2SA940
Abstract: 2SA940 equivalent 2SC2073
Text: SavantIC Semiconductor Product Specification 2SA940 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2073 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2
|
Original
|
PDF
|
2SA940
O-220
2SC2073
-120V
2SA940
2SA940 equivalent
2SC2073
|
2sc2073
Abstract: Power Transistors 2sc2073 amplifier semiconductor product 2SA940 savantic NPN Power Transistors
Text: SavantIC Semiconductor Product Specification 2SC2073 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA940 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
|
Original
|
PDF
|
2SC2073
O-220
2SA940
2sc2073
Power Transistors
2sc2073 amplifier
semiconductor product
2SA940
savantic
NPN Power Transistors
|
2SA940
Abstract: 2SC2073
Text: NPN 2SC2073 EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT TO-220 ! Complement to 2SA940 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)
|
Original
|
PDF
|
2SC2073
O-220
2SA940
2SA940
2SC2073
|
2SA940
Abstract: 2SC2073
Text: JMnic Product Specification 2SA940 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2073 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
|
Original
|
PDF
|
2SA940
O-220
2SC2073
-120V
2SA940
2SC2073
|
2SC2073
Abstract: 2sc2073 amplifier transistor 2sc2073 2SA940
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications.
|
Original
|
PDF
|
2SC2073
2SA940
500mA;
500mA
2SC2073
2sc2073 amplifier
transistor 2sc2073
2SA940
|
2SA940
Abstract: 2SA940 equivalent 2SC2073
Text: PNP 2SA940 EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT TO-220 ! Complementary to 2SC2073 ABSOLUTE MAXIMUM RATING Ta=25°c c Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)
|
Original
|
PDF
|
2SA940
O-220
2SC2073
-120V
-50mA
2SA940
2SA940 equivalent
2SC2073
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
PDF
|
O-220
2SC2073
O-220
2SA940
|
2SA940
Abstract: transistor 2SA940 2SC2073 2sa940 2sc2073
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA940 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier ,
|
Original
|
PDF
|
2SA940
-150V
2SC2073
-50mA
-120V
2SA940
transistor 2SA940
2SC2073
2sa940 2sc2073
|
2SA940
Abstract: 2SA940 equivalent 2SC2073
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA940 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier ,
|
Original
|
PDF
|
2SA940
-150V
2SC2073
-50mA
-120V
2SA940
2SA940 equivalent
2SC2073
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
PDF
|
O-220
2SC2073
O-220
2SA940
|
2SC2073
Abstract: 2SA940
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
PDF
|
O-220
2SC2073
O-220
2SA940
2SC2073
2SA940
|
2SC2073
Abstract: transistor 2sc2073
Text: 2SC2073 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features 1 2 3 Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Paramenter Value Units
|
Original
|
PDF
|
2SC2073
O-220
O-220
2SA940
transistor 2sc2073
|
mx 2sb834
Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Text: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO
|
Original
|
PDF
|
O-220
2SA940
2SC2073
2SD880
2SB834
2SD313
BD941
BD949
BD950
BU406
mx 2sb834
2sb834 mx
LB125
2sa940 2sc2073
MJE13005
tip41c pins
tip127 data
REG lm317
IC LM317 DATA SHEET
2SC2073
|
Untitled
Abstract: No abstract text available
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA940 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage :V(BR)CEo=-150V(Min) • DC Current Gain : h FE =40-140@l c =-0.5A
|
Original
|
PDF
|
2SA940
-150V
2SC2073
O-220C
-10mA;
-50mA
-120V;
|
|
|
