c2058
Abstract: C1809 C2063M C4041 C4649 C4045 C4103 C4099 C4039 C4044
Text: ff nnnn T ransistors RF Transistors AM FM Function VHFUHF L-fT - GAIN BANDWIDTH PRODUCT MHz Cob 230 250 300 400 500 800 1100 • 0.8 • 2SC 4774 •2S C 4713K 1.0 • 1.1 CL < o u 2S C 4619 • 2S C 4100 2SC3Û82K 2S C 4773 2SC 4326LK LU O z <
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3802K
2SC3801
2SC4084
3839K
3838K
2SA1733K
3837K
4713K
4326LK
4042S
c2058
C1809
C2063M
C4041
C4649
C4045
C4103
C4099
C4039
C4044
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Untitled
Abstract: No abstract text available
Text: h 7 > ' / X $ / I ransistors 4326LK 2SC 4326LK V b 7 > * $ f V Epitaxial Planar NPN Silicon Transistor RF y Switch Usage 1i+îfi \t"üEl/Dimensions Unit : mm 1) 2 ) § * * s'/ J v $ l 'o 3) R F i t R F ^-T ^ffi L T iS o • Features 1) Low output ON resistance
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2SC4326LK
4326LK
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TA143E
Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Text: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
RU101
RU201
RU901
TA143E
2SD 647 transistor
TRANSISTOR 2SC 733
C4672
144EK
113ZE
Transistor 2SA 2SB 2SC 2SD
114EU
TC114EKA
TA123JE
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2SC 1885
Abstract: 2sc low noise
Text: T ransistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to TO-220, Pc=35W transistors. EM3 • UMT • SMT Three types are available to allow the most suitable package depending on size specifications.
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O-220,
SC-59/Japanese
OT-23)
01CL2
2SC 1885
2sc low noise
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