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    2SD26 Search Results

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    2SD2655WM-TL-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
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    2SD26 Price and Stock

    ROHM Semiconductor 2SD2656T106

    TRANS NPN 30V 1A UMT3
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    DigiKey 2SD2656T106 Cut Tape 7,996 1
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    2SD2656T106 Reel 3,000 3,000
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    Mouser Electronics 2SD2656T106 5,110
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    RS 2SD2656T106 Bulk 40
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    TME 2SD2656T106 1
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    Ameya Holding Limited 2SD2656T106 10 1
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    Avnet Asia 2SD2656T106 24 Weeks 3,000
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    Chip1Stop 2SD2656T106 Cut Tape 3,640
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    CoreStaff Co Ltd 2SD2656T106 1,000
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    2SD2656T106 956
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    ROHM Semiconductor 2SD2696T2L

    TRANS NPN 30V 0.4A VMT3
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    DigiKey 2SD2696T2L Digi-Reel 3,194 1
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    2SD2696T2L Cut Tape 3,194 1
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    Mouser Electronics 2SD2696T2L 7,800
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    Ameya Holding Limited 2SD2696T2L 100 1
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    Chip1Stop 2SD2696T2L Cut Tape 100
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    ROHM Semiconductor 2SD2654TLV

    TRANS NPN 50V 0.15A EMT3
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    DigiKey 2SD2654TLV Cut Tape 3,085 1
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    2SD2654TLV Digi-Reel 3,085 1
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    2SD2654TLV Reel 3,000 3,000
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    Mouser Electronics 2SD2654TLV 973
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    Bristol Electronics 2SD2654TLV 2,946
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    Quest Components 2SD2654TLV 2,356
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    2SD2654TLV 2,140
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    TME 2SD2654TLV 1
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    Chip1Stop 2SD2654TLV Cut Tape 2,090
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    CoreStaff Co Ltd 2SD2654TLV 75
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    New Advantage Corporation 2SD2654TLV 2,875 1
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    ROHM Semiconductor 2SD2656FRAT106

    TRANS NPN 30V 1A UMT3
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    DigiKey 2SD2656FRAT106 Reel 2,975 3,000
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    TME 2SD2656FRAT106 1
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    Ameya Holding Limited 2SD2656FRAT106 100 1
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    Avnet Silica 2SD2656FRAT106 16 Weeks 3,000
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    ROHM Semiconductor 2SD2657TL

    TRANS NPN 30V 1.5A TSMT3
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    DigiKey 2SD2657TL Cut Tape 2,701 1
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    Mouser Electronics 2SD2657TL 3,426
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    Verical 2SD2657TL 2,908 685
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    2SD2657TL 2,630 38
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    Newark 2SD2657TL Cut Tape 1,583 5
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    Ameya Holding Limited 2SD2657TL 100 1
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    Chip1Stop 2SD2657TL Cut Tape 2,630
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    CoreStaff Co Ltd 2SD2657TL 2,908
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    2SD26 Datasheets (262)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD26 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD26 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD26 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD26 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD26 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD26 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD26 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SD26 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD26 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD26 Unknown Cross Reference Datasheet Scan PDF
    2SD26 Unknown Transistor Replacements Scan PDF
    2SD260 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD260 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD260 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD260 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD260 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD260 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD260 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD260 Unknown Cross Reference Datasheet Scan PDF
    2SD2600 Sanyo Semiconductor Original PDF
    ...

    2SD26 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking z04

    Abstract: 2SB1706 2SD2671 tsmt5 "marking code" Z04
    Text: QSZ4 Transistors General purpose transistor isolated transistor and diode QSZ4 A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package. zDimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ4 (5) (4) zFeatures 1) Low VCE(sat)


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    PDF 2SB1706 2SD2671 marking z04 tsmt5 "marking code" Z04

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2621G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) 2SD2621G

    2SD2634

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD2634 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output PINNING


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    PDF 2SD2634 2SD2634

    FML10

    Abstract: RB461F 2SD2652
    Text: FML10 Transistors General purpose transistor isolated transistor and diode FML10 2SD2652 and a RB461F are housed independently in a UMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5)


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    PDF FML10 2SD2652 RB461F SC-74A FML10

