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Rochester Electronics LLC 2SJ263 POWER MOSFET FOR MOTOR DRIVERS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ263	Bulk			275	1 - 10 - 100 - 1000 $1.09 10000 $1.09	Buy Now
Rochester Electronics LLC 2SJ266-DL-E PCH 4V DRIVE SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ266-DL-E	Bulk			365	1 - 10 - 100 - 1000 $0.82 10000 $0.82	Buy Now
Aptina Imaging 2SJ263 Trans MOSFET P-CH 60V 6A 3-Pin(3+Tab) TO-220ML
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ263		6,780		304	1 - 10 - 100 - 1000 $1.1156 10000 $1.1156	Buy Now
Aptina Imaging 2SJ266-DL-E Trans MOSFET P-CH 60V 8A 3-Pin(2+Tab) SMP-FD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SJ266-DL-E		6,000		404	1 - 10 - 100 - 1000 $0.8403 10000 $0.8403	Buy Now
onsemi 2SJ266-DL-E 2SJ266 - P-Channel 4V DRIVE SERIES '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SJ266-DL-E		6,000		1	1 $0.7908 10 $0.7908 100 $0.7434 1000 $0.6722 10000 $0.6722	Buy Now

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2SJ26 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ260	Sanyo Semiconductor	Ultra High Speed Switching MOSFET	Scan	PDF
2SJ260	Sanyo Semiconductor	Large Signal Power MOSFET	Scan	PDF
2SJ261	Sanyo Semiconductor	Ultra High Speed Switching MOSFET	Scan	PDF
2SJ261	Sanyo Semiconductor		Scan	PDF
2SJ261	Sanyo Semiconductor	Large Signal Power MOSFET	Scan	PDF
2SJ262	Sanyo Semiconductor	Ultra High Speed Switching MOSFET	Scan	PDF
2SJ262	Sanyo Semiconductor	Large Signal Power MOSFET	Scan	PDF
2SJ263	Sanyo Semiconductor	P-Channel Silicon MOSFET	Original	PDF
2SJ263	Sanyo Semiconductor	TO-220ML, TO-220MF Type Transistors	Scan	PDF
2SJ263	Sanyo Semiconductor	Ultra High Speed Switching MOSFETS	Scan	PDF
2SJ263	Sanyo Semiconductor	Large Signal Power MOSFET	Scan	PDF
2SJ264	Sanyo Semiconductor	P-Channel Silicon MOSFET	Original	PDF
2SJ264	Unknown		Scan	PDF
2SJ264	Sanyo Semiconductor	Ultra High Speed Switching MOSFETS	Scan	PDF

2SJ264	Sanyo Semiconductor	Large Signal Power MOSFET	Scan	PDF
2SJ265	Sanyo Semiconductor	P-Channel Silicon MOSFET Ultrahigh-Speed Switching	Original	PDF
2SJ265	Unknown		Scan	PDF
2SJ265	Sanyo Semiconductor	TO-220ML, TO-220MF Type Transistors	Scan	PDF
2SJ265	Sanyo Semiconductor	Ultra High Speed Switching MOSFETS	Scan	PDF
2SJ265	Sanyo Semiconductor	Large Signal Power MOSFET	Scan	PDF

