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    Cornell Dubilier Electronics Inc CD19FD162GO3

    Mica Capacitors MICA 1600PF 500V 2%
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    Mouser Electronics CD19FD162GO3
    • 1 $6.18
    • 10 $4.81
    • 100 $4.12
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    Global Connector Technology BF040-16A-B2-0600-0260-0500-LD

    Board to Board & Mezzanine Connectors 16w, 2mm Pitch Pin Hdr, SIL, SMT, Vert, Type B2, GF, Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BF040-16A-B2-0600-0260-0500-LD
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    • 10000 $0.789
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    500 162 600 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PAN-TERM Fork Terminals LOCKING FORK TERMINALS Dimensions In. A W C G Std. Pkg. Qty. PN18-6LF-C Red .145 #6 .82 .27 .22 .63 100 500 1000 6000 PN18-6LFW-C Red .145 #6 .85 .29 .22 .64 100 500 1000 6000 Red .145 #8 .89 .29 .25 .68 100 500 1000 6000 Red .145


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    PDF PN18-6LF-C PN18-6LFW-C PN18-10LFN-C PN14-6LF-C PV18-8LF-C PV18-10LF-C PV14-6LFW-C PV14-8LF-C PV14-10LF-C PV14-10LFN-C

    Sensick P

    Abstract: No abstract text available
    Text: Photoelectric Proximity Switch WT 250, Background Suppression, Red Light – DC Scanning distance 10 . 600 mm Dimensional illustration 19.2 Photoelectric proximity switch 4 43 20 4.9 5 60 10 90° 18.8 WT 250-P 460 WT 250-N 162 WT 250-N 460 SENS. Max. 7 8


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    PDF 250-P 250-N black11) gray11) white11) Sensick P

    Untitled

    Abstract: No abstract text available
    Text: SY10E416 SY100E416 FINAL QUINT DIFFERENTIAL LINE RECEIVER DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain Internal 75KΩ input pull-down resistors


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    PDF SY10E416 SY100E416 600ps 10E/100E416 28-pin J28-1 SY10E416JCTR SY100E416JC

    semikron skmt E63 532

    Abstract: semikron skMt 132 /04 semikron skMt 132 SKMT132 semipack semikron skmt e63532 semikron skkt 132 SKND 162/12 semikron skMt 25
    Text: VRSM VRRM IFRMS maximum value for continuous operation 350 A V V IFAV (sin. 180; Tcase = 100 °C) 220 A 400 400 SKND 165/04 600 600 SKND 165/06 800 800 SKND 165/08 1200 1200 SKND 165/12 Symbol Conditions SKND 165 Units sin. 180; Tcase = 100 °C 220 A IFSM


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    PDF

    1N1542

    Abstract: 1n2238A
    Text: rectifiers 10 Part A 150°C PIV rnA 150°C 6 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 5 600 50 100 150 200 300 400 500 600 50 100 200 300 400 500 600 50 50 100 100 200 240 200 400 480 400 600 720 600 50 200 300 400 500 600 500


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    PDF 1N1348B, 1N1537 1N1538, 1N2232, 1N2232A, 1N2234, 1N2234A, 1N2236, N2236A, 1N2238, 1N1542 1n2238A

    Untitled

    Abstract: No abstract text available
    Text: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R • Glass passivated junction


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    PDF P6SMB300A P6SMB250CA SMB/DO-214AA EIA-RS-481) P6SMB250C

    semikron bridge rectifier sk 8 25 08

    Abstract: No abstract text available
    Text: se MIKRDN V rsm V rrm Ifrms maximum values for continuous operation 175 A | 250 A | 250 A V V Ifav (sin. 180; Tease — 100 A (85 °C) 160 A (95 °C) 500 400 SKKD 100/04 160 A (95 °C) 900 800 SKKD 100/08 SKKD 162/08 1300 1200 SKKD 100/12 SKKD 162/12 SKKE 162/12


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    PDF SKKD100 SKMD1001) SKKD162 SKND1621) fll3bb71 QQ04b77 semikron bridge rectifier sk 8 25 08

    PV22-10R-C

    Abstract: No abstract text available
    Text: R u ro u ir Electrical Group MULTIPLE STUD TERMINALS Dimensions In. A W C G Std. Pkg. Qty. #6, #8, #10 .95 .31 .25 .70 100 500 1000 6000 .162 #6, #8, #10 .95 .31 .25 .70 100 500 1000 6000 .225 #6, #8, #10 1.15 .37 .31 .87 50 500 500 CT-100Í CT-600:): 3000 CT-1550Í


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    PDF CT-100Í CT-600: CT-1550Í CT-1551Í PN10-610R-L PV22-2R-C 18-6R V18-10R PV18-14RX-C PV18-56RX-C PV22-10R-C

    Untitled

    Abstract: No abstract text available
    Text: - DO-35 Standard Zener Diodes 500 mW _ Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) * vF @ lF Pd (mA) max (V) (mA) (W) 1764 1.1 200 0.5 162 1701 1.1 200 0.5 1.0 151 1587 1.1 200 0.5 25 1.0 138 1443


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    PDF DO-35 u5-50

    hp 2503

    Abstract: KG41 KG252 Pole-120 kg64b KG100C
    Text: KG-Switches Technical Data KG 125 KG 160 KG250 KG315 KG10 KG20 KG32 KG10A KG20A KG32A KG41 KG64 KG80 KG100 KG126 KG161 KG251 KG316 KG10B KG20B KG32B KG41B KG64B KG80C KG100C KG127 KG 162 KG252 KG317 Selection Data V V V V 690 660 300 400 690 660 600 500 690


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    PDF KG250 KG315 KG10A KG20A KG32A KG100 KG126 KG161 KG251 KG316 hp 2503 KG41 KG252 Pole-120 kg64b KG100C

