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    2N3906 EQUIVALENT TRANSISTOR Search Results

    2N3906 EQUIVALENT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2N3906 EQUIVALENT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SHD431006 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 678, REV. - PNP SWITCHING TRANSISTOR SHD431006S - S-100 JANTX Screening • Hermetic, Ceramic Package • Electrically Equivalent to 2N3906 • Surface Mount Package Absolute Maximum Ratings* Symbol


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    PDF SHD431006 SHD431006S S-100 2N3906

    2N3906 JEDEC

    Abstract: 2N3906 2N3906 MOTOROLA 2n3906 equivalent 2N3905 2N3905 MOTOROLA 2N3906 OR EQUIVALENT 2N3906 APPLICATION 2N3905 Equivalent transistor 2N3905
    Text: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


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    PDF 2N3905/D 2N3905 2N3906* 2N3906 JEDEC 2N3906 2N3906 MOTOROLA 2n3906 equivalent 2N3905 2N3905 MOTOROLA 2N3906 OR EQUIVALENT 2N3906 APPLICATION 2N3905 Equivalent transistor 2N3905

    2N3905 MOTOROLA

    Abstract: 2N3906 2N3905 2N3906 MOTOROLA 2n3906 equivalent 2N3906 JEDEC 2N3906 APPLICATION 2N3905 Equivalent 2N3906 hie 1N916
    Text: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


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    PDF 2N3905/D 2N3905 2N3906* 2N3905/D* 2N3905 MOTOROLA 2N3906 2N3905 2N3906 MOTOROLA 2n3906 equivalent 2N3906 JEDEC 2N3906 APPLICATION 2N3905 Equivalent 2N3906 hie 1N916

    2N3905 MOTOROLA

    Abstract: 2N3906 motorola MMBT3906 sot-23 2N3905 Equivalent 728p model of 2n3906 1N916 2N3905 MMBT3906 MMPQ3906
    Text: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


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    PDF 2N3905/D 2N3905 2N3906* 2N3905 MOTOROLA 2N3906 motorola MMBT3906 sot-23 2N3905 Equivalent 728p model of 2n3906 1N916 2N3905 MMBT3906 MMPQ3906

    2N3906RL1

    Abstract: 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906D 3906 TO-92 2N3906 ON 2N3906 pin diagram
    Text: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous


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    PDF 2N3906 r14525 2N3906/D 2N3906RL1 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906D 3906 TO-92 2N3906 ON 2N3906 pin diagram

    C2N3906

    Abstract: 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906
    Text: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous


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    PDF 2N3906 C2N3906 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906

    2N3906 pin diagram

    Abstract: 2N3906 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906D 2N3906-G 2N3906G 2N3906RL1G
    Text: 2N3906 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage


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    PDF 2N3906 2N3906/D 2N3906 pin diagram 2N3906 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906D 2N3906-G 2N3906G 2N3906RL1G

    2N3906-G

    Abstract: 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906
    Text: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 40 Vdc Collector − Base Voltage


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    PDF 2N3906 2N3906/D 2N3906-G 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906

    2N3906RL1

    Abstract: 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906D 2N3906-G 2N3906 pin diagram 2N3906 JEDEC 2N3906 2N3906RL1G
    Text: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 40 Vdc Collector − Base Voltage


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    PDF 2N3906 2N3906/D 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906D 2N3906-G 2N3906 pin diagram 2N3906 JEDEC 2N3906 2N3906RL1G

    D2N3906

    Abstract: 2N3906-G 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906
    Text: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available* 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage


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    PDF 2N3906 D2N3906 2N3906-G 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906

    2n3906 equivalent transistor

    Abstract: 10KO 1N916 2N3906
    Text: 2N3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 625 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = -200mA • Pb free product are available :99% Sn above can meet RoHS


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    PDF 2N3906 -200mA MIL-STD-750, 02grams 2n3906 equivalent transistor 10KO 1N916 2N3906

    2n3906 on

    Abstract: No abstract text available
    Text: 2N3906 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available* 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage


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    PDF 2N3906 2N3906/D 2n3906 on

    pin diagram details of 2n3906

    Abstract: 2N3906 pin diagram 2N3906 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906-G asme y14.5m to-92 2N3906RL1G
    Text: 2N3906 Preferred Device General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage


