PM61300
Abstract: PM1008S BOURNS JW MILLER 9230-94-RC AXIAL INDUCTOR 2100LL FB43-110 5731 IC0730 smd H series transistors transistor 5609 SFR3216
Text: INDUCTIVE COMPONENTS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers March 2007 UPDATE - Bourns Inductors Replacing JW Miller Models The current summary of Bourns® inductor models that will be replacing JW Miller models is attached.
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FB2000xx
FB43-110
FB43-226
FB43-422
FB73-422
RL110
RL110S
RL181S
RL187
RL262
PM61300
PM1008S
BOURNS JW MILLER 9230-94-RC AXIAL INDUCTOR
2100LL
FB43-110
5731
IC0730
smd H series transistors
transistor 5609
SFR3216
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42-PIN
Abstract: 44-PIN
Text: LH53B8500 CMOS 8M 1M x 8 / 512K × 16 Mask-Programmable ROM With Page Mode FEATURES • 1,048,576 words × 8 bit organization (Byte mode) 524,288 words × 16 bit organization (Word mode) PIN CONNECTIONS 42-PIN DIP TOP VIEW A18 1 42 A17 2 41 A8 • Access time: 150 ns (MAX.)
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LH53B8500
42-PIN
42-pin,
600-mil
44SOP
44-pin,
44-PIN
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PM1008S
Abstract: PM61300 z326 IC0730 PM104 PM105 PM125SH 2101-V PM334 5609 5610
Text: Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers March 2007 UPDATE - Bourns Inductors Replacing JW Miller Models The current summary of Bourns® inductor models that will be replacing JW Miller models is attached.
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FB2000xx
FB43-110
FB43-226
FB43-422
FB73-422
RL110
RL110S
RL181S
RL187
RL262
PM1008S
PM61300
z326
IC0730
PM104
PM105
PM125SH
2101-V
PM334
5609 5610
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IL5233G
Abstract: IL5212G Capacitor10 IIL5200G IL52XXG 5218 chip ic IL5200G A3201
Text: IL52XXG IL52XXG FAMILY OF LOW DROP VOLTAGE REGULATORS OF POSITIVE POLARITY 7 FIXED AND 1 ADJUSTABLE IIL5200G - adjustable voltage regulator of positive polarity IL5212G, IL5218G, IL5225G, IL5228G, IL5230G, IL5233G, IL5250G - fixed voltage regulators of positive polarity
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IL52XXG
IL52XXG
IIL5200G
IL5212G,
IL5218G,
IL5225G,
IL5228G,
IL5230G,
IL5233G,
IL5250G
IL5233G
IL5212G
Capacitor10
5218 chip ic
IL5200G
A3201
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ccd board ir cut filter driver
Abstract: CCD-Sensor ccd driver board fujinon lens system LC9948G "CCD SENSORS" Lens Driver IC for iris IMAGE SENSOR, Low power camera block diagram Nippon capacitors
Text: Ordering number : EN*5218 CMOS LSI LC9948G 1/5" Optical Size CCIR B/W Solid-State Image Sensor Preliminary Overview Package Dimensions The LC9948G is a 1/5" optical size frame transfer type CCD charge-coupled device solid-state image sensor developed for use in B/W video cameras.
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LC9948G
LC9948G
LC9948G]
20-pin
ccd board ir cut filter driver
CCD-Sensor
ccd driver board
fujinon lens system
"CCD SENSORS"
Lens Driver IC for iris
IMAGE SENSOR, Low power
camera block diagram
Nippon capacitors
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A12L
Abstract: A13L CY7C09159 CY7C09169 AN 5218
Text: fax id: 5218 51 CY7C09159 CY7C09169 PRELIMINARY 8K/16K x 9 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 2 Flow-Through/Pipelined devices — 8K x 9 organization CY7C09159
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CY7C09159
CY7C09169
8K/16K
CY7C09159)
CY7C09169)
100-MHz
35-micron
A12L
A13L
CY7C09159
CY7C09169
AN 5218
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5218 chip ic
Abstract: 53S881F
Text: ADV M IC R O 14‘ E D I MEMORY 0257555 0027871 a 2 5 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS T APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable tltanlum-tungsten fuses TiW guaran
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53/63S881/A
1024x8
30-ns
24-pin
600-mil
53/63S881
53/63S881A
30pFA
5218 chip ic
53S881F
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53S881
Abstract: 53S881A 63S881 63S881A 1024x8 PROM MEQ1 e2723
Text: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Reliable titanium-iungsten fuses TIW guaran tee greater than 98% programming yields • Low voltage generic programming
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53/63S881/A
1024x8
30-ns
24-pln
600-mil
53/63S881
53/63S881A
53S881
53S881A
63S881
63S881A
1024x8 PROM
MEQ1
e2723
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sim 5218
Abstract: No abstract text available
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M C54/74HC241A Advance Inform ation O c ta l 3 -S ta te N o n in v e rtin g B u ffer/Line D river/ Line R e ce ive r J SU FFIX C ER A M IC C A SE 732-03 N SU FFIX PLASTIC C A SE 738 03 High-Performance Silicon-Gate C M O S
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C54/74HC241A
LS241.