    1N52398

    Abstract: 1N52288 1n52348 317 on zener e4b diode 1587-1 1N5223B 1N5224B 1N5225B 1N5226B
    Text: - DO-35 Standard Zener Diodes 500 mW CPE Electrical Characteristics (At Ta=25°C, U nless Otherwise Specified) 1 * ZSM vF (mA) max (V) (mA) (W) 1764 1.1 200 0.5 162 1701 1.1 200 0.5 1.0 151 1587 1.1 200 0.5 25 1.0 138 1443 1.1 200


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    PDF DO-35 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B D0-35/D0-4T ui-50 1N52398 1N52288 1n52348 317 on zener e4b diode 1587-1

    thyristor t16

    Abstract: thyristor t16 400
    Text: se MIKRDN V rsm V rrm dv/ SEMIPACK 2 Thyristor / Diode Modules Itrms (maximum value for continuous operation V drm dt)cr 220 A 250 A 220 A 250 A V V/)iS 148 A 168 A 148 A 168 A SKKT SKKT SKKH SKKH 162/08 D Itav (sin. 180; Tcase = 80 °C) V 500 132/08 D


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    PDF KT162038 Q75fifi thyristor t16 thyristor t16 400

    110T

    Abstract: AC03DJM AC03DJM-Z AC03DSM AC03DSMA AC03FJM AC03FJM-Z AC03FSM AC03FSMA lf7a
    Text: 162 — — e A C 0 3 r D, F j J M , o n a t > t i£ NT-7 A C 0 3 r A C 0 3 r D, F j J M - Z 3A K fó , .+' * •> ( UL9 4 V -0 ilü 0 AC0 3 r D, F j J M - Z Ü f f i H H W Vtm A C 0 3 D JM , A C 0 3 D JM - Z A C 0 3 F JM , A C 0 3 F JM - Z Vd sm 500 700


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    PDF AC03rD, OAC03rD, AC03r AC03FJM, AC03FJM-Z AC03DJM, AC03DJM-Z 50Hz/60Hz, 110T AC03DJM AC03DJM-Z AC03DSM AC03DSMA AC03FJM AC03FJM-Z AC03FSM AC03FSMA lf7a

    Untitled

    Abstract: No abstract text available
    Text: Terminals -*Æ 3 LOCKING FORK TERMINALS Dimensions In. PANDUIT Part Number Nylon Insulated • Insulation Grip Sleeve • Installs Like a Fork, But Holds Like a Ring \ LISTED C G Qty. Bulk Ctn. Qty. Bulk Ctn. Qty. #6 .82 .27 .22 .63 100 500 1000 6000 .85


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    PDF PN18-6LFW-C PN18-10LFN-C PN14-6LFW-C PV18-6LFX-C PV18-8LFX-C PV18-10LFX-C PV14-6LFX-C 14-10LF PV10-6LFX-L PV10-14LFX-L

    2N1131

    Abstract: 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20 60


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79

    BC16

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC16 2N1131 2N1132 2N4037 BC177

    Untitled

    Abstract: No abstract text available
    Text: 12 - Sensitron Hermetic Discrete IGBTs in TO-254 & TO-258 Packages 2.1- Hyper Fast IGBT Devices: Vces Part Number SHDG1001 SHDG1002 Volts 500 600 Continuous Collector Current lc@Tc=90°C Continuous Collector Current lc @ Tc=25°C Amps 24 24 Amps 48 48 Pulsed


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    PDF O-254 O-258 SHDG1001 SHDG1002 SHDG1003 SHDG1004 SHDG1005 SHDG1006

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC10E416 MC100E416 Differential D and Q; VBB available 600 ps Max. Propagation Delay High Frequency Outputs 2 Stages of Gain Extended 100E VEE Range of -4.2V to -5.46V Internal 75k£i Input Pulldown Resistors The MC 10E416/100E416 is a 5-bit differential line receiving device. The 2.0 GHz


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    PDF MC10E416 MC100E416 10E416/100E416 hig200

    Untitled

    Abstract: No abstract text available
    Text: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Differential D and Q Vbb output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain Extended 100E V ee range of -4.2V to -5.46V


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    PDF SY10E416 SY100E416 600ps 75Kil 10E/100E416 SY10E416 SY100E416 SY10E416JC J28-1 SY100E416JC

    Untitled

    Abstract: No abstract text available
    Text: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR FEATURES • ■ Differential D and Q ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ V bb output for single-ended use ■ 600ps max. propagation delay ■ High frequency outputs


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    PDF SY10E416 SY100E416 600ps 10/100E SY10E416JC J28-1 SY10E416JCTR SY100E416JC

    Untitled

    Abstract: No abstract text available
    Text: Q U IN T ! IN F D IF F E R E N T IA * ' .Y I Ù E 4 16 3 V100E 4 ! R R E C E IV E R D E S C R IP TIO N F E A TU R E S Differential D and Q Extended 100E V ee range of -4.2V to -5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs


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    PDF V100E 600ps 75Kf2 10E/100E416 28-pin SY10E416JC SY10E416JCTR SY100E416JC SY100E416JCTR J28-1

    Untitled

    Abstract: No abstract text available
    Text: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR DESCRIPTION FEATURES Differential D and Q Extended 100E V ee range of -4.2V to -5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain


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    PDF SY10E416 SY100E416 600ps SY10/100E416

    Untitled

    Abstract: No abstract text available
    Text: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR DESCRIPTION FEATURES Differential D and Q Extended 100E V ee range of -4.2V to -5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain


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    PDF SY10E416 SY100E416 600ps SY10/100E416

    TRANSistor BC108

    Abstract: 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132 2N3053
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 TRANSistor BC108 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132