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    2SC536 TRANSISTOR Search Results

    2SC536 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC536 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc536

    Abstract: 2SC536 transistor transistor 2sC536 2SC536* transistor
    Text: 2SC536 2SC536 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 400 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC536 2sc536 2SC536 transistor transistor 2sC536 2SC536* transistor

    2sc536

    Abstract: transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR
    Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC536 150mA 30MHz 2sc536 transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC536 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF 2SC536

    2sc536

    Abstract: 2SC536 transistor 2sc536 noise figure hFE-200 to-92 npn ST2SC536
    Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC536 150mA 30MHz 2sc536 2SC536 transistor 2sc536 noise figure hFE-200 to-92 npn ST2SC536

    2sc536

    Abstract: 2sc536 noise figure 2SC536 transistor transistor 2sC536
    Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC536 150mA 30MHz 2sc536 2sc536 noise figure 2SC536 transistor transistor 2sC536

    2sc536

    Abstract: 2SC536 transistor 2SC536* transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 400 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO:


    Original     		PDF 2SC536 2sc536 2SC536 transistor 2SC536* transistor

    2sc536 noise figure

    Abstract: 2sc536 2SC536 transistor transistor 2sC536 hFE-200 to-92 npn
    Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC536 150mA 30MHz 2sc536 noise figure 2sc536 2SC536 transistor transistor 2sC536 hFE-200 to-92 npn

    2SC536

    Abstract: No abstract text available
    Text: 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC536 150mA 30MHz 2SC536

    la1135

    Abstract: transistor 2sc930 2sc536 sfp450h 2SC536 transistor toko 10k coils 2SC930 equivalent fm tuner mitsumi 6pin Mitsumi de RF SVC321
    Text: Ordering number : EN1272G LA1135 LA1135M Monolithic Linear IC For Car Radios and Home Stereos AM Tuner System Overview The LA1135 and LA1135M are high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo antenna : loop applications.


    Original     		PDF EN1272G LA1135 LA1135M LA1135 LA1135M transistor 2sc930 2sc536 sfp450h 2SC536 transistor toko 10k coils 2SC930 equivalent fm tuner mitsumi 6pin Mitsumi de RF SVC321

    B632K

    Abstract: D612 transistor 2SC536 D612K transistor 2sc1175 2SC536 transistor transistor b632k 2sc1175 2sd438 transistor B632
    Text: Ordering number:ENN341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]


    Original     		PDF ENN341G 2SB632, 632K/2SD612, 5V/35V, 2009B O-126 B632K, B632K D612 transistor 2SC536 D612K transistor 2sc1175 2SC536 transistor transistor b632k 2sc1175 2sd438 transistor B632

    transistor 2sc124

    Abstract: transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC15-0 HN / BC 548 / 9014 2SC166 HN / BC 548 / 9014 2SC376 HN / BC 546 / 9014 2SC15-1 HN / BC 546 / 9014


    Original     		PDF To-92 2SC15-0 2SC166 2SC376 2SC15-1 2SC167 2SC400 2SC16 2SC182 2SC401 transistor 2sc124 transistor 9014 NPN equivalent of transistor 9014 NPN 2sC103 transistor Transistor BC 548 transistor bc 547 BC 9014 2SC124 9014 Transistor BC 547 transistor

    C536 transistor

    Abstract: C536 transistor C536 transistor D545 b598 transistor Intermediate frequency transformer LA1600 Mitsumi de RF TN10896 D545
    Text: LA1600 Ordering number : EN2056C LA1600 Monolithic Linear IC Single-Band AM Radio Overview The LA1600, being an AM tuner IC placed in a 9-pin SIP, provides the functions of an AM tuner. It is usable in the band range up to SW band and is especially suited for use in low-cost AM radios and radio-controlled receivers.


    Original     		PDF LA1600 EN2056C LA1600, C536 transistor C536 transistor C536 transistor D545 b598 transistor Intermediate frequency transformer LA1600 Mitsumi de RF TN10896 D545

    b598 transistor

    Abstract: Mitsumi IF transformer TN10896 transistor C536 HW-50397 transistor c536 sanyo Intermediate frequency transformer mitsumi bar antenna coil LA1600 Mitsumi de RF
    Text: LA1600 Ordering number : EN2056C LA1600 Monolithic Linear IC Single-Band AM Radio Overview The LA1600, being an AM tuner IC placed in a 9-pin SIP, provides the functions of an AM tuner. It is usable in the band range up to SW band and is especially suited for use in low-cost AM radios and radio-controlled receivers.


