2SB0942
Abstract: 2SB0942A 2SD1267 2SD1267A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc
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2002/95/EC)
2SD1267,
2SD1267A
2SB0942
2SB0942A
2SD1267
O-220F-A1
2SB0942A
2SD1267
2SD1267A
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2SB942
Abstract: 2SB942A 2SD1267 2SD1267A
Text: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to 2SD1267 Ratings
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2SD1267,
2SD1267A
2SB942
2SB942A
2SD1267
150mA
2SB942A
2SD1267
2SD1267A
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Untitled
Abstract: No abstract text available
Text: 2SD1267AP Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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2SD1267AP
Freq20MÃ
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity
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2002/95/EC)
2SB0942
2SB942)
2SB0942A
2SB942A)
2SD1267,
2SD1267A
2SB0942
2SB0942A
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SC671
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 (Emitter open)
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2002/95/EC)
2SD1267,
2SD1267A
2SB0942
2SB0942A
2SD1267
2SD1267A
SC671
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2SD1267
Abstract: 2SD1267A
Text: Inchange Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SB942/942A
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2SD1267
2SD1267A
O-220Fa
2SB942/942A
O-220Fa)
2SD1267
2SD1267A
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2SD1267A
Abstract: 2SB0942 2SB0942A 2SD1267
Text: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 and 2SB0942A Parameter Collector to base voltage 2SD1267 Collector to emitter voltage 2SD1267 Symbol Rating Unit VCBO 60 V 16.7±0.3
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2SD1267,
2SD1267A
2SB0942
2SB0942A
2SD1267
2SD1267A
2SB0942A
2SD1267
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2SB0942
Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 10.0±0.2 4.2±0.2 M Di ain sc te
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2002/95/EC)
2SB0942
2SB942)
2SB0942A
2SB942A)
2SD1267,
2SD1267A
2SB0942
2SB0942A
2SB942
2SB942A
2SD1267
2SD1267A
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2SB942
Abstract: 2SB942A 2SD1267 2SD1267A
Text: Power Transistors 2SB942, 2SB942A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB942 base voltage 2SB942A Collector to 2SB942 Ratings
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2SB942,
2SB942A
2SD1267
2SD1267A
2SB942
100mA
2SB942
2SB942A
2SD1267A
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2SD1267A
Abstract: 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267
Text: Power Transistors 2SB0942 2SB942 , 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Large collector-emitter saturation voltage VCE(sat)
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2SB0942
2SB942)
2SB0942A
2SB942A)
2SD1267,
2SD1267A
2SD1267A
2SB0942
2SB0942A
2SB942
2SB942A
2SD1267
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Untitled
Abstract: No abstract text available
Text: 2SD1267A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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2SD1267A
Freq20MÃ
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Untitled
Abstract: No abstract text available
Text: 2SD1267AQ Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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2SD1267AQ
Freq20MÃ
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A • Features 4.2±0.2 5.5±0.2
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2002/95/EC)
2SB0942
2SB942)
2SB0942A
2SB942A)
2SD1267,
2SD1267A
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2SB0942
Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
Text: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 2SB942 and 2SB0942A (2SB942A) Unit: mm • Features Parameter (TC=25˚C) Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to
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2SD1267,
2SD1267A
2SB0942
2SB942)
2SB0942A
2SB942A)
2SD1267
2SB0942
2SB0942A
2SB942
2SB942A
2SD1267
2SD1267A
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2SD1267
Abstract: 2SD1267A
Text: SavantIC Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A
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2SD1267
2SD1267A
O-220Fa
2SB942/942A
2SD1267
2SD1267A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 (Emitter open)
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Original
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PDF
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2002/95/EC)
2SD1267,
2SD1267A
2SB0942
2SB0942A
2SD1267
2SD1267A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity
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Original
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PDF
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2002/95/EC)
2SB0942
2SB942)
2SB0942A
2SB942A)
2SD1267,
2SD1267A
2SB0942
2SB0942A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 (Emitter open) 2SD1267A Unit VCBO 60
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2002/95/EC)
2SD1267,
2SD1267A
2SB0942
2SB0942A
2SD1267
2SD1267A
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2SB0942
Abstract: 2SB0942A 2SD1267 2SD1267A
Text: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 Emitter open 2SD1267A Symbol Rating Unit VCBO 60 V Collector-emitter voltage 2SD1267
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2SD1267,
2SD1267A
2SB0942
2SB0942A
2SD1267
2SB0942A
2SD1267
2SD1267A
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2SB0942
Abstract: 2SB0942A 2SD1267 2SD1267A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc
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Original
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PDF
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2002/95/EC)
2SD1267,
2SD1267A
2SB0942
2SB0942A
2SD1267
O-220F-A1
2SB0942A
2SD1267
2SD1267A
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Untitled
Abstract: No abstract text available
Text: 2SD1267AR Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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2SD1267AR
Freq20MÃ
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2SD1267
Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Text: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290
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OCR Scan
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2SD1267
2SD1267A
2SD1268
2SD1270
2SD1271
2SD1271A
2SD1272
2SD1279
SC-62
2SD1280
2SD1267
2SD1267A
2SD1271
2SD1273
2SD1273A
2SD1274
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SD1267, 2SD1267A 2SD1267, 2SD1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U n it ! m m 4 .4 m a x . • Features 2.9max. • High DC current gain hFE and good linearity
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OCR Scan
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2SD1267,
2SD1267A
2SB942,
2SB942A
2SD1267
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J300B
Abstract: 2SB942 2SB942A 2SD12 2SD1267 2SD1267A 400Collector
Text: Pow er Tra n sisto rs 2SD1267, 2SD1267A 2SD1267, 2SD 1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U nit ! mm 4.4m ax. • Features 2 .9 m a x . • H igh D C cu r re n t ga in I i f e
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OCR Scan
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PDF
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2SD1267,
2SD1267A
2SB942,
2SB942A
2SD1267
J300B
2SB942
2SB942A
2SD12
2SD1267A
400Collector
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