2SJ26 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EN4746 Abstract: 2SJ264 Text: Ordering number:EN4746 P-Channel Silicon MOSFET 2SJ264 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A	Original	PDF	EN4746 2SJ264 2SJ264] O-220ML EN4746 2SJ264
2SJ266 Abstract: ITR00258 ITR00259 ITR00260 ITR00261 ITR00262 IT00265 Text: 注文コード No.N 4 2 3 6 2SJ266 No. 4 2 3 6 三洋半導体ニューズ 52099 新 2SJ266 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング・低オン抵抗。・超高速スイッチング。・低電圧駆動。	Original	PDF	2SJ266 IT00264 IT00265 ITR00262 IT00266 IT00267 2SJ266 ITR00258 ITR00259 ITR00260 ITR00261 ITR00262 IT00265
2SJ263 Abstract: ITR00228 ITR00229 ITR00230 ITR00231 Text: 注文コード No.N 4 2 3 4 2SJ263 三洋半導体ニューズ No. 4 2 3 4 52099 新 2SJ263 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング・低オン抵抗。・超高速スイッチング。・低電圧駆動。	Original	PDF	2SJ263 --30V --10V ITR00234 ITR00235 ITR00236 ITR00237 2SJ263 ITR00228 ITR00229 ITR00230 ITR00231
EN4234 Abstract: 2SJ263 Text: Ordering number:EN4234 P-Channel Silicon MOSFET 2SJ263 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ263]	Original	PDF	EN4234 2SJ263 2SJ263] O-220ML EN4234 2SJ263
2SJ265 Abstract: No abstract text available Text: Ordering number:EN4235 P-Channel Silicon MOSFET 2SJ265 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ265]	Original	PDF	EN4235 2SJ265 2SJ265] O-220ML 2SJ265
bx 18A Abstract: 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282 Text: 注文コード No.N 4 2 3 7 2SJ268 No. 4 2 3 7 三洋半導体ニューズ 61599 新 2SJ268 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング・低オン抵抗。・超高速スイッチング。・低電圧駆動。	Original	PDF	2SJ268 IT00284 --30V --10V ITR00282 IT00285 IT00286 IT00287 bx 18A 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282
2SJ265 Abstract: ITR00248 ITR00249 ITR00250 ITR00251 Text: 注文コード No.N 4 2 3 5 2SJ265 No. 4 2 3 5 52099 新 2SJ265 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング・低オン抵抗。・超高速スイッチング。・低電圧駆動。・マイカレスパッケージで取り付け作業性が良い。	Original	PDF	2SJ265 --30V --10V ITR00254 ITR00255 ITR00256 ITR00257 2SJ265 ITR00248 ITR00249 ITR00250 ITR00251
2SJ268 Abstract: No abstract text available Text: Ordering number:EN4237 P-Channel Silicon MOSFET 2SJ268 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ268] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.	Original	PDF	EN4237 2SJ268 2SJ268] 2SJ268-applied 2SJ268
2SJ266 Abstract: No abstract text available Text: Ordering number:EN4236 P-Channel Silicon MOSFET 2SJ266 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ266] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.	Original	PDF	EN4236 2SJ266 2SJ266] 2SJ266-applied 2SJ266
2SJ267 Abstract: ITR00268 ITR00269 ITR00270 ITR00271 ITR00272 Text: 注文コード No.N 4 7 4 7 2SJ267 No. 4 7 4 7 三洋半導体ニューズ 61599 新 2SJ267 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング用・低オン抵抗。・超高速スイッチング。・低電圧駆動。	Original	PDF	2SJ267 --10V --30V ITR00274 ITR00275 ITR00276 ITR00277 2SJ267 ITR00268 ITR00269 ITR00270 ITR00271 ITR00272
2SJ264 Abstract: ITR00238 ITR00239 ITR00240 ITR00241 2SJ26 Text: 注文コード No.N 4 7 4 6 2SJ264 No. 4 7 4 6 52099 新 2SJ264 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング・低オン抵抗。・超高速スイッチング。・低電圧駆動。・マイカレスパッケージで取り付け作業性が良い。	Original	PDF	2SJ264 --10V --30V ITR00244 ITR00245 ITR00246 ITR00247 2SJ264 ITR00238 ITR00239 ITR00240 ITR00241 2SJ26
2sj28 Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40	Original	PDF	2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2sj28 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
EN4234 Abstract: 2SJ263 Text: Ordering number:EN4234 P-Channel Silicon MOSFET 2SJ263 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ263]	Original	PDF	EN4234 2SJ263 2SJ263] O-220ML EN4234 2SJ263
EN4235 Abstract: 2SJ265 Text: Ordering number:EN4235 P-Channel Silicon MOSFET 2SJ265 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ265]	Original	PDF	EN4235 2SJ265 2SJ265] O-220ML EN4235 2SJ265

