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    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


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    PDF 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494

    H11A10

    Abstract: PAAAT
    Text: Optoisolator Specifications H11A10 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Phototransistor Current Threshold Switch T h e H I 1A10 is a gallium arse n id e in frared em itting diode coupled with a silicon p h o to tra n sisto r in a d u al in-line package. It is


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    PDF H11A10 H11A10 PAAAT

    2N6306

    Abstract: 2N6307 2n6308 zn63 2N6307 Motorola
    Text: #% • im-_ -4 ^ iy ^ « M > - jw y g .'á MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VO LTAG E NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage Inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching


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    PDF 2N6306 2N6307, 2N6308 2NS306 2N6307 --2N6306, 2N6308 2N6306 2N6307 zn63 2N6307 Motorola