2SK193 Search Results

2SK193 Result Highlights (3)

Part	Manufacturer	Description
2SK1934-E	Renesas Electronics Corporation	Silicon N Channel MOSFET, TO-3P, /Tube
2SK1933-E	Renesas Electronics Corporation	Silicon N Channel MOSFET
2SK193-A	Renesas Electronics Corporation	Switching N-Channel Power Mosfet

2SK193 Price and Stock

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Fuji Electric Co Ltd 2SK1936-01
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1936-01		300			1 $5.415 10 $5.415 100 $3.3393 1000 $2.9783 10000 $2.9783	Buy Now
FUJITSU Limited 2SK1937
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1937		137			1 $10.26 10 $10.26 100 $6.327 1000 $6.327 10000 $6.327	Buy Now
Toshiba America Electronic Components 2SK1930 SILICON N-CHANNEL MOS TYPE (PI-MOSII5) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 4A I(D), 1000V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK1930		990			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK193 Datasheets (52)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK193	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK193	NEC	Small Signal FET(Junction type) FM tuner	Original	PDF
2SK193	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK193	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK193	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK193	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SK193	Unknown	FET Data Book	Scan	PDF
2SK1930	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
2SK1930	Toshiba	N-Channel MOSFET	Original	PDF
2SK1930	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK1930	Toshiba		Original	PDF
2SK1930	Toshiba	Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications	Scan	PDF
2SK1930	Toshiba	FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (pi-MOSII.5)	Scan	PDF
2SK1930(2-10S1B)	Toshiba	2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power	Original	PDF

2SK1930(2-10S2B)	Toshiba	2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, FET General Purpose Power	Original	PDF
2SK1930TE24L	Toshiba	2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	Original	PDF
2SK1930(TE24L,Q)	Toshiba	2SK1930 - MOSFET N-CH 1000V 4A TO-220	Original	PDF
2SK1930TE24R	Toshiba	2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	Original	PDF
2SK1930(TO-220FL)	Toshiba	2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power	Original	PDF
2SK1930(TO-220SM)	Toshiba	2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power	Original	PDF

2SK193 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK1936-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators	Original	PDF	2SK1936-01
k1930 Abstract: 2SK1930 Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	PDF	2SK1930 k1930 2SK1930
2SK1938 Abstract: No abstract text available Text: 2SK1938-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 Applications 5.45 ±0.2 5.45 ±0.2 Switching regulators UPS DC-DC converters General purpose power amplifier ±0.3 3.2 +0.3 ±0.3	Original	PDF	2SK1938-01R 2SK1938
Hitachi DSA002749 Abstract: No abstract text available Text: 2SK1933 Silicon N-Channel MOS FET Nov. 1, 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange	Original	PDF	2SK1933 D-85622 Hitachi DSA002749
2SK1937-01 Abstract: No abstract text available Text: 2SK1937-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators	Original	PDF	2SK1937-01 SC-65 2SK1937-01
k1930 Abstract: 2SK1930 Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	PDF	2SK1930 k1930 2SK1930
HX 830 Abstract: 2SK1933 Hitachi DSA00398 Text: 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange 3. Source 2SK1933	Original	PDF	2SK1933 HX 830 2SK1933 Hitachi DSA00398
2SK1931 Abstract: No abstract text available Text: SHINDENGEN VR Series Power MOSFET 2SK1931 N-Channel Enhancement type OUTLINE DIMENSIONS F5E20 Case : E-pack (Unit : mm) 200V 5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters	Original	PDF	2SK1931 F5E20 2-24V 100ms 2SK1931
2SK1931 Abstract: No abstract text available Text: SHINDENGEN VR Series Power MOSFET 2SK1931 F5E20 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 200V 5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters	Original	PDF	2SK1931 F5E20 2-24V 100ms 2SK1931
2SK1934 Abstract: No abstract text available Text: 2SK1934 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator 2 1 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings Ta = 25°C	Original	PDF	2SK1934 2SK1934
2SK1937-01 equivalent Abstract: 2SK1937 Text: 2SK1937-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,48Ω 15A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators	Original	PDF	2SK1937-01 2SK1937-01 equivalent 2SK1937
2SK1934 Abstract: Hitachi DSA00395 Text: 2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange 3. Source	Original	PDF	2SK1934 2SK1934 Hitachi DSA00395
2SK1930 Abstract: No abstract text available Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	PDF	2SK1930 2SK1930
2SK1930 Abstract: No abstract text available Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	PDF	2SK1930 2SK1930