2SJ263 Abstract: EN4234 Text: Ordering num ber:E N 4 2 3 4 _ 2SJ263 P-Channel MOS Silicon FET No.4234 Very High-Speed Switching Applications i Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. Absolute Maximum Ratings atTa = 25°C	OCR Scan	PDF	EN4234 2SJ263 10/ws, 2SJ263 EN4234
2SJ267 Abstract: No abstract text available Text: Ordering number: EN4747 _ 2SJ267 N o .4747 P-C hannel M OS S ilicon FET SAXYO i Very High-Speed Switching Applications F e a tu r e s •Low ON resista n ce. - V ery high-sp eed sw itch in g. • L ow -voltage drive. - Surface m ount type d evice m aking the follow ing possible	OCR Scan	PDF	EN4747 2SJ267 2SJ267-applied 10//s,
2SJ261 Abstract: SC46 T0220AB Text: - KNo. N 5271 N o . % 5271 SAN YO 90795 2SJ261 P^-V ;H V IO SJfi'> ' □ h V > i > X9 ü£¡6 ttf t v ^ y # . •m t m su. Absolute Maximum Ratings / Ta = 25°C K 1- " { 'y - 'J —XfiïJIÎ Vugs y -h -y -x E Kl" f DC) K V 'i y ^ M (^.Jl/X) VGSS ID	OCR Scan	PDF	2SJ261 100mA 2052C T0220AB T370-05 90795YK 2SJ261 SC46
L177 E Abstract: 2SJ264 4746 diode Text: — Ordering number: EN 4746 '•»' 2SJ264 No.4746 P-Channel MOS Silicon FET SAWOi Very High-Speed Switching Applications Features ■Low ON resistance. • Very high-speed switching. ■Low-voltage drive. • Micaless package facilitating easy mounting.	OCR Scan	PDF	EN4746 2SJ264 L177 E 2SJ264 4746 diode
2SJ268 Abstract: No abstract text available Text: 2SJ268 2093 2090 LD L o w D rive Series VDss = 60V P Channel Power MOSFET 4237 Features • Low ON resistance. - Very high-speed switching. • Low-voltage drive. - Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 2SJ268-applied equipment.	OCR Scan	PDF	2SJ268 2SJ268-applied PWS10//s, 2SJ268
Untitled Abstract: No abstract text available Text: 2SJ268 2093 2090 LD L o w D riv e S e rie s V dss = 60V P Channel Power MOSFET £4237 F e a tu re s • Low ON resistance. • V ery high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ268-applied equipm ent.	OCR Scan	PDF	2SJ268 2SJ268-applied --20V
Untitled Abstract: No abstract text available Text: 2SJ265 LD L o w D rive S eries VDSs = 6 0 V 2063 P Channel Power M OSFET i_ £•4235 F e a tu re s ■Low ON resistance. ■Very high-speed switching. • Low-voltage drive. ■M icaless package facilitating m ounting. b s o lu te M ax im u m R a tin g s a t Ta = 25°C	OCR Scan	PDF	2SJ265 42893TH AX-8376
4235 Abstract: 2SJ265 Text: O rd e rin g n u m b e r: EN 4 2 3 § -, 2SJ265 No.4235 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C	OCR Scan	PDF	2SJ265 4235 2SJ265
2sj26 Abstract: No abstract text available Text: 2SJ266 2093 2090 L D { L o w D rive S e r ie s V DSs=z 6 0 V P Channel Power M OSFET f 4236 F e a tu re s • Low ON resistance. - Very high-speed switching. - Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ266-applied equipm ent.	OCR Scan	PDF	2SJ266 2SJ266-applied --20V 2sj26
Untitled Abstract: No abstract text available Text: 2SJ263 LD L o w D rive S eries V Dss:= 6 0 V 2063 P Channel Power M OSFET .£•4234 F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • M icaless package facilitating m ounting. A b so lu te M ax im u m R a tin g s a t Ta = 25°C	OCR Scan	PDF	2SJ263 42893TH AX-8376

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2SJ26 Price and Stock

Rochester Electronics LLC 2SJ263

Rochester Electronics LLC 2SJ266-DL-E

Aptina Imaging 2SJ263

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onsemi 2SJ266-DL-E

2SJ26 Datasheets (38)

2SJ26 Datasheets Context Search

EN4746

2SJ266

2SJ263

EN4234

2SJ265

bx 18A

2SJ265

2SJ268

2SJ266

2SJ267

2SJ264

2sj28

EN4234

EN4235

2SJ263

2SJ267

2SJ261

L177 E

2SJ268

Untitled

Untitled

4235

2sj26

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