sim 5218
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Untitled
Abstract: No abstract text available
Text: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable titanium-tungsten fuses TIW guaran tee greater than 98% programming yields
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53/63S881/A
1024x8
30-ns
24-pln
600-mil
53/63S881
53/63S881A
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ic 5218 a
Abstract: 5218 chip ic
Text: Tem ic 7541/7542 MATRA MHS Single Rail Low Voltage 3.0 V CODEC Description 7541 n-law and 7542 (A - law) are CM OS devices containing a companding C O D EC And PCM voice filters on a single chip. The most featured point is to operate with a single power supply, which provides cost effective design
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03602B
Abstract: No abstract text available
Text: Am2924 Am2924 Three-Line to Eight-Line Decoder/Demultiplexer DISTINCTIVE CHARACTERISTICS • • Advanced Schottky technology Inverting and non-inverting enable inputs GENERAL DESCRIPTION The Am2924 is a 3-line to 8-line decoder/demultiplexer fabricated using advanced Schottky technology. The de
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Am2924
Am2924
BD002380
03602B
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Untitled
Abstract: No abstract text available
Text: Tem ic 7541/7542 MATRA MHS Single Rail Low Voltage 3.0 V CODEC Description 7541 n-law and 7542 (A - law) are CMOS devices containing a companding CODEC And PCM voice filters on a single chip. The most featured point is to operate with a single power supply, which provides cost effective design
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0DD2A44
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amd AM2 PIN LAYOUT
Abstract: No abstract text available
Text: Am2924 Am2924 Three-Line to Eight-Line Decoder/Demultiplexer DISTINCTIVE CHARACTERISTICS • Advanced Schottky technology • Inverting and non-inverting enable inputs GENERAL DESCRIPTION The Am2924 is a 3-line to 8-line decoder/demultiplexer fabricated using advanced Schottky technology- The de
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Am2924
Am2924
BD002360
03602B
amd AM2 PIN LAYOUT
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MICROWAVE ASSOCIATES
Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
Text: M/A-C'OM' SEMICONDUCTOR _ci3 DE |St.45E] M □□00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors % S t su* mi IP I i Description a The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate devices with a 1
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00L30
MA4F001
4701B
MA-4F001
MA-4F004
MA-4F600
MA-4F200
MA-4F300
MICROWAVE ASSOCIATES
pa 3029 b
Dielectric Resonator Oscillator DRO
high power FET transistor s-parameters
2.5 GHz RF power transistors with s-parameters
RF transistors with s-parameters
5218 chip ic
TIP 298
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da73
Abstract: D-A73
Text: CMOS 8M 1M x 8 / 512K x 16 Mask-Programmable ROM With Page Mode FEATURES • 1,048,576 words x 8 bit organization (Byte mode) 524,288 words x 16 bit organization (Word mode) PIN CONNECTIONS 42-PIN DIP TO P VIEW . A ie C • Addressable page: 4 words or 8 bytes
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42-pin,
600-mil
44-pin,
LH53B8500
600-mll
44SOP
OP044-P-0600)
da73
D-A73
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4233A
Abstract: 535x 184 324 DIODE 2N5383 2N3055C
Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8
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533XCD01
534XCD02
535XCQ01
2N1063
2N107Û
4233A
535x
184 324 DIODE
2N5383
2N3055C
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MICROWAVE ASSOCIATES
Abstract: 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600
Text: n/A-COn ADVANCED Sfl DE J S b 4 E l f l 3 □□□□017 T jp D J- 3t~Z? MfoCCA MA4F001 Series Gallium Arsenide Field Effect Transistors Description The MA4F001 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of low power Schottky barrier gate devices with a 1
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MA4F001
4701B
MA-4F001
MA-4F004
MA-4F600
MA-4F200
MA-4F300
MICROWAVE ASSOCIATES
2.5 GHz RF power transistors with s-parameters
RF transistors with s-parameters
TIP 298
MA4F600
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FET transistors with s-parameters
Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
Text: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X
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000Db25
MA4F004
4701B
MA-4F001
MA-4F004
MA-4F600
MA-4F200
MA-4F300
FET transistors with s-parameters
MICROWAVE ASSOCIATES
MA4F600
f TIP 122 transistor
MA4F004-918
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MA4F004
Abstract: No abstract text available
Text: Vv M/A-COM ADVANCED DE |st,4aifl3 ODDDDCH □ | ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X
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MA4F004
Number4701B
MA-4F001
MA-4F004
MA-4F600
MA-4F200
MA-4F300
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CASE-751
Abstract: 5218 8 PIN Case751B
Text: MOTOROLA SC { L O G I C * OS D b3L.72SS OOflOEflS ñ MOTOROLA T - SEMICONDUCTOR TECHNICAL DATA MC54/74HC195 4-B it Universal S hift Register High-Performance Silicon-Gate CMOS J SUFFIX CERAMIC C A S E 620*09 The MC54/74HC195 is identical in pinout to the LS195. The device inputs are
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MC54/74HC195
LS195.
MC54/74HC195
CASE-751
5218 8 PIN
Case751B
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Nippon capacitors
Abstract: No abstract text available
Text: Ordering number: EN%521B No. LC9948G 5218 1/5” Optical Size CCIR B/W Solid-State Image Sensor Preliminary Overview Package Dimensions The LC9948G is a 1/5" optical size frame transfer type CCD charge-coupled device solid-state image sensor developed for use in B/W video cameras.
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LC9948G
20-pin
Nippon capacitors
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PTC XK
Abstract: No abstract text available
Text: fax id: 5218 :/ CYPRESS CY7C09159 CY7C09169 8K/16K x 9 Synchronous Dual-Port Static RAM • High-speed clock to data access 6.5/7.5/12 ns max. • Low operating power Features • True Dual-Ported m em ory cells which allow simu Itaneous access of the same memory location
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CY7C09159)
CY7C09169)
100-MHz
35-micron
CY7C09159
CY7C09169
8K/16K
PTC XK
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC195 4-B it Universal Shift Register High-Performance Silicon-Gate CM O S J SUFFIX CERAMIC CASE 620-09 T he M C 54/74H C 19 5 is identical in p in o u t to the LS195. The device in p u ts are c o m p a t.b le w ith standard C M O S o u tp u ts , w ith pull up resistors, they are c o m p a tib le
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MC54/74HC195
54/74H
LS195.
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