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    431W TRANSISTOR Search Results

    431W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    431W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 7MBP150RTB060 600V / 150A 7 in one-package IPM-R3 series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 7MBP150RTB060

    Untitled

    Abstract: No abstract text available
    Text: 6MBP150RTB060 600V / 150A 6 in one-package IPM-R3 series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 6MBP150RTB060

    6MBP150RTB060

    Abstract: No abstract text available
    Text: 6MBP150RTB060 600V / 150A 6 in one-package IPM-R3 series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 6MBP150RTB060 6MBP150RTB060

    431W

    Abstract: 431w transistor IPM-R3
    Text: 7MBP150RTB060 600V / 150A 7 in one-package IPM-R3 series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 7MBP150RTB060 431W 431w transistor IPM-R3

    Untitled

    Abstract: No abstract text available
    Text: 7MBP150RTB060 600V / 150A 7 in one-package IPM-R3 series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 7MBP150RTB060

    431W

    Abstract: 6MBP150
    Text: 6MBP150TEA060 600V / 150A 6 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 6MBP150TEA060 cu060 trr12 Irr12 431W 6MBP150

    6MBP150TEA060

    Abstract: 6MBP150TEA-060 431w a 4504 6MBP150 431w transistor IPM DC igbt driver A 4504 AC200V AC2500
    Text: 6MBP150TEA060 600V / 150A 6 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 6MBP150TEA060 cu060 trr12 Irr12 6MBP150TEA060 6MBP150TEA-060 431w a 4504 6MBP150 431w transistor IPM DC igbt driver A 4504 AC200V AC2500

    6MBP150RTJ060

    Abstract: AC200V AC2500 HCPL4504 P610 P621 6mbp150 all transistor P621 P621 ic
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date


    Original     		PDF 6MBP150RTJ060 H04-004-07 H04-004-06 H04-004-03 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610 P621 6mbp150 all transistor P621 P621 ic

    PC125 Series

    Abstract: IGBT control circuit fuji igbt igbt fuji 7MBP150RTB060 AC200V AC2500 P610 P611 fuji electric ipm
    Text: a １．Package Outline Drawings Package type : P611 1 0 9 ±1 9 5 ±0.3 1 3 . 8 ±0.3 67.4 1 0 . 1 6 ±0.2 1 0 . 1 6±0.2 1 0 . 1 6±0.2 1 5 . 2 4 ±0.25 3 . 2 2 ±0.3 2 ±0.3 5 . 0 8±0.15 5 . 0 8±0.15 5 . 0 8±0.15 1 4 7 4-φ 5 . 5 2 . 5 4 ±0.1 10 16


    Original     		PDF MS6M0657 H04-004-03 PC125 Series IGBT control circuit fuji igbt igbt fuji 7MBP150RTB060 AC200V AC2500 P610 P611 fuji electric ipm

    h a 431 transistor

    Abstract: 431w transistor fuji 3 kV IGBT hcpl 322 ic or 4071 datasheet P621 P621 capacitor fuji ipm fuji electric ipm ipm application note fuji
    Text: １．Package Outline Drawings 1 3 . 8 ±0.3 109 ±1 95 ±0.3 66.44 1 0 ±0.2 3 . 2 2 ±0.3 10 6 ±0.2 6 ±0.15 1 0 ±0.2 1 2 ±0.25 ±0.15 4-φ5.5 2 ±0.1 2 ±0.3 6 ±0.15 P 20 10 74 ±1 88 ±0.3 20 B N V U 0.5 17 W 0.5 24 26 26 19-□0.5 2-φ2.5 9 +0.6 3 1 -0.3


    Original     		PDF MS6M0678 H04-004-03 h a 431 transistor 431w transistor fuji 3 kV IGBT hcpl 322 ic or 4071 datasheet P621 P621 capacitor fuji ipm fuji electric ipm ipm application note fuji

    6MBP100RTB060

    Abstract: AC200V AC2500 HCPL4504 P610 P611 IPM DC fuji ipm 6mbp100
    Text: a １．Package Outline Drawings Package type : P611 1 0 9 ±1 9 5 ±0.3 1 3 . 8 ±0.3 67.4 1 0 . 1 6 ±0.2 1 0 . 1 6±0.2 1 0 . 1 6±0.2 1 5 . 2 4 ±0.25 3 . 2 2 ±0.3 2 ±0.3 5 . 0 8±0.15 5 . 0 8±0.15 5 . 0 8±0.15 1 4 7 4-φ 5 . 5 2 . 5 4 ±0.1 10 16


    Original     		PDF MS6M0656 H04-004-03 6MBP100RTB060 AC200V AC2500 HCPL4504 P610 P611 IPM DC fuji ipm 6mbp100

    P621

    Abstract: 431w transistor P621 capacitor 431W p621 b 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan.29 ‘ 03 N.Matsuda Jan.29 ‘ 03 Nishiura Jan. 29‘ 03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date


    Original     		PDF 6MBP150RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 431w transistor P621 capacitor 431W p621 b 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610

    heds 5310 encoder

    Abstract: heds 5310 Quadrature Encoder 333 cpr COLOR tv tube charger circuit diagrams heds 5300 encoder encoder heds 6310 schematic diagram igbt inverter welding machine HP HEDS 5300 AFBR-5715 ACPL-C87
    Text: Product Catalog 2014 Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect What’s Inside 4 Fiber Optic Solutions for Networking 14 Optical Components for Broadband Networking and Communication Applications 8 1 Industrial Fiber Optic Components,


    Original     		PDF AV00-0265EN heds 5310 encoder heds 5310 Quadrature Encoder 333 cpr COLOR tv tube charger circuit diagrams heds 5300 encoder encoder heds 6310 schematic diagram igbt inverter welding machine HP HEDS 5300 AFBR-5715 ACPL-C87