MAX253
Abstract: MAX253 8 pin 4340 transformer
Text: MAX253 RELIABILITY REPORT FOR MAX253CSA+ PLASTIC ENCAPSULATED DEVICES May 6, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.
|
Original
|
PDF
|
MAX253
MAX253CSA+
NCVACO002B
/-2000V
/-100mA.
XCVAAB006C,
MAX253
MAX253 8 pin
4340 transformer
|
SMD diode color code
Abstract: j 6910 B65844-N1110-T2 B65844-C1010-D2 marking code UL SMD Transistor B65843-A-R30 B65844-C1010-D1 MATSUSHITA 4000 N30 transformer core B65844-L1010-D2
Text: EP 13 Core B65843 ● In accordance with IEC 61596 ● For transformers featuring high inductance and low overall height ● For power applications ● EP cores are supplied in sets Magnetic characteristics per set Σl/A le Ae Amin Ve = 1,24 mm–1 = 24,2 mm
|
Original
|
PDF
|
B65843
B65843-A300-J67
B65843-A-R67
B65843-A-R87
10048-J
B65844
B65844-N1110-T1
B65844-N1110-T2
SMD diode color code
j 6910
B65844-N1110-T2
B65844-C1010-D2
marking code UL SMD Transistor
B65843-A-R30
B65844-C1010-D1
MATSUSHITA 4000
N30 transformer core
B65844-L1010-D2
|
TI 9023 IC data
Abstract: MAX743
Text: MAX743 RELIABILITY REPORT FOR MAX743EPE+ PLASTIC ENCAPSULATED DEVICES January 3, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.
|
Original
|
PDF
|
MAX743
MAX743EPE+
/-1500V
/-250mA.
XYSABE010A,
DYSAAQ002Q,
TI 9023 IC data
MAX743
|
Untitled
Abstract: No abstract text available
Text: MAX5812 RELIABILITY REPORT FOR MAX5812LEUT+ PLASTIC ENCAPSULATED DEVICES January 5, 2010 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Ken Wendel Quality Assurance Director, Reliability Engineering Maxim Integrated Products. All rights reserved.
|
Original
|
PDF
|
MAX5812
MAX5812LEUT+
MAX5812
/-250mA.
96hrs.
C/150
|
Untitled
Abstract: No abstract text available
Text: MAX5138 RELIABILITY REPORT FOR MAX5138BGTE+T PLASTIC ENCAPSULATED DEVICES June 10, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.
|
Original
|
PDF
|
MAX5138
MAX5138BGTE
/-1000V
JESD22-A114.
/-250mA
JESD78.
|
defect ppm sampling
Abstract: MAX11040K MAX11040KGUU
Text: MAX11040K RELIABILITY REPORT FOR MAX11040KGUU+ PLASTIC ENCAPSULATED DEVICES May 18, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.
|
Original
|
PDF
|
MAX11040K
MAX11040KGUU+
JESD22A114.
/-250mA
JESD78.
ST0ZBQ001H,
defect ppm sampling
MAX11040K
MAX11040KGUU
|
MAX16840ATB
Abstract: mosfet mttf MAX16840
Text: MAX16840 RELIABILITY REPORT FOR MAX16840ATB+ PLASTIC ENCAPSULATED DEVICES June 8, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.
|
Original
|
PDF
|
MAX16840
MAX16840ATB+
/-2500V
JESD22-A114.
/-100mA
JESD78.
MAX16840ATB
mosfet mttf
MAX16840
|
MAX11060
Abstract: MAX11060GUU
Text: MAX11060 RELIABILITY REPORT FOR MAX11060GUU+ PLASTIC ENCAPSULATED DEVICES May 18, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.
|
Original
|
PDF
|
MAX11060
MAX11060GUU+
JESD22A114.
/-250mA
JESD78.
MAX11040KGUU+
ST0ZBQ001H,
MAX11060
MAX11060GUU
|
Untitled
Abstract: No abstract text available
Text: MAX17598 RELIABILITY REPORT FOR MAX17598ATE+T PLASTIC ENCAPSULATED DEVICES February 17, 2015 MAXIM INTEGRATED 160 RIO ROBLES SAN JOSE, CA 95134 Approved by
|
Original
|
PDF
|
MAX17598
MAX17598ATE
/-2500V
JESD22-A114.
/-250mA
JESD78.
|
AP4340
Abstract: No abstract text available
Text: Application Note 1078 Application Notes for AP4340/L System Solution Prepared by Su Qing Hua System Engineering Dept. transformer to the primary side, and provided as a triggering primary switch turn on signal for the main controller. By fast response to secondary side voltage, the
|
Original
|
PDF
|
AP4340/L
AP4340/L.