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    PDF 2N3906 pin diagram details of 2n3906 2N3906 pin diagram 2N3906 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906-G asme y14.5m to-92 2N3906RL1G

    2N3906G

    Abstract: 2N3906 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906D 1N916 2N3906-G
    Text: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 40 Vdc Collector − Base Voltage


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    PDF 2N3906 2N3906/D 2N3906G 2N3906 2N3906RL1 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906D 1N916 2N3906-G

    2N3906

    Abstract: 2n3906 specification 2N3906 APPLICATION 2n3906 equivalent LM2698 D12 vishay
    Text: 1.0 Design Specifications Inputs Outputs #1 VinMin=5.0 Vout1=16 VinMax=5.0 Iout1=0.160 2.0 Design Description This circuit consists of a power section optimized to deliver a total of 160mA to the LED array. The first string is controlled by the feedback loop to 20mA. The remaining strings are


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    PDF 160mA LM2698 LM2698 CSP-9-111S2) CSP-9-111S2. 2N3906 2n3906 specification 2N3906 APPLICATION 2n3906 equivalent D12 vishay

    PNP 2n3906 331

    Abstract: 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor
    Text: Application Note 137 May 2012 Accurate Temperature Sensing with an External P-N Junction Michael Jones Introduction Temperature Sensing Theory Many Linear Technology devices use an external PNP transistor to sense temperature. Common examples are LTC3880, LTC3883 and LTC2974. Accurate temperature


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    PDF LTC3880, LTC3883 LTC2974. an137f AN137-12 PNP 2n3906 331 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor

    XL1225 equivalent

    Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
    Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055


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    PDF 2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent

    2N3906 MOTOROLA

    Abstract: 2n3906 REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT BC237 equivalent transistor 2N1711 2N3905 Equivalent 2N1893 equivalent applications of Transistor BC108 BC141 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage


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    PDF 2N3905 2N3906* 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3906 MOTOROLA 2n3906 REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT BC237 equivalent transistor 2N1711 2N3905 Equivalent 2N1893 equivalent applications of Transistor BC108 BC141 equivalent

    2n3906 equivalent transistor

    Abstract: TRANSISTOR S2A 1N916 2N3906 MMDT3906 SC70-6L marking code nt amplifier
    Text: MMDT3906 DUAL SURFACE MOUNT PNP TRANSISTORS This device contains two electrically-isolated 2N3906 PNP transistors. The two transistors have well matched hFE and are encapsulated in an ultrasmall SOT-363 SC70-6L package. This device is ideal for portable


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    PDF MMDT3906 2N3906 OT-363 SC70-6L) MMDT3906 T/R13 2n3906 equivalent transistor TRANSISTOR S2A 1N916 SC70-6L marking code nt amplifier

    2N3906

    Abstract: 2N3905 Equivalent 2N3905 2N3906 motorola 2N3905 MOTOROLA tr 2n3906 TR 3906 PNP SM 2n3906 equivalent 2904S
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon ‘ Motorola Preferred Device CO L LE C T O R 3 1 EM ITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle cto r- Emitter Voltage VCEO 40 Vdc C o lle cto r- Base Voltage


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    PDF 2N3905 2N3906* O-226AA) CHARACTE70 2N3906 2N3905 Equivalent 2N3906 motorola 2N3905 MOTOROLA tr 2n3906 TR 3906 PNP SM 2n3906 equivalent 2904S

    2N3906 JEDEC

    Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N3906 JEDEC 2N3906 hie 2N3905 Equivalent 2n3906 equivalent 2n3906 npn

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N 3906* PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V oltag e VCEO 40 V dc C o lle c to r-B a s e V oltag e


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    PDF 2N3905/D 2N3905

    GES6220

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device 'F E bvceo VCE sat Type @10mA(V) Min. Max. @ lc(mA) I I • m 1 GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 NPft


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 QES6004- GES6004: GES6220 GES6001

    2n3906 equivalent transistor

    Abstract: 2N3906 samsung
    Text: {SAMSUNG SEMICONDUCTOR INC MPS6517 14E 0 | 71fa.ima 0007354 t, | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: Veto =40V * Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=250C) Characteristic


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    PDF MPS6517 625mW T-29-21 2N3906 2n3906 equivalent transistor 2N3906 samsung