74S471
Abstract: mmi 6331 74S287 MMI 6330 74s188 programming AMD 27S21 MMI 6309 6306 MMI 74S188 74S288 PROGRAMMING
Text: V1.6 Jan 13,1999 Fujitsu -7051 7052 7053 7057 7111 32x8 7112 32x8 7113 256x4 7114 256x4 7115 512x4 7116 512x4 7117 256x8 7118 256x8 7121 1kx4 7122 1kx4 7123 512x8 7124 512x8 7126 7127 7128 2kx4 7131 7132 1kx8 7134 4kx4 7137 2kx8 7138 2kx8 7142 4kx8 7144 8kx8
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256x4
512x4
256x8
512x8
7647R
82s23
74S471
mmi 6331
74S287
MMI 6330
74s188 programming
AMD 27S21
MMI 6309
6306 MMI
74S188
74S288 PROGRAMMING
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82s141
Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max
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512x8)
82S141
82S141
500ns
82S141/BKA
mux 8 to 1 timing
8 bit ttl mux
8 INPUT 4 OUTPUT MUX
GDFP2-F24
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82S147B
Abstract: F0180 mux 8 to 1 timing
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding
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512x8)
82S147B
82S147B
500ns
F0180
mux 8 to 1 timing
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82S147
Abstract: 8 bit ttl mux mux 8 to 1 timing mux 8/3 82S147A 4k prom
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S147 82S147A 4K-bit TTL bipolar PROM 512x8 FEATURES DESCRIPTION • Address access time: 75ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding
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82S147
82S147A
512x8)
82S147
82S147A
500ns
8 bit ttl mux
mux 8 to 1 timing
mux 8/3
4k prom
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Monolithic Memories
Abstract: S485A 512x8 53S485 63S485 63S841
Text: High Performance 512x8 PROM TiW PROM Fam ily 5 3 /6 3 S 4 8 5 Features/Benefits Description • Upward pinout-compatible with higher density PROMs The 53S485 and 63S485 are 512x8 bipolar PROMs featuring low current PNP inputs, full Schottky clam ping, and three-state
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53/63S485
512x8
45-ns
24-pin
53S485
63S485
53/63S841
53/63S841A
Monolithic Memories
S485A
63S841
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Monolithic Memories PROM programming
Abstract: 512X8 53S485 63S485 generic prom programming
Text: High Perform ance 512x8 PROM TiW PROM Fam ily 5 3 /6 3 S 4 8 5 CSS485 Features/ Benefits Description • Upward pinout-compatible with higher density PROMs The 53S485 and 63S485 are 512x8 bipolar PRO M s featuring low current PNP inputs, full Schottky clamping, and three-state
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512x8
CSS485
45-ns
24-pin
53S485
63S485
Monolithic Memories PROM programming
generic prom programming
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Untitled
Abstract: No abstract text available
Text: High Performance 512x8 PROM TiW PROM Family 5 3 /6 3 S 4 8 5 £ 3-HSS Features/ Benefits Description • U pward pinout-com patible with higher density PROMs The 53S485 and 63S485 are 512x8 bipolar PROMs featuring low current PNP inputs, full Schottky clamping, and three-state
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512x8
53S485
63S485
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63S481
Abstract: 53S481A 53S481
Text: High Performance 512x8 PROM TiW PROM Family 53/63S480 53/63S481 53/63S481A Features/ Benefits Description • 30 ns maximum access time The 53/63S480 and 53/63S481/A are 512x8 bipolar PROMs featuring low input current PNP inputs, full Schottky clamping, and open collector or three-state outputs. The titanium-tungsten
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512x8
53/63S480
53/63S481
53/63S481A
53/63S481/A
63S481
53S481A
53S481
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63RA481
Abstract: 53RA481 53RA481A 63RA481A
Text: High Performance 512x8 Registered PROM 5 3 /6 3 R A 4 8 1 5 3 /6 3 R A 4 8 1 A Features/B enefits Description • Versatile synchronous and asynchronous enables The 53/63RA481 and 53/63RA481A are 512x8 Registered PROMs with on-chip “D” type registers, versatile output enable control
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512x8
53/63RA481
53/63RA481A
24-pin
53/63RA481A
63RA481
53RA481
53RA481A
63RA481A
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Untitled
Abstract: No abstract text available
Text: High Performance 512x8 Registered PROM 5 3 /6 3 R A 4 8 1 5 3 /6 3 R A 4 8 1 A ¿ s RA 4 ?/ Features/Benefits Description • Versatile synchronous and asynchronous enables The 53/63RA481 and 53/63RA481A are 512x8 Registered PROMs with on-chip "D" type registers, versatile output enable control
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512x8
53/63RA481
53/63RA481A
512x8
24-pin
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WE VQE 23 F
Abstract: WE VQE 11 E WE VQE 24 E X2804A X2804AM X2804AM-35 X2804AM-45
Text: ü 4K Military X2804AM n 512x8 Bit _ Electrically Erasable PROM_ FEATURES • Simple Byte Write Operation — No High Voltages Necessary —Single TTL Level WE Signal Modifies Data
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X2804AM
512x8
X2804A
MH-Std-883C
WE VQE 23 F
WE VQE 11 E
WE VQE 24 E
X2804AM-35
X2804AM-45
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Untitled
Abstract: No abstract text available
Text: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data
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X2804AM
512x8
X2804A
MilStd-B83C
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d00936
