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    458 SOT23 Search Results

    458 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    458 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    470uF 25V TANT

    Abstract: 352068-1 Compact PCI 352068-1 CompactPCI 352068-1 erjm1wsf7m0u SMAJ12CA Diode SMAJ12CA AMP 352068 data sheet header,2x7pin,0.079cc CR16-201JM
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 458 I2C COMPACT PCI HOT SWAP CONTROLLER LTC4240 QUICKEVAL PROCEDURE Demonstration circuit 458 is configured to be a part of the LTC QuickEval system for quick and easy I²C™ control. The QuickEval software is downloaded


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    PDF LTC4240 DC590A, 14-pin DC458 1/16W LTC4240CGN28 SSOP28GN 470uF 25V TANT 352068-1 Compact PCI 352068-1 CompactPCI 352068-1 erjm1wsf7m0u SMAJ12CA Diode SMAJ12CA AMP 352068 data sheet header,2x7pin,0.079cc CR16-201JM

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


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    PDF FMMT458 FMMT558 100ms

    FMMT458

    Abstract: FMMT558
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


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    PDF FMMT458 FMMT558 100ms FMMT458 FMMT558

    FMMT458

    Abstract: FMMT558 ic tba 500 DSA003671
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


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    PDF FMMT458 FMMT558 Vol75 100ms FMMT458 FMMT558 ic tba 500 DSA003671

    FMMT458TA

    Abstract: fmmt458 marking 458
    Text: A Product Line of Diodes Incorporated FMMT458 400V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • 500mW Power Dissipation 225mA Continuous Collector Current IC Up to 1A Peak Pulse Current


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    PDF FMMT458 500mW 225mA 100mA FMMT558 AEC-Q101 J-STD-020 MILSTD-202, DS33088 FMMT458TA fmmt458 marking 458

    FMMT458

    Abstract: fmmt458ta 400V 100MA NPN SOT23
    Text: A Product Line of Diodes Incorporated FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 400V • Case: SOT23 • IC = 225mA high Continuous Collector Current • UL Flammability Rating 94V-0 • ICM = 1A Peak Pulse Current


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    PDF FMMT458 225mA 500mW 100mA FMMT558 AEC-Q101 J-STD-020 MILSTD-202, DS33088 FMMT458 fmmt458ta 400V 100MA NPN SOT23

    FMMT458

    Abstract: FMMT558 Transistor B C 458 DSA003695
    Text: FMMT458 1.6 Tamb=25°C IC/IB =20 - Volts - (Volts) 1.2 1.0 0.8 0.01 0.1 1 10 0.001 20 1 10 VCE(sat) v IC VCE(sat) v IC VCE =10V -55°C +25°C +100°C +175°C 1.6 300 20 IC/IB =10 1.0 200 - (Volts) 1.4 1.2 0.8 1.2 0.6 0.4 0.6 V 100 0.2 0.4 0.2 0.01 0.1 10


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    PDF FMMT458 FMMT558 100mA, 20MHz -10mA FMMT458 FMMT558 Transistor B C 458 DSA003695

    BD558

    Abstract: D938 D934 49/transistor b527
    Text:  36 35 DD 6 1 23 4 5 6 7 3 8 9 A 17B C D EF C D   7F C     7C      7      C  7 3 77 !C " 7#$7% D B1!B1D7"!B5868DB 63#D7D#4 36B7135$D58#D$6B $D 8D74!6B%&918 DAB5498#B C2&'B  48D5AD6A47


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    PDF B5868 48D5AD 12FB1 548D5AD 6477D D3647D5 A87A486 D7A477D 12FB1 93/D5 BD558 D938 D934 49/transistor b527

    smd transistors 458

    Abstract: FMMT458 fmmt458 smd FMMT458 TA
    Text: Transistors SMD Type High Voltage Transistor FMMT458 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 400 Volt VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector


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    PDF FMMT458 OT-23 storage100 100mA, 20MHz -10mA smd transistors 458 FMMT458 fmmt458 smd FMMT458 TA

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FMMT458 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 400 Volt VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector


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    PDF FMMT458 OT-23 100mA, 20MHz -10mA

    Untitled

    Abstract: No abstract text available
    Text: FMMT458 NPN Type Elektronische Bauelemente Palstic Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector Power dissipation 3 3 PCM : 0.5 W Collector Current ICM : 225 mA Collector-base voltage


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    PDF FMMT458 OT-23 01-Jun-2002

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


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    PDF BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q

