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    2N916 Search Results

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    2N916 Price and Stock

    Raytheon 2N916

    TRANSISTOR,BJT,NPN,25V V(BR)CEO,TO-18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N916 1,014
    • 1 $0.744
    • 10 $0.744
    • 100 $0.744
    • 1000 $0.31
    • 10000 $0.31
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    2N916 1
    • 1 $2.5884
    • 10 $2.5884
    • 100 $2.5884
    • 1000 $2.5884
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    GTCAP 2N916

    TRANSISTOR,BJT,NPN,25V V(BR)CEO,TO-18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N916 40
    • 1 $1.24
    • 10 $0.992
    • 100 $0.744
    • 1000 $0.744
    • 10000 $0.744
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    Raytheon 2N916JANL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N916JANL 13
    • 1 $19.6
    • 10 $14.7
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    Fairchild Semiconductor Corporation USN2N916

    IC (Also Known As: 2N916)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components USN2N916 11
    • 1 $6.75
    • 10 $3.375
    • 100 $3.375
    • 1000 $3.375
    • 10000 $3.375
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    General Electric Company 2N916

    TRANSISTOR,BJT,NPN,25V V(BR)CEO,TO-18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N916 8
    • 1 $0.744
    • 10 $0.62
    • 100 $0.62
    • 1000 $0.62
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    2N916 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N916 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=25 / Ic=0.1 / Hfe=50-200 / fT(Hz)=250M / Pwr(W)=0.36 Original PDF
    2N916 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=25 / Ic=0.1 / Hfe=50-200 / fT(Hz)=250M / Pwr(W)=0.36 Original PDF
    2N916 Central Semiconductor METAL CAN Transistors Scan PDF
    2N916 Central Semiconductor Metal Can Transistors Scan PDF
    2N916 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N916 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N916 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N916 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N916 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N916 Micro Electronics Semiconductor Devices Scan PDF
    2N916 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N916 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N916 Motorola Power Transistor Selection Guide Scan PDF
    2N916 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N916 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N916 Unknown GE Transistor Specifications Scan PDF
    2N916 Unknown GE Transistor Specifications Scan PDF
    2N916 Unknown Transistor Replacements Scan PDF
    2N916 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N916 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N916 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N916

    Abstract: 250M
    Text: 2N916 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


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    PDF 2N916 O206AA) 5/10m 2-Aug-02 2N916 250M

    2n916

    Abstract: No abstract text available
    Text: 2N916 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N916 Availability Online Store Diodes


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    PDF 2N916 2N916 STV3208 LM3909N LM3909

    Untitled

    Abstract: No abstract text available
    Text: 2N916CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


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    PDF 2N916CSM 5/10m 17-Jul-02

    250M

    Abstract: 2N916CSM
    Text: 2N916CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


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    PDF 2N916CSM 5/10m 2-Aug-02 250M 2N916CSM

    250M

    Abstract: 2N916DCSM
    Text: 2N916DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


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    PDF 2N916DCSM MO-041BB) 5/10m 2-Aug-02 250M 2N916DCSM

    Untitled

    Abstract: No abstract text available
    Text: 2N916 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


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    PDF 2N916 O206AA) 5/10m 19-Jun-02

    2N916

    Abstract: No abstract text available
    Text: 2N916 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


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    PDF 2N916 O206AA) 5/10m 16-Jul-02 2N916

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    2N310B

    Abstract: 2N2270
    Text: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*


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    PDF 2N718A 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N310B 2N2270

    271A

    Abstract: 2N916
    Text: M I L - S - 1 9 5 0 0 / 2 7 1A NAVY AMENDMENT 5 1 I fv lwr tw nw vK voir 1 QR7 • r n m n m r e -AMENDMENT 4 28 March i975 M I L I TA RY S P EC I F IC AT IO N S E MI C ON D UC TO R DEVICE, TR A N S I S T O R TYPE 2N916 This a m en dm e n t forms a part of M I L - S - 1 9 5 0 0 / 2 7 1 A (N A Y Y ), dated 14 F e br u a r y 1964,


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    PDF MIL-S-19500/271A 2N916 L-S-l9500/271A 5961-N940) 271A 2N916

    Untitled

    Abstract: No abstract text available
    Text: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) 0Tc=25°c ^C8Q (V) Min ^GEO ^EBO (V) Min (V) Min 2N915 70 50 5 0.36 2N916 45 25 5 0.36 2N929 45 45 5 0.5 ^CM *C80 ^C B


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    PDF 2N915 2N916 2N929 2N930 BC109C BCY56 BCY57 BCY58 BCY58-10 BCY58-7

    2M1711

    Abstract: 2N915 2N1613 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N718A 2N720A
    Text: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptal mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 VCE(SAT) hFE0 c h (MHz) ts tOFF IC/IB MNMAX (•A) <V) MAX 50* 80 50 40 40/120 40/50/200 50/200 150 150 10 10


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    PDF 2N718A 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2M1711 2N1613

    BC107C

    Abstract: BC107 BC108A 2N915 bc109 BCY56 2N916 2N929 2N930 BC107A
    Text: an Package Transistors NPN Maximum Ratings Type No. Pd (W) Tc=25"c Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2N915 70 50 5' 0.36 2N916 45 25 5 0.36 0.2 2N929 45 45 5 0.5 0.03 (A) 'cM 'cBO (A)


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    PDF 2N915 2N916 2N929 2N930 BC109C BCY56 BCY57 BCY58 BCYS8-10 BCY58-7 BC107C BC107 BC108A bc109 BC107A

    BCY59-9

    Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
    Text: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0


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    PDF 2N720 2N720A 2N912 2N2S09 2N2368 2N2369 2N2369A 2N2615 2N2616 2N783 BCY59-9 bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


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    PDF DMB105 2C3904 2N915 2N916 2N2716* 2N2923 2N2924 2N2925 2N2926* 2N3390* 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    2N2598

    Abstract: 2N2599 2K25 2N4260 N2591 2N2603 2n5179 2N915 2N2459 2N2460
    Text: 8134693 SEMICOA Type NPN PNP 2N260JL 2N2521 2N2602 2N2522 2N2603 2N2459 2N2590 2N2460 2N2591 2N2461 2N2592 2N2462 2N2593 2N2515 ~2N2595 2N2596 2N2516 2K2597 2N2518 2N2598 2N2599 2N2519 : 2N260Ó 2N2599R 2N2600A ' Type NPN 40 400 400 400 400 400 400 400 400


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    PDF PD13D 2N260JL 2N2521 2N2602 2N2522 2N2603 2N2459 2N4260 2N4261 2N2615 2N2598 2N2599 2K25 N2591 2N2603 2n5179 2N915 2N2459 2N2460

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    2n2222 fairchild

    Abstract: BFR37 2N915 2n930 price P346A 2N2369 2N2369A 2N914 BC119 BSX20
    Text: Fairchild Semiconductors Semicondti^Hn Silicon Small Signal Transistors NPN Silicon High Speed Saturated Switching Transistors Metal Can TO IS R EFER EN C E T A B L E For medium speed - see General Purpose Section. C H A R A C T E R IS T IC S @ 25"C M A X R A T IN G S


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    PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2n2222 fairchild BFR37 2N915 2n930 price P346A BC119

    2N859

    Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385


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    PDF 2n3117 to-18 2n4383 2n4384 2n4385 2n4386 CBR30 0000S23 2N859 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


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    PDF 2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720

    transistor t05

    Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
    Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A


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    PDF 5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C