3n08
Abstract: 3N08 WW
Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses
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NTMD3N08LR2
NTMD3N08LR2
0E-05
0E-04
0E-03
0E-02
0E-01
3n08
3N08 WW
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3n08
Abstract: No abstract text available
Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses
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NTMD3N08LR2
NTMD3N08LR2/D
3n08
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3n08
Abstract: Catalytic Converter AN569 NTMD3N08LR2 NTMD3N08LR2G
Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses
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NTMD3N08LR2
NTMD3N08LR2/D
3n08
Catalytic Converter
AN569
NTMD3N08LR2
NTMD3N08LR2G
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3N08
Abstract: NTMD3N08LR2G AN569 NTMD3N08LR2 NTMD3N08LR2-D 3N08 WW
Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package http://onsemi.com Features •ăUltra Low On-Resistance Provides Higher Efficiency = 0.215 W, VGS = 10 V ♦ăRDS on = 0.245 W, VGS = 5.0 V •ăLow Reverse Recovery Losses
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NTMD3N08LR2
NTMD3N08LR2/D
3N08
NTMD3N08LR2G
AN569
NTMD3N08LR2
NTMD3N08LR2-D
3N08 WW
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3n08
Abstract: NTMD3N08LR2G AN569 NTMD3N08LR2
Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses
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NTMD3N08LR2
NTMD3N08LR2/D
3n08
NTMD3N08LR2G
AN569
NTMD3N08LR2
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3n08
Abstract: AN569 NTMD3N08LR2 3N08 WW
Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses
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PDF
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NTMD3N08LR2
NTMD3N08LR2/D
3n08
AN569
NTMD3N08LR2
3N08 WW
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3n08
Abstract: NTMD3N08LR2 AN569 SMD310
Text: NTMD3N08LR2 Advance Information Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package http://onsemi.com Features • Ultra Low On–Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V
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NTMD3N08LR2
r14525
NTMD3N08LR2/D
3n08
NTMD3N08LR2
AN569
SMD310
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3N08
Abstract: AN569 NTMD3N08LR2 SMD310
Text: NTMD3N08LR2 Advance Information Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package http://onsemi.com Features • Ultra Low On–Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V
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NTMD3N08LR2
r14525
NTMD3N08LR2/D
3N08
AN569
NTMD3N08LR2
SMD310
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3n08
Abstract: No abstract text available
Text: NTMD3N08LR2 Advance Information Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package http://onsemi.com Features • Ultra Low On–Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V
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Original
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PDF
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NTMD3N08LR2
r14525
NTMD3N08LR2/D
3n08
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