Abstract: No abstract text available
Text: Am27S27 Am27S27 4,096-Bit 512x8 Bipolar Registered PROM DISTINCTIVE CHARACTERISTICS • • • On-chip, edge-triggered registers — ideal for pipelined microprogrammed systems Versatile synchronous and asynchronous enables for simplified word expansion
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Am27S27
096-Bit
512x8)
d00936
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CD4022
Abstract: C04022
Text: Am27S27/27S27A Adva^ 4,096-Bit 512x8 Bipolar Registered PROM Devices DISTINCTIVE CHARACTERISTICS • • • On-chip, edge-triggered registers— ideal for pipelined microprogrammed systems Versatile synchronous and asynchronous enables for sim plified word expansion
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Am27S27/27S27A
096-Bit
512x8)
Am27S27
CD4022
C04022
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AM27S29A/BRA
Abstract: No abstract text available
Text: ADV MICRO IME 0 I 0257550 0007753 3 | MEMORY a Am27S29/Am27S29A/Am27S29SA Advanced Micro Devices 4,096-Bit 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses • High programming yield
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Am27S29/Am27S29A/Am27S29SA
096-Bit
512x8)
Am27S29
512-words
TC003442
TC003452
KS000010
AM27S29A/BRA
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x2864
Abstract: X2864A x2864b X24LC04D X24LC04DI X24LC04P X24LC04PI X24LC04S X24LC04SI
Text: im PRELIMINARY INFORMATION X24LC04 X24LC04I Commercial Industrial 4K 512x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 3 V -6 V Vcc Operation • Low Power CMOS — 2 mA Active Current Typical —60 ixA Standby Current Typical • Internally Organized as Two Pages
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X24LC04
X24LC04I
512x8
14-Pin
X24LC04,
X24LC04I
x2864
X2864A
x2864b
X24LC04D
X24LC04DI
X24LC04P
X24LC04PI
X24LC04S
X24LC04SI
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27S31
Abstract: No abstract text available
Text: Am27S31 /27S31A ««J 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide
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Am27S31
/27S31A
512x8)
Am27S31/27S31A
KS000010
Am27S31/27S31
27S31
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NCC 5551
Abstract: CI 555 data X20C04 X20C05 X20C16 IS555
Text: Advance Information X20C05 4K 512x8 High Speed AUTOSTORE NOVRAM_ FEATURES DESCRIPTION • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Store Operations — Retention: 100 Years Minimum • Power-on Recall
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X20C05
512x8
X20C16
51oltage
PGMT15
X20C05
NCC 5551
CI 555 data
X20C04
X20C16
IS555
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27S31A
Abstract: 27S31 AM27S31/BJA AM27S31 AM27S31A CD 024 512X8 AM27S31PC CFM024
Text: a Am27S31 /27S31A Mva c^ 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide
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Am27S31
/27S31A
512x8)
Am27S31/27S31
KS000010
/27S31A
27S31A
27S31
AM27S31/BJA
AM27S31A
CD 024
512X8
AM27S31PC
CFM024
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27s31
Abstract: No abstract text available
Text: a Am27S31 /27S31A Advanced Micro Devices 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide
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OCR Scan
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PDF
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Am27S31
/27S31A
512x8)
Am27S31/27S31
Am27S31/27S31A
27s31
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Untitled
Abstract: No abstract text available
Text: QSK 512x8 Bit X2404M Military 4K Electrically Erasable PROM TYPICAL FEATURES • Internally Organized as Two Pages —Each 256 x 8 • 2 Wire Serial Interface • Provides Bidirectional Data Transfer Protocol • Eight Byte Page Write Mode —Minimizes Total Write Time Per Byte
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512x8
X2404M
X2404
X2404
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AM27S29
Abstract: KS000010 AM27S29A AM27S29SA CERAMIC FLATPACK 20pin AM27S29PC am27s29bra
Text: M^ 0 Am27S29/Am27S29A/Am27S29SA 4,096-Bit 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-cotlector and three-state outputs
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Am27S29/Am27S29A/Am27S29SA
096-Bit
512x8)
Am27S29
512-words
KS000010
KS000010
AM27S29A
AM27S29SA
CERAMIC FLATPACK 20pin
AM27S29PC
am27s29bra
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AM27S29
Abstract: 512x8 PROM AM27S29/BRA AM27S29A AM27S29SA AMD PROM Selector guide
Text: a Am27S29/Am27S29A/Am27S29SA Adva^ 4,096-Bit 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-last programming Platinum-Silicide fuses • High programming yield • Low-current PNP inputs • High-current open-collector and three-state outputs
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Am27S29/Am27S29A/Am27S29SA
096-Bit
512x8)
Am27S29
512-words
TC003452
WF021240
512x8 PROM
AM27S29/BRA
AM27S29A
AM27S29SA
AMD PROM Selector guide
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Untitled
Abstract: No abstract text available
Text: Am27S25/27S25A/27S25SA arf E l Advanced Micro Devices 4096-Bit 512x8 Bipolar Registered PROM with Preset and Clear Inputs DISTINCTIVE CHARACTERISTICS • • • • ’SA' version offers ultrafast AC performance {25 ns set up and 12 ns clock-to-output)
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Am27S25/27S25A/27S25SA
4096-Bit
512x8)
24-pin,
300-mil
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