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    317 MOSFET Search Results

    317 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    317 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12vdc motor forward reverse control diagram

    Abstract: LT710 three phase on line ups circuit diagrams bldc motor control circuit diagrams 700BDC IM700 711ADC wiper motor 12v dc 5k trimpot 710A series
    Text: 710A CONTROL SERIES LT710A CONTROLS Instruction Manual Low Voltage DC Brushless Control P.O. Box 10 5000 W. 106th Street Zionsville, Indiana 46077 Phone 317 873-5211 Fax (317) 873-1105 www.dartcontrols.com A-5-3265B TABLE OF CONTENTS WARRANTY . 1


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    PDF LT710A 106th -5-3265B ISO9001 12vdc motor forward reverse control diagram LT710 three phase on line ups circuit diagrams bldc motor control circuit diagrams 700BDC IM700 711ADC wiper motor 12v dc 5k trimpot 710A series

    SHD217302

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


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    PDF SHD217302A IRF130 SHD217302A SHD217302

    IRF130

    Abstract: SHD217302A
    Text: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, 0.16 Ohm, 14A MOSFET • Fast Switching • Low RDS on • Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.


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    PDF SHD217302A IRF130 SHD217302A

    IRF130

    Abstract: N Channel Mosfet 12W SHD217302A SHD217302
    Text: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.


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    PDF SHD217302A IRF130 N Channel Mosfet 12W SHD217302A SHD217302

    317 MOSFET

    Abstract: starter/generator D-68623
    Text: FMM 200-004PL Advanced Technical Information ID25 = 200 A VDSS = 40 V Ω RDSon = 2.8 mΩ Trench Power MOSFET logic level gate control -Phaseleg Topologyin ISOPLUS i4-PACTM 3 T1 5 4 1 T2 1 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings


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    PDF 200-004PL 317 MOSFET starter/generator D-68623

    317 MOSFET

    Abstract: Control of Starter-generator starter/generator D-68623 Power MOSFET 30 A, 60 V, Logic Level POWER MOSFET Logic Level logic level low rdson
    Text: FMM 140-004PL Advanced Technical Information ID25 = 140 A VDSS = 40 V Ω RDSon = 4.0 mΩ Trench Power MOSFET logic level gate control -Phaseleg Topologyin ISOPLUS i4-PACTM 3 T1 5 4 1 T2 1 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings


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    PDF 140-004PL 317 MOSFET Control of Starter-generator starter/generator D-68623 Power MOSFET 30 A, 60 V, Logic Level POWER MOSFET Logic Level logic level low rdson

    9565A

    Abstract: solar battery charger circuit D-68623 317 MOSFET
    Text: FDM 100-0045SP Advanced Technical Information ID25 = 100 A VDSS = 55 V Ω RDSon = 5.7 mΩ Chopper with Trench Power MOSFET and Schottky Diode in ISOPLUS i4-PACTM 3 5 4 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90


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    PDF 100-0045SP 9565A solar battery charger circuit D-68623 317 MOSFET

    317 6 terminal diode

    Abstract: No abstract text available
    Text: APTM20DUM05 Dual common source MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features • • • • S D2 Benefits


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    PDF APTM20DUM05 50/60Hz 317 6 terminal diode

    300A mosfet circuit

    Abstract: No abstract text available
    Text: APTM20AM05F Phase leg MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features • • • VBUS


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    PDF APTM20AM05F 50/60Hz APTM20AM05F­ 300A mosfet circuit

    1N5817

    Abstract: ITS220 MAX731 MAX731CPA MAX731EVKIT-DIP MAXC001 PCH-27-223
    Text: 19-0034; Rev 0; 5/92 MAX731 Evaluation Kit _Features ♦ Load Currents Guaranteed to 200mA with No External MOSFET ♦ Step-Up from a 2.0V Input ♦ 170kHz High-Frequency Current-Mode PWM ♦ 82% to 87% Typical Efficiencies at Full Load


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    PDF MAX731 200mA 170kHz MAX731EVKIT-DIP MAX731CPA MAXC001 1N5817 ITS220 MAX731CPA MAX731EVKIT-DIP MAXC001 PCH-27-223

    Coilcraft Taiwan

    Abstract: max731
    Text: 19-0034; Rev 0; 5/92 MAX731 Evaluation Kit _Features ♦ Load Currents Guaranteed to 200mA with No External MOSFET ♦ Step-Up from a 2.0V Input ♦ 170kHz High-Frequency Current-Mode PWM ♦ 82% to 87% Typical Efficiencies at Full Load


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    PDF MAX731 MAX731 200mA. Coilcraft Taiwan

    APT0502

    Abstract: APT0601 APTM20DUM05G
    Text: APTM20DUM05G Dual common source MOSFET Power Module D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q1 VDSS = 200V RDSon = 5mΩ typ @ Tj = 25°C ID = 317A @ Tc = 25°C Q2 G1 G2 S1 S2 S G1 D1 S D2 Features