    2SD2670

    Abstract: marking code z03 2SB1705
    Text: QSZ3 Transistors General purpose transistor isolated transistor and diode QSZ3 A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ3 zStructure Silicon epitaxial planar transistor


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    PDF 2SB1705 2SD2670 marking code z03

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SD2686 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


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    PDF 2SD2686

    2SD2653

    Abstract: No abstract text available
    Text: 2SD2653 Transistors Low frequency amplifier 2SD2653 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 180mV at IC = 1A / IB = 50mA 2.9 0.85 0.4 0.7 1.6 2.8 (3)


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    PDF 2SD2653 180mV 2SD2653

    2SB1676

    Abstract: 2SD2618 doide base, collector, emitter
    Text: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector


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    PDF 2SD2618 2SB1676. 100ms) 10MHz 2SB1676 2SD2618 doide base, collector, emitter

    2sd2693

    Abstract: No abstract text available
    Text: Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


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    PDF 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2SD2693A 60ndant

    2sd2693

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features


    Original
    PDF 2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2SD2693A

    2sd2693

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features


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    PDF 2002/95/EC) 2SD2693, 2SD2693A 2SB1724, 2SB1724A 2SD2693 2SD2693A

    2SD2605

    Abstract: No abstract text available
    Text: Power Transistors 2SD2605 Silicon NPN triple diffusion planar type For power amplification Unit: mm • Features 5.0±0.1 High collector to emitter VCEO Allowing supply with the radial taping M Di ain sc te on na tin nc ue e/ d TC=25˚C Symbol Ratings Unit


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    PDF 2SD2605 2SD2605

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SD2655 R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK SC–59A Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)


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    PDF 2SD2655 R07DS0281EJ0400 2SB1691 PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: QSL12 Transistors General purpose transistor isolated transistor and diode QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver QSL12 ROHM : TSMT5 (5) 0.85 (4) 0~0.1 0.3∼0.6 0.7 0.16 (3)


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    PDF QSL12 2SD2675 RB461F QSL12

    TUMT5

    Abstract: No abstract text available
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


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    PDF US5L10 2SD2674 RB461F 15Max. US5L10 85Max. TUMT5

    Untitled

    Abstract: No abstract text available
    Text: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Units : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) (1)Base (2)Collector (3)Emitter


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    PDF 2SD2661 180mV SC-62 OT-89 2SD2661

    2SD2642

    Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
    Text: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max


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    PDF 2SD2642 100max 110min 5000min 60typ 55typ O220F) 2SB1687) 2SD2642 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687

    2SD2627LS

    Abstract: 2sd2627
    Text: Ordering number : ENN6478A 2SD2627LS NPN Triple Diffused Planar Silicon Transistor 2SD2627LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6478A 2SD2627LS 2079D 2SD2627] O-220FI 2SD2627LS 2sd2627

    2sd2658

    Abstract: 2SD2658LS 13002 13002 TRANSISTOR transistor 13002 k 3531 transistor
    Text: Ordering number : ENN7168 2SD2658LS NPN Triple Diffused Planar Silicon Transistor 2SD2658LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).


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    PDF ENN7168 2SD2658LS 2079D 2SD2658LS] O-220FI 2sd2658 2SD2658LS 13002 13002 TRANSISTOR transistor 13002 k 3531 transistor

    13001 TRANSISTOR sw

    Abstract: 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply
    Text: Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6897A 2SD2645 2SD2645] 13001 TRANSISTOR sw 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply

    Untitled

    Abstract: No abstract text available
    Text: 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor 50V, 0.15A 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S !External dimensions (Units : mm) !Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage.


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    PDF 2SD2654 2SD2351 2SD2226K 2SD2227S 50mA/5mA) 2SD2654

    1225 transistor 09 d

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)


    OCR Scan
    PDF 2SD2604 1225 transistor 09 d

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN6922 | _ NPN Triple Diffused Planar Silicon Transistor 2SD2646 ¡SAHYOj Color TV Horizontal Deflection Output Applications Package Dimensions Features • H igh speed. unit : mm • High breakdown voltage VCBO= 1500V .


    OCR Scan
    PDF ENN6922 2SD2646

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 . Ç&3.2 ±0.2 -j I.- 2.7±0-2


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    PDF 2SD2604 100/zs^