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Toshiba America Electronic Components 2SB906-Y(TE16L1,NQ TRANS PNP 60V 3A PW-MOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB906-Y(TE16L1,NQ	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.48953	Buy Now
	2SB906-Y(TE16L1,NQ	Digi-Reel			1	1 $1.72 10 $1.096 100 $1.72 1000 $0.53131 10000 $0.53131	Buy Now
	2SB906-Y(TE16L1,NQ	Cut Tape			1	1 $1.72 10 $1.096 100 $1.72 1000 $0.53131 10000 $0.53131	Buy Now
Avnet Americas	2SB906-Y(TE16L1,NQ	Reel	6,000	18 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.33744	Buy Now
Mouser Electronics	2SB906-Y(TE16L1,NQ		1,882			1 $1.16 10 $0.944 100 $0.674 1000 $0.493 10000 $0.446	Buy Now
Chip1Stop	2SB906-Y(TE16L1,NQ	Cut Tape	1,760			1 - 10 $0.906 100 $0.705 1000 $0.487 10000 $0.487	Buy Now
Toshiba America Electronic Components 2SB906-Y(TE16L1,NQ) Trans GP BJT PNP 60V 3A 3-Pin(2+Tab) New PW-Mold T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SB906-Y(TE16L1,NQ)		1,760		28	1 - 10 - 100 $0.8813 1000 $0.6088 10000 $0.6088	Buy Now

2SB906 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB906	Kexin	Silicon PNP Epitaxial	Original	PDF
2SB906	Toshiba	Silicon PNP Transistor	Original	PDF
2SB906	Toshiba	PNP transistor	Original	PDF
2SB906	TY Semiconductor	Silicon PNP Epitaxial - TO-252	Original	PDF
2SB906	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SB906	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB906	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB906	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB906	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB906	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB906	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB906	Unknown	Cross Reference Datasheet	Scan	PDF
2SB906	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SB906	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

2SB906	Toshiba	Silicon PNP transistor for audio frequency power amplifier applications	Scan	PDF
2SB906	Toshiba	TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)	Scan	PDF
2SB906-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB906-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB906-Y(TE16L1,NQ	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 60V 3A PW-MOLD	Original	PDF
2SB906-Y(TE16L1,NQ)	Toshiba	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP 60V 3A PW-MOLD	Original	PDF

2SB906 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
B906 Abstract: 2SB906 2SD1221 Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	PDF	2SB906 2SD1221 B906 2SB906 2SD1221
transistor B906 Abstract: 2SB906 7B1A B-906 B906 2SD1221 Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。	Original	PDF	2SB906 2SD1221 transistor B906 2SB906 7B1A B-906 B906 2SD1221
transistor B906 Abstract: B906 2SB906 2SD1221 B-906 Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	PDF	2SB906 2SD1221 transistor B906 B906 2SB906 2SD1221 B-906
D1221 Abstract: 2SD1221 2SB906 Text: 2SD1221 東芝トランジスタシリコンNPN三重拡散形 PCT方式 2SD1221 ○ 低周波電力増幅用単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 20 W (Tc = 25°C) • 2SB906 とコンプリメンタリになります。	Original	PDF	2SD1221 2SB906 20070701-JA D1221 2SD1221 2SB906
Untitled Abstract: No abstract text available Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	PDF	2SB906 2SD1221
2SB906 Abstract: 2SD1221 D1221 Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	PDF	2SD1221 2SB906 2SB906 2SD1221 D1221
2SB906 Abstract: 2SD1221 B906 Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	PDF	2SB906 2SD1221 2SB906 2SD1221 B906
D1221 Abstract: 2SB906 2SD1221 Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	PDF	2SD1221 2SB906 D1221 2SB906 2SD1221
Untitled Abstract: No abstract text available Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	PDF	2SD1221 2SB906
2sd1221 toshiba Abstract: D1221 2SB906 2SD1221 Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	PDF	2SD1221 2SB906 2sd1221 toshiba D1221 2SB906 2SD1221
B906 Abstract: 2SB906 2SD1221 Text: 2SB906 東芝トランジスタシリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。	Original	PDF	2SB906 2SD1221 20070701-JA B906 2SB906 2SD1221
2SB906 Abstract: No abstract text available Text: Transistors SMD Type Silicon PNP Epitaxial 2SB906 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector saturation voltage. Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1	Original	PDF	2SB906 O-252 -50mA, 2SB906
Untitled Abstract: No abstract text available Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	PDF	2SD1221 2SB906
B906 Abstract: 2SB906 2SD1221 Text: 2SB906 東芝トランジスタシリコンPNP三重拡散形 PCT方式 2SB906 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.0 V (標準) (IC = −3 A, IB = −0.3 A) • コレクタ損失が大きい。 • 2SD1221 とコンプリメンタリになります。	Original	PDF	2SB906 2SD1221 B906 2SB906 2SD1221