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    PDF APTM20DUM05G APT0502 APT0601 APTM20DUM05G

    APTM20DUM05

    Abstract: No abstract text available
    Text: APTM20DUM05 Dual common source MOSFET Power Module VDSS = 200V RDSon = 5mW max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies G1 D1 S D2 S1 Features · Power MOS 7 MOSFETs


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    PDF APTM20DUM05 APTM20DUM05

    APTM20AM05F

    Abstract: No abstract text available
    Text: APTM20AM05F Phase leg MOSFET Power Module VDSS = 200V RDSon = 5mW max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · · · G1 VBUS 0/VBUS


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    PDF APTM20AM05F APTM20AM05F­ APTM20AM05F

    k2500 mosfet

    Abstract: k2004 transistor K2500 k2500 mosfet transistor core k2004 FERRITE TOROIDAL CORE DATA ringkern 15 15 15 Si-Power smps mosfet k2500 Kaschke K2004
    Text: Diese Vorlage ist als unverbindlicher Warenkatalog herausgegeben. Nachdruck - auch auszugsweise - ist nur mit unserer ausdrücklichen Zustimmung gestattet. Wir bitten um Verständnis, daß wir mit der Veröffentlichung von Bauteilen, Anwendungen und Verfahren in diesem Katalog keine Garantie dafür übernehmen können, daß diese frei von Rechten


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    PDF K2004 k2500 mosfet k2004 transistor K2500 k2500 mosfet transistor core k2004 FERRITE TOROIDAL CORE DATA ringkern 15 15 15 Si-Power smps mosfet k2500 Kaschke K2004

    pmf 5000

    Abstract: PMF5318 5318T PMF5318-TS 60uS
    Text: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Henrik (MPM/BY/P) Sundh Approved PMF 5000[Krister seriesLundberg] MPM/BY/M 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146317


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    PDF 643Technical 00152-EN/LZT146317 JESD22-B104-B JESD22-B103-B J-STD-020C pmf 5000 PMF5318 5318T PMF5318-TS 60uS

    SMD r1b

    Abstract: output 5V 3.3V D5000 PMF5318TSR 5318T PMF5318-TS
    Text: E EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION Prepared also subject responsible if other 1/1301 00152-EN/LZT146317 BMR 643Technical 5 Uen Specification MPM/BY/P Henrik Sundh Henrik (MPM/BY/P) Sundh Approved PMF 5000[Krister


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    PDF 643Technical 00152-EN/LZT146317 JESD22-B104-B JESD22-B103-B J-STD-020C SMD r1b output 5V 3.3V D5000 PMF5318TSR 5318T PMF5318-TS

    317 MOSFET

    Abstract: automatic change over relays circuit diagram relay omron 5 pin ultrasonic cleaning driving circuit circuit diagram of touch sensitive alarm omron reed relay 750H ST-100S circuit of touch sensitive alarm
    Text: Omron A5 Catalogue 2007 283-418 11/9/06 10:56 am Page 316 Technical Information – MOSFET Relays Text • Introduction New models and a wider range provide an array of solutions, meeting the needs of today’s high performance applications. Our new range of MOSFET relays, Type G3VM, set the benchmark


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    5318T

    Abstract: No abstract text available
    Text: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Henrik (MPM/BY/P) Sundh Approved PMF 5000[Krister seriesLundberg] MPM/BY/M 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146317


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    PDF 00152-EN/LZT146317 643Technical JESD22-A103-B JESD22-B105-C JESD22-A101-B JESD22-B104-B JESD22-B103-B JESD22-B103-B 5318T

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N80E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    PDF MTP1N80E O-220

    Untitled

    Abstract: No abstract text available
    Text: International H i Rectifier HEXFET Power MOSFET 4 Ô S 5 4 5 2 Ü Ü 1 4 Ô B 4 317 I PD-9.914 INR IRF9510S INTERNATIONAL RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature


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    PDF IRF9510S SMD-220 S5452

    Untitled

    Abstract: No abstract text available
    Text: l4 flS S l4S2 International H »] Rectifier 317 « IN R PD-9.641A IRFI820G HEXFET P ow er M O S F E T • • • • • D O lS lb b IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage Isolation^ 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm


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    PDF IRFI820G

    SSP6N60

    Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
    Text: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125


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    PDF SSP4N55 SSP6N55 SSP7N55 SSP4N60 SSP6N60 SSP7N60 SSP3N70 SSP4N70 SSP5N70 SSP3N80 IRF9511 IRF9Z34 ssp5n80 IRF9521 IRF9631

    SIT Static Induction Transistor

    Abstract: Static Induction Transistor Static Induction Transistor SIT "static induction transistor"
    Text: AQV234 PhotoMOS RELAYS HS High Sensitivity Type 1-Channel (Forni A) Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT (Static Induction Transistor) allows control


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    PDF AQV234 E43149 LR26550 SIT Static Induction Transistor Static Induction Transistor Static Induction Transistor SIT "static induction transistor"