M49470
Abstract: MIL-PRF-49470 88011
Text: MIL-PRF-49470 Low Profile Reduced Height - Larger Case Size 50 Volts Cap µF M49470 X 01 475 K A * 4.7 4 Height A Cap inches (mm) Tolerance .240 (6.10) 10% HR S 2 05 BX 475 K 2 * 4 M49470 X 01 475 M A * 4.7 4 .240 (6.10) 20% HR S 2 05 BX 475 M 2 * 4 M49470 X 01 565 K A *
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MIL-PRF-49470
M49470
88011
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Untitled
Abstract: No abstract text available
Text: Composite Backshells 527-475 RFI/EMI Composite Split Backshell Assembly for Size 1 ARINC 600 Series Connector Product Series 527 - Split Backshell A Finish Symbol See Table II 527 - 475 Basic Part Number B XM Dash No. Position B Slot Omit for None (See Table I)
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NOVEMBER2014
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445t
Abstract: VCO190-445T 445-T
Text: VCO Product Specification Model: VCO190-445T Rev: A Date: 4/22/2003 Customer: VARI-L COMPANY Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 415 445 475 MHz X 0.5 1.5 -35 ° to 85 ° C Remarks Tuning Voltage: 415 MHz 475 MHz
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VCO190-445T
445t
VCO190-445T
445-T
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UPS12-475
Abstract: EUROBAT 12V cell phone charger
Text: FEATURES UPS12-475 VALVE REGULATED LEAD ACID BATTERY FOR UPS STANDBY POWER APPLICATIONS 12V 134 AH @ 20 HR RATE, 12V 475 WATTS/CELL @ 15 MIN. RATE • 10 Year design life @ 25°C 77°F · · Absorbent Glass Mat (AGM) technology for efficient gas recombination of up to
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UPS12-475
UPS12-475
EUROBAT
12V cell phone charger
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Untitled
Abstract: No abstract text available
Text: 5 4 3 2 1 REVISION HISTORY ECO _ REV 2 DESCRIPTION PRODUCTION APPROVED DATE ANDY M. 04-26-13 T1 TC4-1W-7ALN+ D 4 D 6 IF J3 3 2 C9 1nF L1 470nH 1 C5 C8 1nF 22pF L2 470nH 0603 R1 475 VCC R2 0603 475 EN GND 14 IF- LO GND ISEL GND 5 B IF+ LTC5551IUF CT GND 12
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470nH
LTC5551IUF
300MHz
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TG110-AE050N5
Abstract: No abstract text available
Text: 3 R29 LED5 475 1% B R41 33 2512 R25 LED1 475 1% R37 33 2512 Q4 RQJ0303PGDQALT 18 19 21 S4 R51 110 2 2 JP2 JP1 1 Q3 RQJ0303PGDQALT 1 2 1 2 JP3 2 3 JP4 4 A0 VCC A1 WP S3 2 A2 SCL VSS SDA Q2 RQJ0303PGDQALT R14 3.3k R1 100 1% 2 V+ IHP C12 IHM S12 ICMP C11 IBIAS
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RQJ0303PGDQALT
CZT5551
LED10
LED11
LED12
TG110-AE050N5
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics Part Number : Description : Product : Multi-layer Ceramic Capacitor CL32F475ZOFNNNE CAP, 4.7㎌, 16V, -20/+80%, Y5V, 1210 A. Samsung Part Number ① Series ② Size ④ Capacitance 32 F 475
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CL32F475ZOFNNNE
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500Mohm
25Mohm
1000Mohm
50Mohm
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Abstract: No abstract text available
Text: SPECIFICATION Reference sheet • Supplier : Samsung electro-mechanics Samsung P/N : CL10A475KQ8NNNL Product : Multi-layer Ceramic Capacitor Description : CAP, 4.7㎌, 6.3V, ±10%, X5R, 0603 A. Samsung Part Number ① Series CL 10 A 475 K Q 8
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CL10A475KQ8NNNL
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Abstract: No abstract text available
Text: SPECIFICATION Reference sheet • Supplier : Samsung electro-mechanics Samsung P/N : CL10A475MQ8NNNC Product : Multi-layer Ceramic Capacitor Description : CAP, 4.7㎌, 6.3V, ±20%, X5R, 0603 A. Samsung Part Number ① Series CL 10 A 475 M Q 8
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CL10A475MQ8NNNC
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Abstract: No abstract text available
Text: SPECIFICATION Reference sheet • Supplier : Samsung electro-mechanics Samsung P/N : CL21A475KACLRNC Product : Multi-layer Ceramic Capacitor Description : CAP, 4.7㎌, ±10%, 25V, X5R, 0805 A. Samsung Part Number ① Series ② Size CL 21 A 475
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CL21A475KACLRNC
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Text: SPECIFICATION Reference sheet • Supplier : Samsung electro-mechanics Samsung P/N: CL05A475MQ5NRNL Product : Multi-layer Ceramic Capacitor Description : CAP, 4.7㎌, 6.3V, ±20%, X5R, 0402 A. Samsung Part Number ① Series ② Size CL 05 A 475
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CL05A475MQ5NRNL
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Abstract: No abstract text available
Text: SPECIFICATION Reference sheet • Samsung P/N : CL10X475KQ8NNNC CAP, 4.7uF, 6.3V, ±10%, X6S, 0603 Description : Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series CL 10 X 475 K Q 8 N