2SK1934 Abstract: No abstract text available Text: 2SK1934 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Outline 2SK1934 Absolute Maximum Ratings Ta = 25 °C	OCR Scan	PDF	2SK1934 2SK1934
A2272 Abstract: No abstract text available Text: 2SK1936-01 FUJI P O W E R M O S - F E T N CHANNEL SILICON POWER IVIOS-FET F A P -IIA SERIES • Features Outline Drawings • High speed switching • -ow on-resistance • Mo secondary breakdown • .ow driving power • High voltage • ycs= ± 30V Guarantee	OCR Scan	PDF	2SK1936-01 A2272
2SK1939 Abstract: 2SK1939-01 SC-65 T151 A2281 Text: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance 03,2±O.l 45*0-2 • No secondary breakdown • Low driving power • High voltage Gate • V GS-=t30V Guarantee	OCR Scan	PDF	2SK1939-01 SC-65 2SK1939 2SK1939-01 SC-65 T151 A2281
Untitled Abstract: No abstract text available Text: 2SK1934 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • L ow o n -resistance • H igh speed sw itching • No secondary breakdow n • Suitable for Sw itching regulator Outline 1. Gate 2. Drain Flange 3. Source 700	OCR Scan	PDF	2SK1934
2SK2829 Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151 Text: POWER MOS FET •General switching 23 133» o 12 o CO \| 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586	OCR Scan	PDF	2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151
2SK1395 Abstract: 2sk2006 2SK1539 2SK1685 Text: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695	OCR Scan	PDF	2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 2SK1391 2SK1392 2SK1395 2SK1539 2SK1685
2SK1930 Abstract: No abstract text available Text: T O S H IB A 2SK1930 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S II 5 2 S K 1 930 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE	OCR Scan	PDF	2SK1930 to-22qfl 2SK1930
2SK1933 Abstract: K1933 Text: 2SK1933 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching N o secondary breakdown Suitable for Switching regulator Outline ‘i TO- G o1. Gate 2. Drain Flange 3. Source	OCR Scan	PDF	2SK1933 2SK1933 K1933
2SK1930 Abstract: No abstract text available Text: 2SK1930 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II 5 2 S K 1 930 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS	OCR Scan	PDF	2SK1930 O-22QFL 2SK1930
2SK193 Abstract: transistor 2sk193 2sK193 transistor Text: NEC N-CHANNEL JUNCTIO N FIELD-EFFECT TRANSISTOR ELECTRON DEVICE D ES C R IP T IO N 2SK193 T h e 2 S K 1 9 3 is designed fo r use in FM tu n e r o f a p o ta b le ra d io P A C K A G E D IM EN SIO N S receiver. in m illim ete rs FEA TU RES • H igh lyfslt	OCR Scan	PDF	2SK193 2SK193 transistor 2sk193 2sK193 transistor

2SK193 Search Results

2SK193 Result Highlights (3)

2SK193 Price and Stock

Fuji Electric Co Ltd 2SK1936-01

FUJITSU Limited 2SK1937

Toshiba America Electronic Components 2SK1930

2SK193 Datasheets (52)

2SK193 Datasheets Context Search

Untitled

k1930

2SK1938

Hitachi DSA002749

2SK1937-01

k1930

HX 830

2SK1931

2SK1931

2SK1934

2SK1937-01 equivalent

2SK1934

2SK1930

2SK1930

2SK1934

A2272

2SK1939

Untitled

2SK2829

2SK1395

2SK1930

2SK1933

2SK1930

2SK193