    Original     		PDF EN2056C LA1600 LA1600, b598 transistor Mitsumi IF transformer TN10896 transistor C536 HW-50397 transistor c536 sanyo Intermediate frequency transformer mitsumi bar antenna coil LA1600 Mitsumi de RF

    sfp450h

    Abstract: rf voltmeter circuit diagrams SFP-450H BFU450CN la1135 YT-30007 Murata sfp450h 2SC930 E LA1135 diagram mitsumi coil rf
    Text: Ordering number: EN1272E Monolithic Linear IC LA1135, 1135M AM Tuner System for Car Radios and Home Stereos Overview The LA1135 is a high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo antenna:


    Original     		PDF EN1272E LA1135, 1135M LA1135 3021B-DIP20S LA1135] DIP20S 3036B-MFP20 sfp450h rf voltmeter circuit diagrams SFP-450H BFU450CN YT-30007 Murata sfp450h 2SC930 E LA1135 diagram mitsumi coil rf

    2SC536

    Abstract: D612K b632k 2sc1175 D612 2SB632 2SB632K 341G 2SD438 B632
    Text: Ordering n u m b e r:EN341G 2SB632,632K/2SD612,612K N 0.34 IG PNP/NPN Epitaxial Planar Silicon Transistors SAW O 25V/35V, 2A Low-Frequency Power Amp Applications F e a tu re s • High collector dissipation and wide ASO. : 2SB632,632K A b solute M axim um R atin g s a t Ta = 25°C


    OCR Scan     		PDF EN341g 2SB632 632K/2SD612 5V/35V, 2SB632, 2SB632K, D612K b632k, d612a 2SC536 D612K b632k 2sc1175 D612 2SB632K 341G 2SD438 B632

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


    OCR Scan     		PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362

    2sc536

    Abstract: B632K d612k 2sc1175 8Q transistor d612 2SB632 2SB632K 341G 2SB6
    Text: Ordering' number; EN341G 2SB632.632K/2SD612.612K N 0 .3 4 IG PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 25V/35V, 2A Low-Frequency Power Amp Applications F eatures • High collector dissipation and wide ASO. : 2SB632,632K A b solu te M axim um R atings at Ta = 25°C


    OCR Scan     		PDF EN341G 2SB632 632K/2SD612 5V/35V, 2SB632, 2SB632K, D612K 10hAJe 2sc536 B632K d612k 2sc1175 8Q transistor d612 2SB632K 341G 2SB6

    2SC458D

    Abstract: 2SC460B 2sc945p 2SC536G 2SC536F 2SC458C 2SC752G-TM 2SC536E 2SC3199Y 2SC458B
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25”C, Unless Otherwise Specified) 'c (W) (A) @Tc=25"< 'cBO ^CE V @ Ic & (mA) *^CE ^BE(SAT) 'c (V) Max @ (mA) c* \ 'c (mA) nf @ Freq c „ (MHz) (PF) Max CDIL


    OCR Scan     		PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC38BATH 2SC763 2SC9022 2SC458D 2SC460B 2sc945p 2SC536G 2SC536F 2SC458C 2SC752G-TM 2SC536E 2SC458B

    2SC752G-TM

    Abstract: 2sc945q 2SC3199Y 2SC3355 2SC383TM 2SC458B 2SC458C 2SC458D 2SC460 2SC460A
    Text: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC38BAT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB


    OCR Scan     		PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388AT 2SC763 2SC9022 rO-92-1 2SC945 2SC752G-TM 2sc945q 2SC458B 2SC458C 2SC458D 2SC460 2SC460A

    2SC536E

    Abstract: 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM 2SC3355
    Text: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC388AT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB


    OCR Scan     		PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388AT 2SC763 2SC9022 rO-92-1 2SC945 2SC536E 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM

    2SA608

    Abstract: 2SC536 transistor 2sa608 2005A 2SA60 2SA608 D 2SA1782 2SA608KNP 2SA608NP 2SA608SPA
    Text: SANYO S EM I CO ND UC TO R m 1 ;, j 35E CORP D • 7=n707t 0001180 T B T - 2 7 ' / r-: 2oo3A PNP Epitaxial Planar Silicon Transistors General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.


    OCR Scan     		PDF 1707k 2SA608 2SC536 2SA608. 2SA608SPA 2SA608NP 2SA608KNP T-91-20 SC-43 transistor 2sa608 2005A 2SA60 2SA608 D 2SA1782 2SA608KNP

    sanyo 2033

    Abstract: 2SA608 2SC536 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP 2SA608NP
    Text: SA NY O S E M I C O N D U C T O R CORP s iS S fe 7T=i707b o o m i a o 32E D 2033 2oo3A T P N P Epitaxial P la n a r S ilic o n T ran sis to rs General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.


    OCR Scan     		PDF 1707k T-27-/S" 2SA608 2SC536 2SA608. 2SA608SPA 2SA608NP 2SA608KNP T-91-20 SC-43 sanyo 2033 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP

    2sc 9015

    Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
    Text: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+


    OCR Scan     		PDF BCW86 O-92F BCY56 BCY57 BCY58 BCY59 2sc 9015 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		PDF O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212