Untitled
Abstract: No abstract text available
Text: PAN-TERM Fork Terminals LOCKING FORK TERMINALS Dimensions In. A W C G Std. Pkg. Qty. PN18-6LF-C Red .145 #6 .82 .27 .22 .63 100 500 1000 6000 PN18-6LFW-C Red .145 #6 .85 .29 .22 .64 100 500 1000 6000 Red .145 #8 .89 .29 .25 .68 100 500 1000 6000 Red .145
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PN18-6LF-C
PN18-6LFW-C
PN18-10LFN-C
PN14-6LF-C
PV18-8LF-C
PV18-10LF-C
PV14-6LFW-C
PV14-8LF-C
PV14-10LF-C
PV14-10LFN-C
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Sensick P
Abstract: No abstract text available
Text: Photoelectric Proximity Switch WT 250, Background Suppression, Red Light – DC Scanning distance 10 . 600 mm Dimensional illustration 19.2 Photoelectric proximity switch 4 43 20 4.9 5 60 10 90° 18.8 WT 250-P 460 WT 250-N 162 WT 250-N 460 SENS. Max. 7 8
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250-P
250-N
black11)
gray11)
white11)
Sensick P
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Untitled
Abstract: No abstract text available
Text: SY10E416 SY100E416 FINAL QUINT DIFFERENTIAL LINE RECEIVER DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain Internal 75KΩ input pull-down resistors
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SY10E416
SY100E416
600ps
10E/100E416
28-pin
J28-1
SY10E416JCTR
SY100E416JC
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semikron skmt E63 532
Abstract: semikron skMt 132 /04 semikron skMt 132 SKMT132 semipack semikron skmt e63532 semikron skkt 132 SKND 162/12 semikron skMt 25
Text: VRSM VRRM IFRMS maximum value for continuous operation 350 A V V IFAV (sin. 180; Tcase = 100 °C) 220 A 400 400 SKND 165/04 600 600 SKND 165/06 800 800 SKND 165/08 1200 1200 SKND 165/12 Symbol Conditions SKND 165 Units sin. 180; Tcase = 100 °C 220 A IFSM
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1N1542
Abstract: 1n2238A
Text: rectifiers 10 Part A 150°C PIV rnA 150°C 6 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 5 600 50 100 150 200 300 400 500 600 50 100 200 300 400 500 600 50 50 100 100 200 240 200 400 480 400 600 720 600 50 200 300 400 500 600 500
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1N1348B,
1N1537
1N1538,
1N2232,
1N2232A,
1N2234,
1N2234A,
1N2236,
N2236A,
1N2238,
1N1542
1n2238A
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Untitled
Abstract: No abstract text available
Text: P6SMB6V8 . P6SMB300A P6SMB6V8C . P6SMB250CA 600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor Diodes Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.8 to 300 V Power 600 W / ms R Glass passivated junction
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P6SMB300A
P6SMB250CA
SMB/DO-214AA
EIA-RS-481)
P6SMB250C
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semikron bridge rectifier sk 8 25 08
Abstract: No abstract text available
Text: se MIKRDN V rsm V rrm Ifrms maximum values for continuous operation 175 A | 250 A | 250 A V V Ifav (sin. 180; Tease — 100 A (85 °C) 160 A (95 °C) 500 400 SKKD 100/04 160 A (95 °C) 900 800 SKKD 100/08 SKKD 162/08 1300 1200 SKKD 100/12 SKKD 162/12 SKKE 162/12
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SKKD100
SKMD1001)
SKKD162
SKND1621)
fll3bb71
QQ04b77
semikron bridge rectifier sk 8 25 08
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PV22-10R-C
Abstract: No abstract text available
Text: R u ro u ir Electrical Group MULTIPLE STUD TERMINALS Dimensions In. A W C G Std. Pkg. Qty. #6, #8, #10 .95 .31 .25 .70 100 500 1000 6000 .162 #6, #8, #10 .95 .31 .25 .70 100 500 1000 6000 .225 #6, #8, #10 1.15 .37 .31 .87 50 500 500 CT-100Í CT-600:): 3000 CT-1550Í
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CT-100Í
CT-600:
CT-1550Í
CT-1551Í
PN10-610R-L
PV22-2R-C
18-6R
V18-10R
PV18-14RX-C
PV18-56RX-C
PV22-10R-C
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Untitled
Abstract: No abstract text available
Text: - DO-35 Standard Zener Diodes 500 mW _ Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) * vF @ lF Pd (mA) max (V) (mA) (W) 1764 1.1 200 0.5 162 1701 1.1 200 0.5 1.0 151 1587 1.1 200 0.5 25 1.0 138 1443
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DO-35
u5-50
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hp 2503
Abstract: KG41 KG252 Pole-120 kg64b KG100C
Text: KG-Switches Technical Data KG 125 KG 160 KG250 KG315 KG10 KG20 KG32 KG10A KG20A KG32A KG41 KG64 KG80 KG100 KG126 KG161 KG251 KG316 KG10B KG20B KG32B KG41B KG64B KG80C KG100C KG127 KG 162 KG252 KG317 Selection Data V V V V 690 660 300 400 690 660 600 500 690
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KG250
KG315
KG10A
KG20A
KG32A
KG100
KG126
KG161
KG251
KG316
hp 2503
KG41
KG252
Pole-120
kg64b
KG100C
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1N52398
Abstract: 1N52288 1n52348 317 on zener e4b diode 1587-1 1N5223B 1N5224B 1N5225B 1N5226B
Text: - DO-35 Standard Zener Diodes 500 mW CPE Electrical Characteristics (At Ta=25°C, U nless Otherwise Specified) 1 * ZSM vF (mA) max (V) (mA) (W) 1764 1.1 200 0.5 162 1701 1.1 200 0.5 1.0 151 1587 1.1 200 0.5 25 1.0 138 1443 1.1 200
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DO-35
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
D0-35/D0-4T
ui-50
1N52398
1N52288
1n52348
317 on zener
e4b diode
1587-1
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thyristor t16
Abstract: thyristor t16 400
