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    2N33 Search Results

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    2N33 Price and Stock

    Walsin Technology Corporation 0402N331J500CT

    CAP CER 330PF 50V C0G/NP0 0402
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    DigiKey 0402N331J500CT Digi-Reel 1,052,002 1
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    0402N331J500CT Cut Tape 1,052,002 1
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    0402N331J500CT Reel 1,050,000 10,000
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    TME 0402N331J500CT 59,630 1
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    Chip1Stop 0402N331J500CT Cut Tape 10,000
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    Walsin Technology Corporation 0402N330J500CT

    CAP CER 33PF 50V C0G/NP0 0402
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    DigiKey 0402N330J500CT Reel 200,000 10,000
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    Newark 0402N330J500CT Cut Tape 10,680 10
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    Bristol Electronics 0402N330J500CT 2,780,000
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    TME 0402N330J500CT 140,394 1
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    Avnet Asia 0402N330J500CT 50,000 12 Weeks 10,000
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    Chip1Stop 0402N330J500CT Cut Tape 7,500
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    IBS Electronics 0402N330J500CT 40,000 40,000
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    Susumu Co Ltd RG2012N-332-W-T1

    RES SMD 3.3K OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-332-W-T1 Reel 73,000 1,000
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    Nisshinbo Micro Devices RP102N331B-TR-FE

    IC REG LINEAR 3.3V 300MA SOT23-5
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    DigiKey RP102N331B-TR-FE Digi-Reel 1,842 1
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    Rochester Electronics RP102N331B-TR-FE 12,000 1
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    Central Semiconductor Corp 2N3392-PBFREE

    TRANS NPN 25V TO92-3
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    DigiKey 2N3392-PBFREE Bulk 1,377 1
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    2N33 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N33 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N33 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N33 Unknown GE Transistor Specifications Scan PDF
    2N33 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N33 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N33 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N33 RCA RCA Transistor and Diode Data Scan PDF
    2N330 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N330 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N330 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N330 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N330 Unknown GE Transistor Specifications Scan PDF
    2N330 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N330 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N330 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N330 Unknown Vintage Transistor Datasheets Scan PDF
    2N330 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3300 Central Semiconductor Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.5 / Hfe=35min / fT(Hz)=800M / Pwr(W)=0.8 Original PDF
    2N3300 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.5 / Hfe=35min / fT(Hz)=800M / Pwr(W)=0.8 Original PDF
    2N3300 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    ...

    2N33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    2N3300

    Abstract: No abstract text available
    Text: 2N3300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3300 O205AD) 10/10m 1-Aug-02 2N3300

    2N4041

    Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


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    PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4041 2N4127 2N5016 2N5102 2N5108 2N5421

    2n261 rca

    Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


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    PDF 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 BC817 2n261 rca 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A

    2N3480

    Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849


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    PDF E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712

    SRK-2001

    Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


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    PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 SRK-2001 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 solitron transistors 2N5016

    Untitled

    Abstract: No abstract text available
    Text: 2N3327 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)65 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.


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    PDF 2N3327 Freq100M StyleStR-10 Code3-12

    Untitled

    Abstract: No abstract text available
    Text: 2N3368 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A)10m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150# I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2N3368

    Untitled

    Abstract: No abstract text available
    Text: 2N3365 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A)4.0m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150# I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2N3365

    JFET 2N3369

    Abstract: 2n3369
    Text: 2N3369 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A)2.5m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150# I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2N3369 JFET 2N3369

    2N335

    Abstract: No abstract text available
    Text: TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR U LL E T IN NO. DL-S 591038. M A R C H 1959 Beta From 36 to 90 Specifically designed for high gain at high temperatures nw chw ical data W eld ed ca se w ith g lass-to -m etal h erm etic seal betw een ca se an d lead s. U n it w eig h t is ap p ro x im a te ly


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    PDF 2N335

    2N3330

    Abstract: 2N3332 2N3331 2n3329
    Text: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS


