14Q7
Abstract: No abstract text available
Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access
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K3P4C1000D-D
/512Kx16)
100ns
K3P4C1000D-DC
42-DIP-600
K3P4C1000D-GC
44-SOP-600
K3P4C1000DD
14Q7
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MASK ROM 32M PROGRAM
Abstract: K3N6C4000E-DC mask rom A2034
Text: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)
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K3N6C4000E-DC
32M-Bit
2Mx16)
152x16
100ns
120ns
100pF
42-DIP-600
K3N6C4000E-DC
MASK ROM 32M PROGRAM
mask rom
A2034
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Untitled
Abstract: No abstract text available
Text: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF
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1000E-D
16M-Bit
/1Mx16)
100ns
120ns
100pF
1000E-DC
42-DIP-600
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A94-10
Abstract: 4000E
Text: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V
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4000E-DC
32M-Bit
2Mx16)
152x16
100ns
120ns
100pF
A94-10
4000E
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Untitled
Abstract: No abstract text available
Text: K3P5C1000D-D G C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access
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K3P5C1000D-D
16M-Bit
/1Mx16)
100ns
150mA
K3P5C1000D-DC
42-DIP-600
K3P5C1000D-GC
44-SOP-600
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Untitled
Abstract: No abstract text available
Text: KM23C16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access
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KM23C16005D
16M-Bit
/1Mx16)
100ns
150mA
KM23C16000D
42-DIP-600
KM23C16005DG
44-SOP-600
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Untitled
Abstract: No abstract text available
Text: K3N4V U 1000D-D(G)C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)
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1000D-D
/512Kx16)
100ns
120ns
1000D-DC
42-DIP-600
1000D-GC
44-SOP-600
42-DIP-600
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Untitled
Abstract: No abstract text available
Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)
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KM23V8105D
/512Kx16)
100/30ns
120/40ns
KM23V8105D
42-DIP-600
KM23V8105DG
44-SOP-600
42-DIP-600)
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS MASK ROM KM23V16000D G 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V16000D
16M-Bit
/1Mx16)
100ns
KM23V16000D
42-DIP-600
KM23V16000DG
44-SOP-600
576x16
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km23c8105
Abstract: km23c8105dg
Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access
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KM23C8105D
/512Kx16)
100ns
KM23C8105D
42-DIP-600
KM23C8105DG
44-SOP-600
200MAX
km23c8105
km23c8105dg
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Q321
Abstract: km23c160
Text: Preliminary CMOS MASK ROM KM23C16000D G 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) • Supply voltage : single +5V
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KM23C16000D
16M-Bit
/1Mx16)
100ns
KM23C16000D
42-DIP-600
KM23C16000DG
44-SOP-600
Q321
km23c160
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KM23C32120C-10
Abstract: KM23C32120C-12 KM23C32120C-15
Text: KM23C32120C CMOS MASK ROM 32M-Bit 4Mx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 4,194,304 x 8 bit organization Fast access time : 100ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50 µA(Max.)
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KM23C32120C
32M-Bit
100ns
42-DIP-600
KM23C32120C
200MAX
KM23C32120C-10
KM23C32120C-12
KM23C32120C-15
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44-sop
Abstract: No abstract text available
Text: KM23C16000D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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KM23C16000D
16M-Bit
/1Mx16)
100ns
KM23C16000D
42-DIP-600
KM23C16000DG
44-SOP-600
200MAX
44-sop
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Untitled
Abstract: No abstract text available
Text: K3N6C4000C-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
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K3N6C4000C-DC
32M-Bit
2Mx16)
152x16
100ns
42-DIP-600
K3N6C4000C-DC
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Untitled
Abstract: No abstract text available
Text: K3P5V U 1000D-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access
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1000D-D
16M-Bit
/1Mx16)
100ns
1000D-DC
42-DIP-600
1000D-GC
44-SOP-600
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Untitled
Abstract: No abstract text available
Text: K3N5V U 1000D-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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1000D-D
16M-Bit
/1Mx16)
100ns
1000D-DC
42-DIP-600
1000D-GC
44-SOP-600
576x16
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Untitled
Abstract: No abstract text available
Text: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.
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KM23C32000A
32M-Bit
KM23C32000A
152x16bit
42-DIP
16bit
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23c64000
Abstract: 64M-BIT ROM 2710
Text: CMOS MASK ROM KM23C64000 64M-Bit 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C64000 is a fully static mask program m able ROM • • • • 4,194,304 x 16 bit organization Fast access tim e : 120ns(Max.) Supply voltage : single +5V
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KM23C64000
64M-Bit
4Mx16)
120ns
23C64000
42-DIP-600
23C64000
42-DIP-600)
64M-BIT
ROM 2710
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23C8100DG
Abstract: No abstract text available
Text: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption
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KM23C8100D
512Kx16)
100ns
KM23C8100D
42-DIP-600
23C8100DG
44-SQP-600
23C8100D
KM23C81
42-DIP-600)
23C8100DG
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Untitled
Abstract: No abstract text available
Text: KM23C32120C CMOS MASK ROM 32M-Bit (4Mx8 CM OS M ASK ROM FEATURES G E N E R A L DESC R IPT IO N • • • • The KM23C32120C is a lully static mask programmable R O M organized 4,194,304 x 8 bit. It is fabricated using slllcon-gate C M O S process technology.
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KM23C32120C
32M-Bit
100ns
42-DIP-600
KM23C32120C
100pF
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A18T
Abstract: 23V8100DG
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V8100D
512Kx16)
100ns
120ns
KM23V8100D
42-DIP-600
23V8100DG
44-SQ
P-600
23V8100D
A18T
23V8100DG
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Untitled
Abstract: No abstract text available
Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns{Max.) Page Access : 30ns{Max.) • 4 Words / 8 bytes page access
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KM23C8105D
/512Kx16)
100ns
KM23C8105D
42-DIP-600
KM23C8105DG
44-SOP-6M
KM23C81050
KM23C
KM23C81QSD
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS MASK ROM KM23C32000C 32M-Bit 2Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 12,097,152x16 bit organization 1 Fast access time : 100ns(Max.) 1Supply voltage : single +5V 1Current consumption Operating : 50mA(Max.) Standby : 50|^A(Max.)
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KM23C32000C
32M-Bit
2Mx16)
152x16
100ns
42-DIP-600
KM23C32000C
KM23C32000C-12
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Untitled
Abstract: No abstract text available
Text: K M 2 3 C 8 10 5 B G CMOS Mask ROM ELECTRONICS 8M-Bit (1M X 8/512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time Random Access: 100ns(max.) Page Access
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8/512K
100ns
KM23C8105B
42-DIP-600
KM23C8105BG
44-SOP-600
KM23C8105B
KM23C8105B)
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