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    4T SOT 23 Search Results

    4T SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    4T SOT 23 Price and Stock

    Nexperia PESD2IVN24-TR

    ESD Protection Diodes / TVS Diodes PESD2IVN24-T/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PESD2IVN24-TR Reel 90,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.046
    		Buy Now

    4T SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD301 SCHOTTKY BARRIER DIODE FEATURES   Small Surface Mounting Type High Reliability MARKING: 4T MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol


    Original     		PDF OT-23 OT-23 MMBD301

    diode marking 4t

    Abstract: diode schottky 4T 4T SOT 23 4t marking
    Text: CMLSH2-4T Central TM Semiconductor Corp. SURFACE MOUNT SILICON TRIPLE ISOLATED LOW VF SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4T consists of three 3 Isolated Silicon Schottky Diodes, manufactured in a PICOmini SOT-563 surface mount package. This device is designed for


    Original     		PDF OT-563 23-April diode marking 4t diode schottky 4T 4T SOT 23 4t marking

    4T sot 23

    Abstract: diode marking 4t marking GD sot-23
    Text: MMBD301 Schottky Barrier Diode SOT-23 Features — Surface mount package ideally suited for automatic insertion. Applications — Sourced from process GD. Ordering Information Dimensions in inches and millimeters Type No. Marking MMBD301 Package Code 4T SOT-23


    Original     		PDF MMBD301 OT-23 MMBD301 4T sot 23 diode marking 4t marking GD sot-23

    4T SOT 23

    Abstract: MMBD301 SOT23 JEDEC standard orientation
    Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted


    Original     		PDF MMBD301 OT-23 O-236AB O236AB 4T SOT 23 MMBD301 SOT23 JEDEC standard orientation

    BF 494 C

    Abstract: ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 ZO 607 MA AT-38043-BLK AT-38043-TR2 AT-38043
    Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies Surface Mount Package SOT-343 SC-70 Outline 4T • +25.0 dBm P1dB and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.


    Original     		PDF AT-38043 OT-343 SC-70) AT-38043 5966-1275E BF 494 C ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 ZO 607 MA AT-38043-BLK AT-38043-TR2

    ic sc 6200

    Abstract: transistor 2222a data sheet AT-38043 AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram
    Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies Surface Mount Package SOT-343 SC-70 Outline 4T • +25.0 dBm P1dB and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.


    Original     		PDF AT-38043 OT-343 SC-70) AT-38043 5966-1275E ic sc 6200 transistor 2222a data sheet AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital


    Original     		PDF LMBD301LT1G LMBD301

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package


    Original     		PDF LMDL301T1G

    MMBD301LT1G

    Abstract: MBD301G
    Text: MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an


    Original     		PDF MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G MBD301/D MMBD301LT1G MBD301G

    SOT-23 marking 301

    Abstract: 301 marking code sot-23 4T SOT23 MMBD301LT1G MBD301G
    Text: MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an


    Original     		PDF MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G MBD301, MMBD301 MBD301/D SOT-23 marking 301 301 marking code sot-23 4T SOT23 MMBD301LT1G MBD301G

    MMBD301LT1G

    Abstract: MBD301G
    Text: MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes http://onsemi.com Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an


    Original     		PDF MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G MBD301, MMBD301 MBD301/D MMBD301LT1G MBD301G

    marking 301 sot-23

    Abstract: 301 marking code sot-23 MBD301G MMBD301LT1G marking 4T sot-23 MBD301 MMBD301 MMBD301LT1 MMBD301LT3 MMBD301LT3G
    Text: MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an


    Original     		PDF MBD301, MMBD301LT1 MMBD301 MBD301RS marking 301 sot-23 301 marking code sot-23 MBD301G MMBD301LT1G marking 4T sot-23 MBD301 MMBD301 MMBD301LT1 MMBD301LT3 MMBD301LT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital


    Original     		PDF LMBD301LT1G LMBD301 OT-23

    diode marking 4t

    Abstract: 4t marking
    Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital


    Original     		PDF LMBD301LT1G LMBD301 OT-23 diode marking 4t 4t marking

    maxim max rs232

    Abstract: maxim rs-232 transceivers rs232 Temperature Sensor APP3424 MAX3232 MAX6576 MAX6577 ttl to rs232 cable an-3424
    Text: Maxim > App Notes > Hot-swap and power switching circuits Temperature sensors and thermal management Keywords: RS-232 interface, temperature measurement, power via RS-232 Dec 23, 2004 APPLICATION NOTE 3424 RS-232-powered temperature sensor Abstract: A temperature-sensor chip is powered by the Tx channel of an RS-232 interface chip, and the signal a squarewave


    Original     		PDF RS-232 RS-232 RS-232-powered MAX6577 MAX3232 MAX6576 com/an3424 AN3424, maxim max rs232 maxim rs-232 transceivers rs232 Temperature Sensor APP3424 MAX3232 ttl to rs232 cable an-3424

    709 SOT23

    Abstract: marking 4T sot-23
    Text: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other


    Original     		PDF MBD301 MMBD301LT1 MBD301, MMBD301 709 SOT23 marking 4T sot-23

    MBD301G

    Abstract: MMBD301LT1G MBD301 MMBD301 MMBD301LT1 MMBD301LT3 MMBD301LT3G
    Text: MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an


    Original     		PDF MBD301, MMBD301LT1 MMBD301 MBD301/D MBD301G MMBD301LT1G MBD301 MMBD301 MMBD301LT1 MMBD301LT3 MMBD301LT3G

    MBD301G

    Abstract: MMBD301LT1 MMBD301LT1G MBD301 MMBD301 MMBD301LT3 MMBD301LT3G 301 marking code sot-23
    Text: MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an


    Original     		PDF MBD301, MMBD301LT1 MMBD301 MBD301/D MBD301G MMBD301LT1 MMBD301LT1G MBD301 MMBD301 MMBD301LT3 MMBD301LT3G 301 marking code sot-23

    MBD301

    Abstract: MMBD301 MMBD301LT1
    Text: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other


    Original     		PDF MBD301 MMBD301LT1 MBD301, MMBD301 r14525 MBD301/D MBD301 MMBD301 MMBD301LT1

    transistor kf 469

    Abstract: transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389
    Text: ¥ ti¡%HEWLETT ft "KM PACKARD High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Surface Mount Plastic Package/SOT-343 SC-70 Outline 4T • Transition Freque ncy


    OCR Scan     		PDF HBFP-0420 Package/SOT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-0129E 5968-1684E transistor kf 469 transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389

    GP 809 DIODE

    Abstract: diode GP 829 M229 kl SN 102 94-0 SOT343 42 SOT 343 MARKING BF marking 53 Sot-343 54GHz kf 982 nh TRANSISTOR
    Text: ¥ ti¡¡%HEW LETT ft "KM PACKARD High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Surface Mount Plastic Package/SOT-343 SC-70 Outline 4T • Typical Performance at


    OCR Scan     		PDF HBFP-0405 SC-70 OT-343) Package/SOT-343 SC-70) HBFP-0405 5968-0140E GP 809 DIODE diode GP 829 M229 kl SN 102 94-0 SOT343 42 SOT 343 MARKING BF marking 53 Sot-343 54GHz kf 982 nh TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: What HEW LETT 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Id eal for High Gain, Low C urrent A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • Typical P erform ance at


    OCR Scan     		PDF HBFP-0405 Package/SOT-343 SC-70) SC-70 5968-0140E

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Id eal for High Gain, Low N oise A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • T ran sition F requ en cy


    OCR Scan     		PDF HBFP-0420 Package/SOT-343 SC-70) 5968-0129E

    diode B14A

    Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
    Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


    OCR Scan     		PDF 00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070