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Panasonic Electronic Components 2SD21330RA TRANS NPN 50V 1A MT-3
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DigiKey	2SD21330RA	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SD2137APA TRANS NPN 80V 3A MT-4
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DigiKey	2SD2137APA	Ammo Pack			1,000	1 - 10 - 100 - 1000 $0.47287 10000 $0.41584	Buy Now
Panasonic Electronic Components 2SD2138APA TRANS NPN DARL 80V 2A MT-4
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DigiKey	2SD2138APA	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SD2138AQA TRANS NPN DARL 80V 2A MT-4
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DigiKey	2SD2138AQA	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SD21360RA TRANS NPN 60V 3A MT-3
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DigiKey	2SD21360RA	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SD213 Datasheets (127)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD213	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD213	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SD213	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD213	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SD213	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SD213	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD213	Unknown	Cross Reference Datasheet	Scan	PDF
2SD213	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SD213	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD213	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD213	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SD213	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD213	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2130	Toshiba	TRANS DARLINGTON NPN 70V 4A 3(2-8H1A)	Original	PDF

2SD2130	Toshiba	NPN Transistor	Original	PDF
2SD2130	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD2130	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2130	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2130	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2130	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

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2SD213 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A	Original	PDF	2SD2137, 2SD2137A 2SD2137
3a npn to126 transistor Abstract: 2SD2136 Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .	Original	PDF	2SD2136 2SD2136 2SD2136L-x-T60-K 2SD2136G-x-T60-K 2SD2136L-x-T6C-K 2SD2136G-x-T6C-K O-126 O-126C QW-R204-011 3a npn to126 transistor
D2131 Abstract: D-2131 2SD2131 Text: 2SD2131 東芝トランジスタシリコンNPN三重拡散形 2SD2131 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 3 V, IC = 3 A)	Original	PDF	2SD2131 SC-67 2-10R1A 20070701-JA D2131 D-2131 2SD2131
D2131 Abstract: transistor d2131 2SD2131 Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	PDF	2SD2131 D2131 transistor d2131 2SD2131
2SB1416 Abstract: 2SD2136 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)	Original	PDF	2002/95/EC) 2SD2136 2SB1416 2SB1416 2SD2136
2SD2137A Abstract: 2SB1417 2SB1417A 2SD2137 Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A	Original	PDF	2SD2137, 2SD2137A 2SB1417 2SB1417A 2SD2137 2SD2137A 2SB1417A 2SD2137
2sd2137 Abstract: No abstract text available Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 VCBO 2SD2137A Unit 60 V 2.5±0.1 0.65±0.1 0.35±0.1 1.05±0.1 VEBO V Peak collector current	Original	PDF	2SD2137, 2SD2137A 2SD2137 2sd2137
2SB1418 Abstract: 2SB1418A 2SD2138 2SD2138A Text: Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A Collector to base voltage 2SB1418 Collector to emitter voltage 2SB1418 18.0±0.5 Solder Dip Symbol	Original	PDF	2SB1418, 2SB1418A 2SD2138 2SD2138A 2SB1418 2SB1418 2SB1418A 2SD2138A
2SD2137 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60	Original	PDF	O-220 2SD2137 O-220 375mA 10MHz 2SD2137
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR NPN TO – 126 FEATURES z High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. z Low Collector-Emitter Saturation Voltage VCE(sat)	Original	PDF	O-126 2SD2136 10MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TO-220 TRANSISTOR NPN FEATURES z High forward current transfer ratio hFE which has satisfactory linearity z Low collector to emitter saturation voltage VCE(sat)	Original	PDF	O-220 2SD2137 O-220 10MHz 375mA
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit	Original	PDF	2002/95/EC) 2SD2136 2SB1416
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB1418 and 2SB1418A 4.2±0.2 Unit: mm • Absolute Maximum Ratings TC = 25°C	Original	PDF	2002/95/EC) 2SD2138, 2SD2138A 2SB1418 2SB1418A 2SD2138 2SD2138A
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A 5.0±0.1 90˚ • High forward current transfer ratio hFE	Original	PDF	2002/95/EC) 2SB1418, 2SB1418A 2SD2138 2SD2138A 2SB1418 2SB1418A

