TU
Abstract: No abstract text available
Text: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm 2.1±0.1 • Lead Pb -free 1.7±0.1 Ron = 530 mΩ (max) (@VGS = 4 V) 2.0±0.1 Ron = 310 mΩ (max) (@VGS = 10 V) Characteristic Drain-source voltage
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SSM3K106TU
SSM3K106TU
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SSM3K106TU
Abstract: No abstract text available
Text: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: 2.1±0.1 Ron = 530 mΩ max (@VGS = 4 V) 1.7±0.1 Unit VDS 20 V V VGSS ± 20 DC ID 1.2 Pulse
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SSM3K106TU
SSM3K106TU
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SSM3K106TU
Abstract: No abstract text available
Text: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: 2.1±0.1 Ron = 530 mΩ max (@VGS = 4 V) 1.7±0.1 Unit VDS 20 V V VGSS ± 20 DC ID 1.2 Pulse
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SSM3K106TU
SSM3K106TU
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Untitled
Abstract: No abstract text available
Text: FQB11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
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FQB11N40C
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Untitled
Abstract: No abstract text available
Text: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: 2.1±0.1 Ron = 530 mΩ max (@VGS = 4 V) 1.7±0.1 Rating Unit VDS 20 V V VGSS ± 20 DC ID 1.2
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SSM3K106TU
31mitation,
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Abstract: No abstract text available
Text: MCP6491 7.5 MHz, Low-Input Bias Current Op Amps Features Description • Low Input Bias Current - 150 pA typical, TA = +125°C • Low Quiescent Current - 530 µA/amplifier (typical) • Low Input Offset Voltage - ±1.5 mV (maximum) • Supply Voltage Range: 2.4V to 5.5V
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MCP6491
SC70-5,
OT-23-5
MCP6491
DS22321B-page
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Untitled
Abstract: No abstract text available
Text: £ j ï SGS-THOMSON ULKgraMOeS IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E IR F 530 IR F 530 F I • . . . . . . V dss RDS on Id 100 V 100 V < 0 .1 6 ß < 0 .1 6 ß 16 A 10 A TYPICAL R D S (on) = 0.095 £2 AVALANCHE RUGGED TECHNOLOGY
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IRF530
IRF530FI
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201
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2SK1530
2SJ201
2SK1530·
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2SK1530
Abstract: 2SJ201
Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SJ201
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2SK1530
2SJ201
2SK1530
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74149
Abstract: TFK 19 001 TBA520 colour television block diagram tfk 332 aj60 TFK 108 TFK diodes application Y178
Text: TBA 530 'W Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendung: RGB-Matrix und -Vorverstärker für PAL-Farbfernsehempfänger Application: RGB matrix and pre-amplifier for PAL colour television receivers Besondere Merkmale: Features:
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH PO W ER AM PLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201
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2SK1530
2SJ201
2SK1530â
Tc-25Â
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors k b S 3 T 3 1 Q 031535 530 • A P X ^Pfoductspecification PNP 4 GHz wideband transistor BFQ32C N AUER PHILIPS/DISCRETE DESCRIPTION blE » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes. It is
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BFQ32C
OT173
BFP96.
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A720 transistor
Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
Text: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.
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2N3906
MIL-S-19500/530
MIL-S-19500.
MIL-S-19500
5961-A720)
A720 transistor
transistor A720
4392 ic equivalent
2N3906
350MW
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sot62
Abstract: BUW14
Text: N AUER PHILIPS/DISCRETE bTE T> m bbSBTBl 0 C]E05b 3 =530 • APX P hilips S em roduct sp e cifica tio n Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
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DQE65b3
BUW14
sot62
BUW14
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Untitled
Abstract: No abstract text available
Text: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.)
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2SK1530
2SJ201
2-21F1B
O-220SM
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