AP4340/L,
AP4340/Lâ
AP4340/L
AP4340
|
TS8019
Abstract: smd 43a NA0069
Text: Bothhand USA http://www.bothhandusa.com [email protected], 978-887‐8050 Packing Information Part Category Pins Port Type Speed Part Packing Manner Q’ty per Tube/Reel Q’ty/ Inner box Q’ty/ Carton Transformer/Filter Transformer/Filter
|
Original
|
PDF
|
DA8T001A3
DU8T20103
TS8019
smd 43a
NA0069
|
bifa antenna
Abstract: 868 printed antenna design HTA 200-S Si446x/Si4362
Text: AN686 A NTENNAS FOR THE S i4 4 5 5 /4 3 5 X RF IC S 1. Introduction This application note provides guidelines and design examples to help users design antennas for the next generation EZRadio RF ICs. The matching principles for the Si4455 are described in detail in “AN693: Si4455
|
Original
|
PDF
|
AN686
Si4455
AN693:
Si4455
Si435x,
Si446x
AN643:
Si446x/4362
AN685:
Si4455/435x
bifa antenna
868 printed antenna design
HTA 200-S
Si446x/Si4362
|
Untitled
Abstract: No abstract text available
Text: Power Inductors - Shielded SPECIFICATIONS CTCDRH5D18F Series From 3.3 µH to 330 µH Not shown at actual size. RoHS Compliant ctparts.com Parts are available in ±30% tolerance only. Inductance µH ±30% L Test Freq. (kHz) CTCDRH5D18F-3R3N CTCDRH5D18F-4R1N
|
Original
|
PDF
|
CTCDRH5D18F
CTCDRH5D18F-3R3N
CTCDRH5D18F-4R1N
CTCDRH5D18F-5R4N
CTCDRH5D18F-6R2N
CTCDRH5D18F-8R9N
CTCDRH5D18F-100N
CTCDRH5D18F-120N
CTCDRH5D18F-150N
CTCDRH5D18F-180N
|
Untitled
Abstract: No abstract text available
Text: Power Inductors - Shielded CTCDRH5D18 Series From 4.1 µH to 330 µH Not shown at actual size. RoHS Compliant Available ctparts.com SPECIFICATIONS Parts are available in ±30% tolerance only. CTCDRH5D18F Please specify “F” for RoHS Compliant Inductance
|
Original
|
PDF
|
CTCDRH5D18
CTCDRH5D18F
|
|
|
N30 transformer core
Abstract: siemens siferrit N27 siemens N26 core siemens siferrit N87 N26 core transformer t38 transformer siemens N30 B65755-J-R87 tt 2144 SIEMENS n87
Text: Ferrites and Accesories Design Parameters for Low-Distortion and Power Transformers TT/PR Cores Preliminary Data Sheet Vakatseite 2 Design Parameters for Low-Distortion and Power Transformers 1 TT/PR Cores Fundamentals for low-distortion transformers for digital data transmission (ISDN, xDSL)
|
Original
|
PDF
|
|
PEB 20534
Abstract: PXB 4220 MOTOROLA 4221 tsx micro TBR24 PXB4225 pxb 4225 P-BGA-272
Text: P R O D U C T B R I E F Single Channel T3/E3 Framer & LineInterface, mapping ATM and PPP/HDLC The TE3-FALC is a complete solution for a T3/E3 broadband interface. It includes DS3/E3 framing, analogue line interface, two jitter attenuators and the mapping of ATM or PPP/HDLC. The TE3-FALC®
|
Original
|
PDF
|
B119-H7761-G1-X-7600
PEB 20534
PXB 4220
MOTOROLA 4221
tsx micro
TBR24
PXB4225
pxb 4225
P-BGA-272
|
BSDL infineon pxb
Abstract: MOTOROLA 4221 digital temperature controller 751 S PEF 2256 H 4221 motorola transistor datasheet All-Line PEF 20534 relay srd srd relay TBR24
Text: P R O D U C T B R I E F Single channel T3/E3 Framer & Line Interface for ATM, Frame Relay and PPP/IP. The TE3-FALC is a complete solution for a T3/E3 broadband interface. It includes DS3/E3 framing, analog line interface, two jitter attenuators and the mapping of ATM or PPP/HDLC. The TE3-FALC® also
|
Original
|
PDF
|
B119-H7761-G1-X-7600
BSDL infineon pxb
MOTOROLA 4221
digital temperature controller 751 S
PEF 2256 H
4221 motorola transistor datasheet
All-Line
PEF 20534
relay srd
srd relay
TBR24
|
IRFH5010TR
Abstract: IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF
Text: PD -96297 IRFH5010PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 100 V 9.0 mΩ 65 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
|
Original
|
PDF
|
IRFH5010PbF
IRFH5010TRPBF
IRFH5010TR2PBF
181mH,
IRFH5010TR
IRFH5010TRPBF
PQFN footprint
mosfet 500V 50A
IRFH5010
AN-1154
IRFH5010TR2PBF
|
Untitled
Abstract: No abstract text available
Text: PD-96297A IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
|
Original
|
PDF
|
PD-96297A
IRFH5010PbF
IRFH5010TRPBF
IRFH5010TR2PBF
181mH,
|
IRFH5010TRPBF
Abstract: mosfet 500V 50A IRFH5010TR
Text: PD-96297A IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
|
Original
|
PDF
|
PD-96297A
IRFH5010PbF
181mH,
IRFH5010TRPBF
mosfet 500V 50A
IRFH5010TR
|
Untitled
Abstract: No abstract text available
Text: PD - 96236A IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 3.7mΩ
|
Original
|
PDF
|
6236A
IRF1404ZGPbF
O-220AB
O-220AB
|
IRF1404Z
Abstract: No abstract text available
Text: PD - 11371 IRF1404Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 3.7mΩ
|
Original
|
PDF
|
IRF1404Z
O-220AB
IRF1010
IRF1404Z
|
transformer 4340
Abstract: No abstract text available
Text: PD - 96236A IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 3.7mΩ
|
Original
|
PDF
|
6236A
IRF1404ZGPbF
O-220AB
IRF1404ZGPbommended
O-220AB
transformer 4340
|
IRF1404ZG
Abstract: IRF1404ZGPBF
Text: PD - 96236 AUTOMOTIVE MOSFET IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET Power MOSFET D VDSS = 40V
|
Original
|
PDF
|
IRF1404ZGPbF
O-220AB
IRF1404ZG
IRF1404ZGPBF
|