Text: se MIKRDN V rsm V rrm dv/ SEMIPACK 2 Thyristor / Diode Modules Itrms (maximum value for continuous operation V drm dt)cr 220 A 250 A 220 A 250 A V V/)iS 148 A 168 A 148 A 168 A SKKT SKKT SKKH SKKH 162/08 D Itav (sin. 180; Tcase = 80 °C) V 500 132/08 D
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KT162038
Q75fifi
thyristor t16
thyristor t16 400
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110T
Abstract: AC03DJM AC03DJM-Z AC03DSM AC03DSMA AC03FJM AC03FJM-Z AC03FSM AC03FSMA lf7a
Text: 162 — — e A C 0 3 r D, F j J M , o n a t > t i£ NT-7 A C 0 3 r A C 0 3 r D, F j J M - Z 3A K fó , .+' * •> ( UL9 4 V -0 ilü 0 AC0 3 r D, F j J M - Z Ü f f i H H W Vtm A C 0 3 D JM , A C 0 3 D JM - Z A C 0 3 F JM , A C 0 3 F JM - Z Vd sm 500 700
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AC03rD,
OAC03rD,
AC03r
AC03FJM,
AC03FJM-Z
AC03DJM,
AC03DJM-Z
50Hz/60Hz,
110T
AC03DJM
AC03DJM-Z
AC03DSM
AC03DSMA
AC03FJM
AC03FJM-Z
AC03FSM
AC03FSMA
lf7a
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Untitled
Abstract: No abstract text available
Text: Terminals -*Æ 3 LOCKING FORK TERMINALS Dimensions In. PANDUIT Part Number Nylon Insulated • Insulation Grip Sleeve • Installs Like a Fork, But Holds Like a Ring \ LISTED C G Qty. Bulk Ctn. Qty. Bulk Ctn. Qty. #6 .82 .27 .22 .63 100 500 1000 6000 .85
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PN18-6LFW-C
PN18-10LFN-C
PN14-6LFW-C
PV18-6LFX-C
PV18-8LFX-C
PV18-10LFX-C
PV14-6LFX-C
14-10LF
PV10-6LFX-L
PV10-14LFX-L
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2N1131
Abstract: 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20 60
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
2N1131
2N1132
2N4037
BC177
BCY79
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BC16
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
BC16
2N1131
2N1132
2N4037
BC177
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Untitled
Abstract: No abstract text available
Text: 12 - Sensitron Hermetic Discrete IGBTs in TO-254 & TO-258 Packages 2.1- Hyper Fast IGBT Devices: Vces Part Number SHDG1001 SHDG1002 Volts 500 600 Continuous Collector Current lc@Tc=90°C Continuous Collector Current lc @ Tc=25°C Amps 24 24 Amps 48 48 Pulsed
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O-254
O-258
SHDG1001
SHDG1002
SHDG1003
SHDG1004
SHDG1005
SHDG1006
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC10E416 MC100E416 Differential D and Q; VBB available 600 ps Max. Propagation Delay High Frequency Outputs 2 Stages of Gain Extended 100E VEE Range of -4.2V to -5.46V Internal 75k£i Input Pulldown Resistors The MC 10E416/100E416 is a 5-bit differential line receiving device. The 2.0 GHz
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MC10E416
MC100E416
10E416/100E416
hig200
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Untitled
Abstract: No abstract text available
Text: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Differential D and Q Vbb output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain Extended 100E V ee range of -4.2V to -5.46V
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SY10E416
SY100E416
600ps
75Kil
10E/100E416
SY10E416
SY100E416
SY10E416JC
J28-1
SY100E416JC
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Untitled
Abstract: No abstract text available
Text: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR FEATURES • ■ Differential D and Q ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ V bb output for single-ended use ■ 600ps max. propagation delay ■ High frequency outputs
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SY10E416
SY100E416
600ps
10/100E
SY10E416JC
J28-1
SY10E416JCTR
SY100E416JC
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Untitled
Abstract: No abstract text available
Text: Q U IN T ! IN F D IF F E R E N T IA * ' .Y I Ù E 4 16 3 V100E 4 ! R R E C E IV E R D E S C R IP TIO N F E A TU R E S Differential D and Q Extended 100E V ee range of -4.2V to -5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs
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V100E
600ps
75Kf2
10E/100E416
28-pin
SY10E416JC
SY10E416JCTR
SY100E416JC
SY100E416JCTR
J28-1
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Untitled
Abstract: No abstract text available
Text: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR DESCRIPTION FEATURES Differential D and Q Extended 100E V ee range of -4.2V to -5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain
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OCR Scan
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PDF
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SY10E416
SY100E416
600ps
SY10/100E416
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Untitled
Abstract: No abstract text available
Text: * QUINT DIFFERENTIAL LINE RECEIVER SYNERGY SY10E416 SY100E416 SEMICONDUCTOR DESCRIPTION FEATURES Differential D and Q Extended 100E V ee range of -4.2V to -5.5V VBB output for single-ended use 600ps max. propagation delay High frequency outputs 2 stages of gain
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OCR Scan
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SY10E416
SY100E416
600ps
SY10/100E416
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TRANSistor BC108
Abstract: 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132 2N3053
Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
TRANSistor BC108
2n4001 TRANSISTOR
TRANSISTOR BC140
Transistor BC177
applications of Transistor BC108
2N40361
Transistor BCY58
2N3419
2N1132
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