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    2SC335 Price and Stock

    EVVO Semiconductor 2SC3356

    RF TRANS NPN 12V 7GHZ SOT23
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    DigiKey 2SC3356 Digi-Reel 1,100 1
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    EVVO Semiconductor 2SC3357

    RF TRANS NPN 12V 6.5GHZ SOT89
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    California Eastern Laboratories (CEL) 2SC3357-A

    RF TRANS NPN 12V 6.5GHZ SOT89
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    California Eastern Laboratories (CEL) 2SC3356-A

    RF TRANS NPN 12V 7GHZ SOT23
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    California Eastern Laboratories (CEL) 2SC3357-T1-A

    RF TRANS NPN 12V 6.5GHZ SOT89
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    2SC335 Datasheets (144)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC335 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC335 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC335 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC335 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC335 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC335 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC335 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3351-L NEC For amplify low noise and high frequency. Original PDF
    2SC3351-T1B NEC For amplify low noise and high frequency. Original PDF
    2SC3351-T2B NEC For amplify low noise and high frequency. Original PDF
    2SC3352 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3352 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3352 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3352 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3352 Unknown Cross Reference Datasheet Scan PDF
    2SC3352 Panasonic Silicon NPN Triple Diffused Junction Mesa Type Power Transistors Scan PDF
    2SC3352 Panasonic Silicon NPN Triple Diffused Junction Mesa Type Power Transistor Scan PDF
    2SC3352A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3352A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3352A Panasonic Silicon NPN Triple Diffused Junction Mesa Type Power Transistors Scan PDF
    ...

    2SC335 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3352

    Abstract: 2SC335
    Text: Inchange Semiconductor Product Specification 2SC3352 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector


    Original     		PDF 2SC3352 O-220Fa O-220Fa) 2SC3352 2SC335

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER  FEATURES 1 * Low Noise and High Gain * High Power Gain  TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3355L-T92-B 2SC3355G-T92-B


    Original     		PDF 2SC3355 2SC3355L-T92-B 2SC3355G-T92-B 2SC3355L-T92-K 2SC3355G-T92-K QW-R201-036

    2SC3356

    Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
    Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS

    2SC3356 s2p

    Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF 2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356

    2SC3355

    Abstract: transistor 2sc3355 and application PA33 marking PA33
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS


    Original     		PDF 2SC3355 2SC3355 transistor 2sc3355 and application PA33 marking PA33

    SOT R23

    Abstract: marking R24 2SC3356 SOT R25 r25 q
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR


    Original     		PDF OT-23-3L OT-23-3L 2SC3356 width350s, SOT R23 marking R24 2SC3356 SOT R25 r25 q

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3


    Original     		PDF 2SC3356 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz


    Original     		PDF 2SC3357

    2SC3356-T1B-A

    Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B
    Text: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz


    Original     		PDF 2SC3356 R09DS0021EJ0300 2SC3356 2SC3356-T1B 2SC3356-A 2SC3356-T1B-A 2SC3356 s2p

    2SC3356 Application Note

    Abstract: 2sc3356 2SC3356R25 2SC3356 r25
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SC3356 2SC3356 OT-23 2SC3356 Application Note 2SC3356R25 2SC3356 r25

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR


    Original     		PDF OT-23-3L OT-23-3L 2SC3356

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		PDF 2SC3356 OT-23 QW-R206-024

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage


    Original     		PDF 2SC3356 2SC3356 2SC3356L 2SC3356G 2SC3356-x-AE3-R 2SC3356L-x-AE3-R 2SC3356G-x-AE3-R OT-23 2SC3356L-x-AE3-R QW-R206-024

    2SC3357

    Abstract: RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620
    Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.


    Original     		PDF 2SC3357 2SC3357 RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620

    2SC3354

    Abstract: No abstract text available
    Text: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • High transition frequency fT 15.6±0.5


    Original     		PDF 2SC3354 2SC3354

    2SC3355

    Abstract: 2SC3355, npn F10G NPN SILICON EPITAXIAL TRANSISTOR
    Text: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER SYMBOL RATING


    Original     		PDF 2SC3355 QW-R201-036 2SC3355 2SC3355, npn F10G NPN SILICON EPITAXIAL TRANSISTOR

    2SC3354

    Abstract: No abstract text available
    Text: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • High transition frequency fT


    Original     		PDF 2SC3354 2SC3354

    2SC3356

    Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.


    Original     		PDF 2SC3356 2SC3356 IC nec 555 transistor 1431 T marking 544 low noise amplifier

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER SYMBOL RATING


    Original     		PDF 2SC3355 QW-R201-036

    2SC3353A

    Abstract: 25C33 hig voltage high speed NPN transistors 2SC3353
    Text: Power Transistors ^32052 0 0 1 b4 2 4 . 2SC3353, 2SC3353A 335 2S C 3353, 2S C 3353A Silicon NPN Triple-Diffused Junction M esa Type P ackage Dim ensions High B reakdown Voltage, High Sp eed Switching • F eatures • • • • Unit I mm 4.4 max. . High speed switching


    OCR Scan     		PDF R32flS2 D01b424 2SC3353, 2SC3353A 2SC3353 35B52 2SG3353, 2SC3353A 25C33 hig voltage high speed NPN transistors

    6852 d TRANSISTOR

    Abstract: 2SC3357
    Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for PACKAGE DIMENSIONS Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.


    OCR Scan     		PDF 2SC3357 2SC3357 OT-89) S22e-FREQUENCY 6852 d TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors I M edium Pow er T ran sistor 50V, 0.5A 2S D 1949 / 2SD1484K / 2SC 1741 AS • F eatu res • A b s o l u t e m a x im u m r a tin g s (T a = *2 5 ÌD ) 1 ) High cu rre nt (Ic ^ O . S A ) 2 ) Low VcE{sat). (Typ. 0 .1 V at Ic /Ib = 150/15m A )


    OCR Scan     		PDF 2SD1949 2SD1484K 2SC1741S 2SC3359S 150/15m 2SC1741AS

    C3353

    Abstract: 2SC3353 2SC3353A
    Text: P o w e r T r a n s i s t o r ; • o o io a 33 bT B sasM 3 ^ 2 ■ P N C 5 C 3353>2SC 3353A 2SC3353, 2SC3353A Silicon NPN Triple-Diffused Junction Mesa Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it ! mm 4.4m ax. 10.2m ax. ■ Features


    OCR Scan     		PDF 2SC3353 2SC3353A 2SC3353, C3353 2SC3353A

    6852 d TRANSISTOR

    Abstract: 2SC3357 3zm-5
    Text: SILICON TRANSISTOR 2SC3357 N P N S IL IC O N E P IT A X IA L T R A N S IS T O R PO W E R M IN I M O L D D E S C R IP T IO N P A C K A G E D IM E N S IO N S in millimeters The 2SC3357 is an N P N silicon epitaxial transistor designed for low noise amplifier at V H F , U H F and C A T V band.


    OCR Scan     		PDF 2SC3357 2SC3357 6852 d TRANSISTOR 3zm-5