2SA940
Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA940 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SA940 Unit in mm POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS ^ 3.6 ± 0.2 10.3MAX iT * 7 U .C • • Complementary to 2SC2073 M AXIM UM RATINGS (Ta = 25°C)
|
OCR Scan
|
PDF
|
2SA940
2SC2073
2SA940
|
2SA940
Abstract: 2SC2073 2SA94 PEC 120V
Text: ÆàMOS PEC PNP SILICON POWER TRANSISTORS PNP 2SA940 2SA940 transistor is designed for use in general purpose power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEO= 150V Min * DC Current Gain hFE= 40-140@lc= 500mA * Complementary NPN 2SC2073
|
OCR Scan
|
PDF
|
2SA940
500mA
2SC2073
2SC2073
2SA94
PEC 120V
|
2SC2073
Abstract: 2SA940 AC75 2sc2073 amplifier
Text: TO SH IBA 2SC2073 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2073 Unit in mm VERTICAL OUTPUT APPLICATIONS. • • Wide Safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
|
OCR Scan
|
PDF
|
2SC2073
2SA940
2SC2073
2SA940
AC75
2sc2073 amplifier
|
2SC2073
Abstract: transistor 2sc2073 2sc2073 amplifier 2SA940 FI150
Text: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN 2SC2073 2SC2073 transistor is designed for use in general purpose Power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEO= 150V Min * DC Current Gain hFE= 40-140@lc= 500mA * Complementary PNP 2SA940
|
OCR Scan
|
PDF
|
2SC2073
500mA
2SA940
fi150pC
Vce-10V
transistor 2sc2073
2sc2073 amplifier
2SA940
FI150
|
2SC2073
Abstract: 2Sa940 2sa940 2sc2073
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2073 POWER AMPLIFIER VERTICAL OUTPUT Unit in mm APPLICATIONS. 1Q3MAX. APPLICATIONS. j23.6±a* FEATURES: . Wide Safe Operating Area. . Complementary to 2SA940 1-5 M A X . MAXIMUM RATINGS Ta=25°C 2 .5 4 CHARACTERISTIC SYMBOL
|
OCR Scan
|
PDF
|
2SC2073
2SA940
500mA
500mA,
2SC2073
2Sa940
2sa940 2sc2073
|
2SC2071
Abstract: 2sa979 2sa939 2SA910 2SA987 2SA991 2SC2238 2SA968 2SA939 B 2SA995 2SC2011
Text: - 18 - Ta=25,C.*6HáTc=25,C M 2SA937MLN 2SA939 2SA940 2SA949 2SA950 2SA952 2SA953 2SA954 2SA963 2SA965 2SA966 2SA968 2SA968A 2SA968B 2SA970 2SA979 2SA984 2SA984K 2SA985 2SA985A 2SA987 2SA988 2SA990 2SA991 2SA992 2SA995 2SA999 2SA999L 2SA1005 2SA1006 2SA1006A
|
OCR Scan
|
PDF
|
2SA937MLN
2SA939
2SA940
2SA949
2SA950
2SA952
2SA991
2SC1845
2SA992
100Hz
2SC2071
2sa979
2sa939
2SA910
2SA987
2SA991
2SC2238 2SA968
2SA939 B
2SA995
2SC2011
|
2Sc2073
Abstract: 2Sa940 2-10a1a
Text: 2 S C 2 0 7 3 SILICQNNPN triple pffusedtype pcj process Unit in mm PO W ER AMPLIFIER APPLICATIONS. VERTICAL OUTPUT APPLICATIONS. • • Wide Safe Operating Area. Complementary to 2SA940 SlO< M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
PDF
|
2SC2073
2SA940
O-220AB
SC-46
2-10A1A
eigh140
500mA
500mA,
500mA
|
2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
|
OCR Scan
|
PDF
|
2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
|
S1854
Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686
|
OCR Scan
|
PDF
|
2SA473
2SB553
2SA656A
2SB554
2SA657A
2SB595
2SA658A
2SB596
2SA739
2SB673
S1854
s1854 a
mp4002
MP3009
2SC3303
2SC520A
2SC519A
MP4004
S2055
mp4001
|
2SA940
Abstract: Z10A1 2sc2073
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA940 Unit in nan POWER A M P L I F I E R 10.31ÍAX. 0:s.6±az AP P LIC A TIO N S . V E R T IC A L OUTPUT A P P L IC A T IO N S - FEATURES: . Complementary to 2SC2073 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING
|
OCR Scan
|
PDF
|
2SA940
2SC2073
Z-10A1A
-120V,
-500mA
-500mA,
-50mA
2SA940
Z10A1
2sc2073
|