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    2SC3122 Price and Stock

    Toshiba America Electronic Components 2SC3122(TE85L)

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    2SC3122 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3122 Kexin Silicon NPN Epitaxial Original PDF
    2SC3122 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3122 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3122 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3122 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC3122 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3122 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3122 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC3122 Toshiba TRANSISTOR (TV VHF RF AMPLIFIER APPLICATIONS) Scan PDF
    2SC3122 Toshiba NPN Transistor Scan PDF
    2SC3122 Toshiba Junction FETs / MOSFET / Transistors Scan PDF

    2SC3122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N50b

    Abstract: BCY5B 2SC307B DIODE bon BCW60RD 2N50B2 BFW83
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BFW83 2SC997 2N50B2 2N50B2 TISB4 TISB4 BSX2B 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2SC1394 2SC1394 BF329 2N3933 BFW70 ZTX327 BFSll ~~iJ~7 25 30 MPSH33 SE5035 BFR37 BFR37 2N4934 BCW60A


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    PDF BFW83 2SC997 2N50B2 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2N50b BCY5B 2SC307B DIODE bon BCW60RD

    Untitled

    Abstract: No abstract text available
    Text: 2SC3122 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 TV VHF RF Amplifier Applications • Unit: mm High gain: Gpe = 24dB typ. (f = 200 MHz) • Low noise: NF = 2.0dB (typ.) (f = 200 MHz) • Excellent forward AGC characteristics Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC3122 SC-59

    200MHZ

    Abstract: 2SC3122
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3122 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise :NF=2.0dB Typ. (f=200MHZ) 0.55 High Gain: Gpe=24dB(Typ.)(f=200MHz) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01


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    PDF 2SC3122 OT-23 200MHZ) 200MHz 200MHZ 2SC3122

    RF POWER TRANSISTOR NPN vhf

    Abstract: RF TRANSISTOR high gain low voltage NPN transistor 2SC3122 rf amplifier 10mhz RF transistor gain 20dB RF POWER TRANSISTOR NPN vhf high gain transistor
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION •High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low Noise: NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃


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    PDF 2SC3122 200MHz RF POWER TRANSISTOR NPN vhf RF TRANSISTOR high gain low voltage NPN transistor 2SC3122 rf amplifier 10mhz RF transistor gain 20dB RF POWER TRANSISTOR NPN vhf high gain transistor

    2SC3122

    Abstract: TOKO marking Guide
    Text: 2SC3122 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 TV VHF RF Amplifier Applications • High gain: Gpe = 24dB typ. (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 MHz) · Excellent forward AGC characteristics Unit: mm Maximum Ratings (Ta = 25°C)


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    PDF 2SC3122 2SC3122 TOKO marking Guide

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    2SC3122

    Abstract: No abstract text available
    Text: 2SC3122 TO SHIBA 2 S C 3 1 22 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV VHF RF AM PLIFIER APPLICATIONS • • • High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) Excellent Forward AGC Characteristics


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    PDF 2SC3122 200MHz) SC-59 M-15T M-25T 50MHz 2SC3122

    2SC3122

    Abstract: 50M1
    Text: 2SC3122 TOSHIBA 2 S C 3 1 22 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE TV VHF RF AMPLIFIER APPLICATIONS. U n it in mm + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz)


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    PDF 2SC3122 200MHz) 50MHz 2SC3122 50M1

    Untitled

    Abstract: No abstract text available
    Text: 2SC3122 TOSHIBA 2 S C312 2 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV VHF RF AM PLIFIER APPLICATIONS • • • + 0.5 2.5-0.3 High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) Excellent Forward AGC Characteristics


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    PDF 2SC3122 200MHz) 50MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SC3122 TOSHIBA TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE < ; r w êf 3 mm j j 1 TV VHF RF AMPLIFIER APPLICATIONS. FEATURES : High Gain : Gpe = 24dB Typ. (f=200MHz) • Low Noise : NF = 2.UdB (Typ.) (f=200MHz) • Excellent Forward AGO Characteristics,


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    PDF 2SC3122 200MHz) 961001EAA2'

    2SC3122

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3122 2 S C 3 1 22 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV VHF RF AMPLIFIER APPLICATIONS • • • High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) Excellent Forward AGC Characteristics


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    PDF 2SC3122 200MHz) 2SC3122

    V30289

    Abstract: No abstract text available
    Text: SILICON NPN PLANAR TYPE 2SC3122 TV VHF RF AMPLIFIER APPLICATIONS. FEATURES : . High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF 2SC3122 200MHz) 50MHjf, 50MHz V30289

    2SC31

    Abstract: m15t
    Text: 2SC31 22 SILICQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r T V V H F RF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • High Gain : Gpe = 24dB Typ. (f=200M Hz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics.


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    PDF 2SC31 200MHz) 2SC3122 50MHz m15t

    1SV211

    Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
    Text: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245


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    PDF SC-59) SC-70) 3SK146 3SK153 2SC3828 2SC4214 SC4244 2SC3121 2SC3120 2SC3862 1SV211 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK275

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2SC3532

    Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
    Text: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178


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    PDF 2SC4210 2SC4211 2SD1328 2SD1935 2SC4116 2SC2621 2SC3425 2SC4181 2SC2688 2SD1781K 2SC3532 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535

    2SC3115

    Abstract: sC4633 2sc3114 2SC3136 2SC3098 2SC3099 2SC3102 2SC3103 2SC3104 2SC3105
    Text: - 146 - WtXËfà 2g -g ÍT ffl -n & Vç b o VcEO IC DC Pc Pc* (A) (W) (W) (V) (V) 2SC3098 VHF/UHF LN A 30 20 0.05 0.15 20 0.03 0.15 2SC3099 * 2 VHF/UHF LN A 20 2SC31Ö1 HF PA 35 2SC3103 H# H « Hæ 2SC3104 (Ta=25°C) ( T a = 2 5 U *EP(ÌTc=25£C) ICBO. (max)


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    PDF 2SC3098 2SC3099 2SC3102 2SC3103 2SC3104 2SC3105 2SC3110 2SC3112 2SC3129L/S SC-59A) 2SC3115 sC4633 2sc3114 2SC3136 2SC3098 2SC3099

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SC3119

    Abstract: 2SA1245 2SC3011 2SC3098 2SC3606 2SK210
    Text: Powered -3 by ICminer.com Application PNP f T TYP. MIN. VcE(sat) MAX. hFE Type No. v CE0 'c PC VCE >C (V) (mA) (mW) (V) (mA) NF MAX. (TYP.) CD VCE >E VcE lc f (MHz) (V) (mA) (dB> (V) (mA) (Hz) - 900 10 2 6.0 10 3 800M - - 2400 10 2 (8) 10 2 800M •c NPN


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    PDF 2SK210 2SK211 2SC3119 2SA1245 2SC3011 2SC3098 2SC3606 2SK210

    SV153A

    Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
    Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670


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    PDF 2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172 1SV252 1SV102 SV149 2V02H SV153A Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P