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    Microchip Technology Inc 2N5285

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    2N5285 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5285 API Electronics Short form transistor data Short Form PDF
    2N5285 API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF
    2N5285 API Electronics Short form transistor data Short Form PDF
    2N5285 Diode Transistor NPN Transistor Selection Guide - TO-111 and TO-61 Packages Scan PDF
    2N5285 Diode Transistor Transistor Short Form Data Scan PDF
    2N5285 General Transistor NPN Power Transistors Scan PDF
    2N5285 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5285 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5285 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5285 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5285 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5285 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5285 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5285 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5285 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5285 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5285 Unknown Transistor Replacements Scan PDF
    2N5285 New England Semiconductor NPN TO-61 / TO-111 Transistor Scan PDF
    2N5285 New England Semiconductor NPN Transistors, TO-61 / TO-111 Scan PDF
    2N5285 PPC Products Transistor Short Form Data Scan PDF

    2N5285 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    Untitled

    Abstract: No abstract text available
    Text: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152


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    PDF A4403SS 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


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    PDF 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879

    2N5006

    Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
    Text: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N52B9 2N5285 2N534E 2N5347 2N5348 2N5317 2N5319 2N5731 2N5957 WALTA

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5


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    PDF 0-20A 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957 2N6128

    2N4116

    Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
    Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850


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    PDF fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658

    2N5075

    Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
    Text: GENERAL TRANSISTOR CORP 34E D 3^50001 GOQGQfe.T 7 * ~ F - 3 3 ~ 0 l General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 NPN Power Transistors ISOLATED COLLECTOR 1C


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    PDF b80-100V 2N5006 2N5008 2N5288 2N5284 2N5285 2N5346 2N5347 2N5348 2N5349 2N5075 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957

    2N5730

    Abstract: 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285
    Text: Il 000012a NPNTO-111 isolated collector (cont’d) ZTB483&#39;52 D IO D E T R A N S I S l U K C O IN C . 8 4 D ~Ô Ô l2 6“ D1QDE TRâ(\)515TQB CQ„ JWC. (201) 666*0400 • Telex; 139-385 • Outslde NY & NJ area cali TOLL FREE 800-526-4581 FAX No. 201-675-5863


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    PDF NPNTO-111 2T548352 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5730 2N5285

    2N5084

    Abstract: 2N5284 FL-35A 2N4115 2N5085 2N4116 2N5002 2N5004 2N5083 2N5285
    Text: llP NPMTO-111 I s o la t e d c n llB n t n . - lt e n n . - r t ' ^ 84aa_^ 2 DIQDE TRANSISTOR CO IN C . l a f l H B 3 S E 0G0Q13S □ I Ö4D 0 0 1 2 8 ^ ——— t D1DDE TRANSISTOR CQ.J(\IC. FA X ^ 201 ^ 6 75 58 83 139-385 * 0u,8lde N V 4 N J area ca|l T O LL F R EE 800-526-4581


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    PDF NPWTO-111 fl35a Tfidf\l515T0R 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 FL-35A 2N5285

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2N4115

    Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
    Text: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP


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    PDF NPWTO-111 fl35a 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346

    2N5076

    Abstract: 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N4116
    Text: NEIII ENGLAND SEMICONDUCTOR STE D • b5b4^3 □□□□OSa QflT B i NES ' 7 2N5006 VCEO SUS (V) 1C (MAX) W tlFE IC/VCE (min-max ® A/V) VBE (SAT) ® IC/lB (V @A/A) TC = 100 °C (Watts) 1 = 1 B6C (A ® V) ff tON @ ICJlB tOFF ® IC/lB (MHz) (¿is @ A/A)


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N5289 1S012O 2N5285 2N5346 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N4116

    2N4116

    Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
    Text: NEW E N G L A N D S E M I C O N D U C T O R STE D • b5b4^3 OOODOSfi DAT * N E S 3 VCEO SUS (V) 1C (MAX) W - / NPN TO-61 = 10-20A VcEO(SUS) = 8 0-1 00V fT = 10-50 MHz lc (M A X ) Type No. 3 ISOLATED COLLECTOR Case 8 0 6 tlFE 0 IC/VCE (mln-max @ A/V) VCE (SAT)


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N5289 2N5284 2N5285 2N5346 2N5347 2N4116 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I ELECTRONICS INC Ëb 26C 00224 D T-33-0\ D eT| 0DM35T5 D0D0S54 3 COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No C ase 2N5002 T0111/1 TO111/1 TO -3 TO -3 T O -3 TO 111/1 TO 111/1 TO- 2N5004 2N5067 2N5068 2N5069


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    PDF T-33-0\ 0DM35T5 D0D0S54 2N5002 2N5004 2N5067 2N5068 2N5069 2N5074 2N5075

    2N3026

    Abstract: 2N3025 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150
    Text: I _ 12 E tljíJ E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No C ase 2N5002 TO 111/1 TO111/1 TO111/1 TO 111/1 TO 111/1 TO 111/1 TO -5 TO-5 TO 111/1 TO 111/1 TO -39 TO -39 TO-39 T O -39 TO -66 TO -66 TO-66 TO -66 TO-5


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    PDF 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150 2N3021 2N3022 2N3026 2N3025

    2N5239

    Abstract: 2N5157 2N5202 2N5218 2N5237 2N5238 2N5240 2N5241 2N5250 2N5251
    Text: • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN hf: E V OLTAGE S NPN SAT . V O LT A GES M 3X. CASE V CE VCE V CB V EB •c (V) (A) M in. Max. (A) •b (A) V CE (V) V BE (V) 2N5157 TO-3 700 500 6 5 1 30 90 1 0.7 2.5 2 2N5202 TO-66 100 50


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    PDF 2N5157 2N5202 2N5218 2N5237 2N5238 2N5239 2N5240 2N5241 2N5250 O-114 2N5251

    2N3021

    Abstract: 2N3025 2N3026 2N5076 TO111 package 2N5002 2N5004 2N5074 2N5075 2N5077
    Text: 12 u l í u ELECTRONICS, INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No C ase 2N5002 T0111/1 TO111/1 TO111/1 TO 111/1 TO 111/1 TO 111/1 TO -5 TO-5 TO 111/1 TO 111/1 TO -39 TO -39 TO-39 T O -39 TO -66 TO -66 TO-66 TO -66 TO-5 TO-66 TO-66 TO-66


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    PDF 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150 2N3021 2N3022 2N3025 2N3026 TO111 package

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N3025

    Abstract: No abstract text available
    Text: iH e le c t r o n i c s in c . COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No Case 2N5002 TO111/1 TO111/1 TO111/I TO111/1 TO111/1 TO111/I TO-5 TO-5 TO111/1 TO111 /I TO-39 TO-39 TO-39 TO-39 TO-66 TO-66 TO-66 TO-66 TO-5 TO-66 TO-66 TO-66 TO-66 TO-66


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    PDF 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 O111/1 O111/I 2N3025