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    2N3771 POWER TRANSISTOR Search Results

    2N3771 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    2N3771 POWER TRANSISTOR Price and Stock

    Microchip Technology Inc 2N3771

    Power Bipolar Transistor, 30A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-204AA, 2 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N3771
    • 1 -
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    • 100 $127.6
    • 1000 $127.6
    • 10000 $127.6
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    2N3771 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3771 ssl

    Abstract: 2N3771
    Text: 2N3771 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMP. 1 of 1 Home Part Number: 2N3771 Online Store 2N3771 Diodes NPN PLANAR SILIC O N TRANSISTO R( AUDIO PO W ER AM PLIF IER Transistors DC TO DC C O NVERTER


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    PDF 2N3771 com/2n3771 2N3771 2n3771 ssl

    2N3771G

    Abstract: 2N3771 2N3772 2N3772G 2N6257
    Text: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability


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    PDF 2N3771, 2N3772 2N3771 2N3771 O-204AA 2N3771G 2N3772 2N3772G 2N6257

    2N3772 motorola

    Abstract: 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771
    Text: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N3771* 2N3772 High Power NPN Silicon Power Transistors *Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. 20 and 30 AMPERE


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    PDF 2N3771/D* 2N3771/D 2N3772 motorola 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771

    2N3771

    Abstract: 2N3772G 2N3772 1N5825 2N3771G 2N6257 MSD6100 2N3771 power transistor
    Text: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http://onsemi.com • Forward Biased Second Breakdown Current Capability


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    PDF 2N3771, 2N3772 2N3771 2N3771 2N3771/D 2N3772G 2N3772 1N5825 2N3771G 2N6257 MSD6100 2N3771 power transistor

    Untitled

    Abstract: No abstract text available
    Text: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http://onsemi.com • Forward Biased Second Breakdown Current Capability


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    PDF 2N3771, 2N3772 2N3771 2N3771 2N3771/D

    2N3771

    Abstract: 2N3772 2N3771 power circuit 2N3772 APPLICATIONS
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 2N3771 power circuit 2N3772 APPLICATIONS

    2N3772

    Abstract: 2N3771
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    PDF 2N3771 2N3772 2N3771, 2N3772 2N3771

    2N3772

    Abstract: 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40

    2N3771

    Abstract: 2N3772 P003N
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 P003N

    2N3771

    Abstract: 2N3772 transistor 2n3772
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    PDF 2N3771 2N3772 2N3771, 2N3772 2N3771/2N3772 P003F 2N3771 transistor 2n3772

    Untitled

    Abstract: No abstract text available
    Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    PDF 2N3771 2N3772 2N3771, 2N3772

    2N3772

    Abstract: 2N3771
    Text: 2N3771 2N3772  HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.


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    PDF 2N3771 2N3772 2N3771, 2N3772 2N3771

    2N3772

    Abstract: 2N3771 2N3771 power circuit adc ic
    Text: TECHNICAL DATA 2N3771 JANTX, JTXV 2N3772 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/413 NPN HIGH-POWER SILICON TRANSISTORS MAXIMUM RATINGS Ratings Symbol 2N3771 2N3772 Units 40 50 7.0 7.5 30 60 100 7.0 5.0 20 Vdc Vdc Vdc Adc Adc W W Collector-Emitter Voltage


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    PDF 2N3771 2N3772 MIL-PRF-19500/413 2N3771 2N3772 O-204AA) 2N3771 power circuit adc ic

    2N3771

    Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
    Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON


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    PDF 2N3771* 2N3772 2N3771 2N3771/D 2N3771 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771

    1N5825

    Abstract: 2N3771 2N3772 2N6257 MSD6100
    Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device • Forward Biased Second Breakdown Current Capability


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    PDF 2N3771* 2N3772 2N3771 r14525 2N3771/D 1N5825 2N3771 2N3772 2N6257 MSD6100

    2n3772

    Abstract: 2n3771 2N3772 APPLICATIONS
    Text: SavantIC Semiconductor Product Specification 2N3771 2N3772 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power and high current capability APPLICATIONS ·For linear amplifiers, series pass regulators and inductive switching applications


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    PDF 2N3771 2N3772 2N3771 2n3772 2N3772 APPLICATIONS

    TEXAS 2N3771

    Abstract: 2h37 STR 5012 lc 5012 m
    Text: TYPES 2N3771, 2N3772 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR UNTUNED POWER-AMPLIFIER APPLICATIONS ¡5 3 m V> H K> 150 W at 25°C Case Temperature 30-A Rated Continuous Collector Current 2N3771 20-A Rated Continuous Collector Current (2N3772)


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    PDF 2N3771, 2N3772 2N3771) 2N3772) 2N3771 2N3772 TEXAS 2N3771 2h37 STR 5012 lc 5012 m

    Untitled

    Abstract: No abstract text available
    Text: rz 7 ^7# SGS-m0MS0N 2N3771 [ïfflOeœilLHera «® 2N3772 HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear


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    PDF 2N3771 2N3772 2N3771, 2N3772 2N3771/2N3772 P003F

    2N3772

    Abstract: 2N3771 2N3772 APPLICATIONS S200 2N3771 power transistor transistor 2n3772
    Text: HIGH POWER NPN SILICON POWER TRANSISTORS NPN 2N3771 2N3772 General-purpose linear amplifiers,series pass regulatorsand inductive switching Applications. Boca Semiconductor Corp. BSC fe a tu re s * Low Coliector-Emitter Saturation Voltagev ce<sat = 4 0 v M ax) @ lc = 30 A. >b = 6 0 A “ 2N3771


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    PDF 2n3771 2n3772 2N3772 Current-C771, 2N3772 APPLICATIONS S200 2N3771 power transistor transistor 2n3772

    3771

    Abstract: ot 409 transistor 2N3771 2N 3771
    Text: SGS-THOMSON 2N3771 2N3772 Kl gKLiM(s !0(gS HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended tor linear amplitiers and inductive switching applications.


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    PDF 2N3771 2N3772 2N3771, 2N3772 3771 ot 409 transistor 2N3771 2N 3771

    2n3772

    Abstract: 2N3771
    Text: r = T SG S-TH O M SO N dO i liLi©îi®iO©i 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TQ-3 metal case. They are intended for linear


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    PDF 2N3771 2N3772 2N3771, 2N3772 5C08820

    2N3771

    Abstract: 2N3772 RBE1
    Text: 2N3771 2N3772 NPN POWER TRANSISTOR Central Semiconductor Corp. JEDEC TO-3 CASE 145 Adams Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3771, 2N3772 ty p es a r e NPN s i l i c o n power t r a n s i s t o r s manu f a c t u r e d


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    PDF 2n3771 2n3772 2N3771, 2N3772 50kHz 2N3771 RBE1

    2N3771 power circuit

    Abstract: 2N3771 MBD5300 MSD6100
    Text: HIGH POWER 2N3771 NPN POWER TRANSISTORS 40 VOLTS 30 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch­ ing applications. Features: • Forward biased second breakdown current capability


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    PDF 2N3771 T0-204AA 2N3771 power circuit 2N3771 MBD5300 MSD6100

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N 3771* 2 N 3772 High Power NPN Silicon Power Transistors ‘ Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications.


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    PDF 2N3771/D 2N3771 2N3772 O-204AA