Untitled Abstract: No abstract text available Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB906 Unit in inm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES : . Low Collector Saturation Voltage : V C E sat =-1.0V(Typ.) (Ic— 3A, IB =-0.3A) 5.2±0.2 j . High Power Dissipation : Pç=20W (Tc-25°C) . Complementary to 2SD1221	OCR Scan	PDF	2SB906 68MAX. Tc-25 2SD1221 -50mA,
rj25 Abstract: 2SB906 2SD1221 Text: TO SH IBA TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Low Collector Saturation Voltage : VcE(sat) = -1 .0 V (Typ.) (IC = - 3 A, IB = -0 .3 A) High Power Dissipation : P q = 20 W (Tc = 25°C)	OCR Scan	PDF	2SB906 2SD1221 rj25 2SB906 2SD1221
20W power transistor Abstract: No abstract text available Text: TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES: . Low Collector Saturation Voltage : VcE(sat)— l-OV(Typ.) (IC=-3A, IB=-0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)	OCR Scan	PDF	2SB906 2SD1221 68MAX. -50mA, 20W power transistor
Untitled Abstract: No abstract text available Text: TO SHIBA 2SB906 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • U nit in mm Low Collector Saturation Voltage : VCE (sat)= -1 -0 V (Typ.) (IC = - 3 A , IB = -0 .3 A ) • High Power Dissipation : P q = 20W (Tc = 25°C)	OCR Scan	PDF	2SB906 2SD1221
Untitled Abstract: No abstract text available Text: 2SB906- SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATION. (a) • • • Low Collector Saturation Voltage : VCE(sat)= —1.0V(Typ.) (ic = —3A, IB = -0 .3 A ) High Power Dissipation : P c = 20W (Tc = 25',C)	OCR Scan	PDF	2SB906· 2SD1221 95MAX 2SB906
2SB927 Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M Text: - 66 - T a = 2 5 cC , EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O	OCR Scan	PDF	2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908
2SB906 Abstract: 2SD1221 2sd1221 toshiba Text: TO SHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P0 = 2OW Complementary to 2SB906	OCR Scan	PDF	2SD1221 2SB906 2SD1221 2sd1221 toshiba
Untitled Abstract: No abstract text available Text: TOSHIBA 2SB906 Transistor Silicon PNP Triple Diffused Type PCT Process Audio Frequency Power Amplifier Applications Features • Low Collector Saturation Voltage - VCE (sat) = -1 -0V (Typ.) (Ic = 3A, lB = -0.3A) • High Power Dissipation - Pc = 20W (Te = 25°=C)	OCR Scan	PDF	2SB906 2SD1221
2SB906 Abstract: 2SD1221 Text: TOSHIBA TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Low Collector Saturation Voltage : VcE(sat) = -1 .0 V (Typ.) (IC = - 3 A, IB = -0 .3 A) High Power Dissipation : P q = 20 W (Tc = 25°C)	OCR Scan	PDF	2SB906 2SD1221 2SB906 2SD1221
Untitled Abstract: No abstract text available Text: TOSHIBA TOSHIBA TRANSISTOR 2SB906 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB906 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • Low Collector Saturation Voltage : V cE (sat) = - 1 .0 V (Typ.) (IC = - 3 A, IB = - 0 .3 A) High Power Dissipation : P@ = 20 W (Tc = 25°C)	OCR Scan	PDF	2SB906 2SD1221 961001EAA2 ll200

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2SB906 Price and Stock

Toshiba America Electronic Components 2SB906-Y(TE16L1,NQ

Toshiba America Electronic Components 2SB906-Y(TE16L1,NQ)

2SB906 Datasheets (20)

2SB906 Datasheets Context Search

B906

transistor B906

transistor B906

D1221

Untitled

2SB906

2SB906

D1221

Untitled

2sd1221 toshiba

B906

2SB906

Untitled

B906

Untitled

rj25

20W power transistor

Untitled

Untitled

2SB927

2SB906

Untitled

2SB906

Untitled