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    2SC2715M Search Results

    2SC2715M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2715M Jiangsu Changjiang Electronics Technology TRANSISTOR Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original     		PDF WBFBP-03B WBFBP-03B 2SC2715M 2SC2715M

    2SC2715M

    Abstract: 30MHZ
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original     		PDF WBFBP-03B WBFBP-03B 2SC2715M 2SC2715M 30MHZ

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)


    Original     		PDF WBFBP-03B WBFBP-03B 2SC2715M 2SC2715M