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CL10X475KQ8NNNC
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Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor Reference sheet Samsung P/N: CL05A475MQ3LUNC Description : CAP, 4.7㎌, 6.3V, ±20%, X5R, 0402 A. Samsung Part Number ① Series ② Size CL 05 A 475
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CL05A475MQ3LUNC
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION Reference sheet • Supplier : Samsung electro-mechanics Samsung P/N : CL10A475KQ8NNND Product : Multi-layer Ceramic Capacitor Description : CAP, 4.7㎌, 6.3V, ±10%, X5R, 0603 A. Samsung Part Number ① Series CL 10 A 475 K Q 8
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CL10A475KQ8NNND
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Abstract: No abstract text available
Text: SPECIFICATION Reference sheet • Supplier : Samsung electro-mechanics Samsung P/N : CL10A475KQ8NNNC Product : Multi-layer Ceramic Capacitor Description : CAP, 4.7㎌, 6.3V, ±10%, X5R, 0603 A. Samsung Part Number ① Series CL 10 A 475 K Q 8
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CL10A475KQ8NNNC
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Abstract: No abstract text available
Text: SPECIFICATION Reference sheet • Supplier : Samsung electro-mechanics Samsung P/N : CL10A475MQ8NNND Product : Multi-layer Ceramic Capacitor Description : CAP, 4.7㎌, 6.3V, ±20%, X5R, 0603 A. Samsung Part Number ① Series CL 10 A 475 M Q 8
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CL10A475MQ8NNND
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Abstract: No abstract text available
Text: SPECIFICATION Reference sheet • Samsung P/N : CL10X475MQ8NNNC CAP, 4.7uF, 6.3V, ±20%, X6S, 0603 Description : Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series CL 10 X 475 M Q 8 N
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CL10X475MQ8NNNC
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Abstract: No abstract text available
Text: Alpha and Omega Semiconductor 475 Oakmead Parkway, Sunnyvale, California 94085 USA FOR IMMEDIATE RELEASE Media Contact: Martha Aparicio Tel: 408.789.3233 Email: [email protected] Alpha and Omega Semiconductor Broadens its 600V AlphaIGBT Portfolio
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magnetron hitachi
Abstract: 2M131 Magnetron 2 kW 2M130 2M130 1601-2M131-04A hitachi 3284ps magnetron 2m GALVANOMETER magnetron launcher J30MM
Text: HITACHI Hitachi Electronic Devices Co., Ltd. 3350, Hayano Mobara-shi Chiba-ken 297 Japan Tel : + 81-475-23-1111 Fax : + 81 -475-25-0628 For Messrs. R I C H A R DS O N Date E LECTRONICS, CUSTOMER'S Set. 6, 1996 Ltd. ACCEPTANCE MAGNETRON 2M131 - SPECIFICATIONS
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2M131
2M131
3284PS
magnetron hitachi
Magnetron 2 kW 2M130
2M130
1601-2M131-04A
hitachi 3284ps
magnetron 2m
GALVANOMETER
magnetron launcher
J30MM
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VCU 2136
Abstract: DPU2553 MSP2400 LED TV Screen working Theory ADC2311 IRT1250 DTI2223 APU2471 VCU2136 DIGIT2000
Text: DIGIT2000 DIGITAL TV SYSTEM ITT SEMICOND/ INTERHETALL SDE ]> • MbfiE?]»! 00 0E 475 aSfi « I S I - T - m
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DIGIT2000
DIGIT2000"
DO-41
DO-35
DO-34
55s0iS
VCU 2136
DPU2553
MSP2400
LED TV Screen working Theory
ADC2311
IRT1250
DTI2223
APU2471
VCU2136
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electronic schematic
Abstract: No abstract text available
Text: AMERICAN/ELECTRONIC b3E D • Db7b743 Ü0011Ü5 475 *E]>I HIGH VOLTAGE CYLINDER SILICON RECTIFIERS • DIFFUSED SILICON JUNCTIONS • PRV 150,000 TO 200,000 VOLTS • AVALANCHE CHARACTERISTICS • LOW LEAKAGE • INTERNAL CAPACITOR COMPENSATION * EDI TYPE NO.
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Db7b743
CYL-200
914-9B5-44QO
electronic schematic
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BUK475-400B
Abstract: LD25C BUK475 3909
Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode
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OT186A
475-400B
711002b
0d44b4"
BUK475-400B
LD25C
BUK475
3909
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MIL-C-26655
Abstract: CS13 tantalum
Text: MIL-C-26655B Military Style Tantalum Capacitors - L I MIL-C-26655B STYLES CS12 & CS13 MILITARY CODING SYSTEM CS12 B 475 B TOLERANCE K ±10% M ±20% VOLTAGE B= 6 C = 10 D = 15 Tantalum Capacitors CAPACITANCE Nominal capacitance in micro farads.
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MIL-C-26655B
tor32
MIL-C-26655
CS13 tantalum
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Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE i- 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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475-400B
711002b
D044b4*
BUK475-400B
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