Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB0767 Search Results

    2SB0767 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB0767 Panasonic PNP Transistor Original PDF
    2SB0767 Panasonic Silicon PNP epitaxial planar type small signal transistor Original PDF
    2SB07670QL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80VCEO .5A MINI PWR Original PDF
    2SB07670RL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80VCEO .5A MINI PWR Original PDF
    2SB0767CQ Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF

    2SB0767 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD0875G

    Abstract: 2SB0767G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification Complementary to 2SB0767G • Features ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) 2SD0875G 2SB0767G 2SD0875G 2SB0767G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 M Di ain sc te on na tin nc


    Original     		PDF 2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0875G • Features ■ Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SB0767G 2SD0875G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767G • Features ■ Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SD0875G 2SB0767G

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistors 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0875 (2SD875) Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage


    Original     		PDF 2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.5±0.1 1.5±0.1 Parameter Symbol Rating


    Original     		PDF 2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767)

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3


    Original     		PDF 2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification Complementary to 2SB0767G • Package • Large collector power dissipation PC


    Original     		PDF 2002/95/EC) 2SD0875G 2SB0767G

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1


    Original     		PDF 2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 0.4±0.08 1.5±0.1 Parameter Rating Unit VCBO −80 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −5 V Peak collector current


    Original     		PDF 2SB0767 2SB767) 2SD0875 2SD875)

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm * 2.5±0.1 +0.25 4.0–0.20 0.4max. 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter 45° +0.1


    Original     		PDF 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875

    2SB0767G

    Abstract: 2SD0875G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767G • Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SD0875G 2SB0767G 2SB0767G 2SD0875G

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SD0875 2SD875) 2SB0767 2SB767)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 2.5±0.1 0.4 max. 2.6±0.1 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875)

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistors 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −80 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 For low-frequency output amplification Complementary to 2SD0875 (2SD875) 1.6±0.2 3 2 0.5±0.08 1.0+0.1 –0.2 1


    Original     		PDF 2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD0875G • Package • Large collector power dissipation PC


    Original     		PDF 2002/95/EC) 2SB0767G 2SD0875G

    2SB0767G

    Abstract: 2SD0875G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0875G • Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SB0767G 2SD0875G 2SB0767G 2SD0875G

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 0.4±0.08 1.5±0.1 Rating Unit VCBO −80 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −5 V Peak collector current


    Original     		PDF 2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875