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    PDF 2N3329 2N3332 2K3329 2N3330 2N333I 2N3331

    2N3967

    Abstract: 2N3369 2N3370 2N3460 2N3821 2N3822 2N3967A 2N3968 NJ16
    Text: INTER P E T C OR P EbE D • 4a2Lflflö 0 0 0 0 1 6 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiom V<8« GSS Ig nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 -4 0 -4 0 -5 0 -5 0 -5 0 -1 -1 -1 -1 -1 2N3821


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    PDF 2N3369 2N3370 2N34S8 N3459 2N3460 2N5362 2N5363 2N5364 2N3967 2N3821 2N3822 2N3967A 2N3968 NJ16

    2N3702 NATIONAL SEMICONDUCTOR

    Abstract: national 2N3392 NATIONAL SEMICONDUCTOR TO-92 2N3393 2N3702 BC338/BC328 2N3391A 2N3392 PN3565 2N4124
    Text: n NAIL SEMICOND -[DISCRETE t.3E D • bSD113a Q03TS33 b7ti Devices V CE0 sust (Volts) Min 25 NPN PNP mi mA NF (dB) (MHz) Min mA Max 5.0 P D (Amb) Package (mW) @25 °C Max Min Max 2N3391A 100 250 500 2.0 120 Typ. 2.0 2N3392 100 150 300 2.0 120 Typ. 2N3393


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    PDF bS0113D 003TS33 2N3391A T0-92 2N3392 2N3393 2N3415 2N4124 2N5172 BC238 2N3702 NATIONAL SEMICONDUCTOR national 2N3392 NATIONAL SEMICONDUCTOR TO-92 2N3393 2N3702 BC338/BC328 2N3391A 2N3392 PN3565 2N4124

    2N22A

    Abstract: 2N4271 2N3947 2N3326 2N3666
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


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    PDF 2n3302 to-18 2n3326 2n3388 2n3418 2n3419 n3420 2n3421 CBR30 0000S23 2N22A 2N4271 2N3947 2N3666

    2N3329

    Abstract: 2N3330 2N3331 2N3332 2N2843 "Analog Multipliers" 2N2608 2N2608JAN
    Text: S Siliconix P erform ance C u rves PC Se e Section 5 2N3330 • Small-Signal Amplifiers ■ Analog M u ltip liers ■ M odulators b e n e f it s Ease of Am plifier Design I q SS & Gfs Closely Specified 2N3331 ♦ABSO LUTE M A X IM U M R A TIN G S 25°C 2N3329


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    PDF 2N3329 2N3330 2N3331 2N3332 2N3329 2N3330 2N3331 2N3332 2N2843 "Analog Multipliers" 2N2608 2N2608JAN

    Q2T2905

    Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
    Text: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*


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    PDF 2N2060t 2N2223* 2N2223At 100/xA 2n2641 2n2640* 2N2639t 2n2644 2n2643* 2N2642I Q2T2905 SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806

    pnp 2N3906 beta

    Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
    Text: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION


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    PDF 2N3395 2N3396 2N3397 2N3398 2N2926 2N4401 2N4402 2N4403 MPS2713 MPS2714 pnp 2N3906 beta 2n4058 N3904 to-92hs D29E2-J1

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N3397

    Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3397 n3860

    D38S1-4

    Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


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    PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93

    2N2926

    Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3859A

    n3860

    Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 2N292

    2N3307 MOTOROLA

    Abstract: 2N3307 2N3308 GE-17
    Text: M O T OR OL A SC X S T R S /R F la E ° I b3t?2S l1 000^351 fe, | 2N3307 2N3308 CASE 20-03, STYLE 10 TO-72 TO-206AF M A X IM U M RATINGS Symbol 2N3307 2N3308 Unit VCEO 35 25 Vdc Colfector*Emitt6r Voltage Vc es 40 30 Vdc Collector-Base Voltage VCBO 40 30


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    PDF 2N3307 2N3308 2N3308 O-206AF) 2N3307 MOTOROLA GE-17