    S260-DO

    Abstract: Q62703Q1640 Q62703-Q1657 GSO06723 Q62703-Q1608 Q62703-Q1640 S260 VSO06723 code ls
    Text: SOT-23 LED, Diffused LS S260, LY S260, LG S260 Besondere Merkmale eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar für alle SMT-Bestück- und Löttechniken geeignet gegurtet 8-mm-Filmgurt Störimpulsfest nach DIN 40839


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    PDF OT-23 VSO06723 S260-DO GSO06723 S260-DO Q62703Q1640 Q62703-Q1657 GSO06723 Q62703-Q1608 Q62703-Q1640 S260 VSO06723 code ls

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 3 - OCTOBER 1995_ FEATURES * 400 Volt VCE0 COMPLEMENTARY T Y P E - FMMT558 PARTMARKING D ETA IL- 458 SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage


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    PDF FMMT458 FMMT558 300ns. t170S7fl

    458 SOT23

    Abstract: No abstract text available
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes ZENER DIODES type Vz typ. at_ Sz @ lFRM Ptot max.


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    PDF 250nA PLVA400 PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A 5656A 458 SOT23

    SST201

    Abstract: J201 equivalent 458 SOT23 marking 458 SOT23 SOT23 equivalent
    Text: ITT"S iliconix SST201 SERIES N-Channel JFETs in c o rp o ra te d The SST201 Series is the SOT-23 equivalent of our popular J201 Series. It features low leakage, very low noise, and low cutoff voltage for use with low level power supplies. The SST201 is excellent for battery


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    PDF SST201 SST202 OT-23 OT-23 J201 equivalent 458 SOT23 marking 458 SOT23 SOT23 equivalent

    marking ZS SOT-23

    Abstract: marking M2 JFET BSR56
    Text: SILICONIX INC ÎÔE D • 0254735 0G13öbT 7 ■ BSR56 SERIES J 7 IS S & 1 T-35-Z.S N-Channel JFETs The BSR56 Series Is a n-ohannel JFET mounted in our popular SOT-23 package, Its low cost and c d s ON make It a good choice for an all-purpose analog switch, while Its high gfa' and good


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    PDF BSR56 OT-23 T-35-Z BSR57 BSR58 OT-23 marking ZS SOT-23 marking M2 JFET

    transistors BC 457

    Abstract: BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23
    Text: SIEMENS PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfiguration


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    PDF Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 OT-23 cur100 transistors BC 457 BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23

    Untitled

    Abstract: No abstract text available
    Text: Lamp-Tape and Packaging Light emitling d iod es are available in taped form. P ackaging of LE D s on continuous tapes is base d o n IEC standard 286.2. The com ponent tapes are wound on reels and su pp lied in boxes containing two reels each. O ne reel co nsists 1000 p ie ce s of the 5 m m ‘type


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    PDF E7500" 5460-DG E7500. E7501" 5460-G

    marking BJp

    Abstract: BCX71J f 630 Bkp marking code BCX71H
    Text: Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max, 45 V) 1 base • Low noise. 2 emitter 3 collector APPLICATIONS • Low level, low noise, low frequency applications in


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    PDF BCX70 BCX71 BCX71G BCX71H BCX71J BCX71K marking BJp f 630 Bkp marking code

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.


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    PDF Q0EMS73 bbS3031 003457b

    Q62703Q1640

    Abstract: No abstract text available
    Text: SIEMENS SOT-23 LED, Diffused LS S260, LY S260, LG S260 Besondere Merkmale • • • • • • eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar für alle SMT-Bestück- und Löttechniken geeignet gegurtet 8-mm-Filmgurt


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    PDF OT-23 S260-DO S260-DO Q62703Q1640

    MA4T64400

    Abstract: low noise transistors MA4T645 MA4T644
    Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t


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    PDF A4T64400 MA4T64435 MA4T64433 OT-23 MA4T64539 OT-143 4T644X OT-143) MA4T64400 low noise transistors MA4T645 MA4T644

    Untitled

    Abstract: No abstract text available
    Text: RF2377 MICRO-DEVICES PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AM PLIFIER T y p ic a l A p p lic a tio n s • CDMA PCS/Cellular Handsets W-CDMA Handsets GENERAL PURPOSE AMPLIFIERS • TDMA PCS/Cellular Handsets P ro d u c t D e s c rip tio n The RF2377 is a linear variable gain amplifier suitable for


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    PDF RF2377 RF2377 -14dBm