2SD2133 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low	Original	PDF	2002/95/EC) 2SD2133 2SD2133
2SB1416 Abstract: 2SD2136 Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 60 V Collector-emitter voltage (Base open)	Original	PDF	2SD2136 2SB1416 2SB1416 2SD2136
2SB1418 Abstract: 2SB1418A 2SD2138 2SD2138A Text: Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A Collector to base voltage 2SB1418 Collector to emitter voltage 2SB1418 18.0±0.5 Solder Dip Symbol	Original	PDF	2SB1418, 2SB1418A 2SD2138 2SD2138A 2SB1418 2SB1418 2SB1418A 2SD2138A
2SD2137 Abstract: No abstract text available Text: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range	Original	PDF	O-220 2SD2137 O-220 375mA 10MHz 2SD2137
Untitled Abstract: No abstract text available Text: 2SD2130 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 8.3MAX. 5.8 POWER AMPLIFIER APPLICATIONS. 0 3.1 ± 0 .1 . High DC Current Gain : hpE=2000(Min.)(VCE=2V, Ic=lA) 3:. Low Saturation Voltage	OCR Scan	PDF	2SD2130
2SD2135 Abstract: 955A ASO01 Text: Power Transistors 2S D 2135 2SD2135 Silicon NPN Epitaxial Planar Darlington Type P ackage Dim ensions AF Amplifier Unit ! mm • Features • High DC current gain h FE> • 60V Zener diode built-in betw een C and B • Automatic mounting by radial taping is possible.	OCR Scan	PDF	2SD2135 2SD2135 955A ASO01
Untitled Abstract: No abstract text available Text: Power Transistors 2SD2139 2SD2139 Silicon NPN Triple-Diffused Planar Type High DC Current Gain • Features • H igh DC c u r re n t gain ■ Package Dimensions Power Amplifier hFE , (I i f e ) • G ood lin earity of DC c u r re n t gain ( h ^ ) • A u to m atic m o u n tin g by radial tap in g is p o ssib le	OCR Scan	PDF	2SD2139
Untitled Abstract: No abstract text available Text: Power Transistors 2SB1416 2SB1416 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD2136 •Features • High DC current gain Iife and good linearity • Low collector-emitter saturation voltage (Vc e m )	OCR Scan	PDF	2SB1416 2SD2136 Glh321 52ETE00
2SB1418 Abstract: 2SB1418A 2SD2138 2SD2138A Text: Power Transistors 2SD2138, 2SD2138A 2SD2138, 2SD2138A Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1418, 2SB1418A • Features • H ig h D C c u r r e n t g a in Oife a n d g o o d lin e a r ity	OCR Scan	PDF	2SD2138, 2SD2138A 2SB1418, 2SB1418A 2SD2138 2SB1418 2SB1418A 2SD2138A
j001 Abstract: diode zenner ZL 15 2SD2131 Text: TO SH IBA 2SD2131 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 2 1 31 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, Ic = 3A)	OCR Scan	PDF	2SD2131 150mJ j001 diode zenner ZL 15 2SD2131

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2SD213 Price and Stock

Panasonic Electronic Components 2SD21330RA

Panasonic Electronic Components 2SD2137APA

Panasonic Electronic Components 2SD2138APA

Panasonic Electronic Components 2SD2138AQA

Panasonic Electronic Components 2SD21360RA

2SD213 Datasheets (127)

2SD213 Datasheets Context Search

Untitled

3a npn to126 transistor

D2131

D2131

2SB1416

2SD2137A

2sd2137

2SB1418

2SD2137

Untitled

Untitled

Untitled

Untitled

Untitled

2SD2133

2SB1416

2SB1418

2SD2137

Untitled

2SD2135

Untitled

Untitled

2SB1418

j001