Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N3055 COLLECTOR CHARACTERISTIC CURVE Search Results

    2N3055 COLLECTOR CHARACTERISTIC CURVE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54H22/BCA Rochester Electronics LLC 54H22 - NAND Gate, Dual 4-Iinput, With Open-Collector Outputs - Dual marked (M38510/02307BCA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5409/BCA Rochester Electronics LLC 5409 - AND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/01602BCA) Visit Rochester Electronics LLC Buy
    5401/BDA Rochester Electronics LLC 5401 - NAND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/00107BDA) Visit Rochester Electronics LLC Buy
    5403/BCA Rochester Electronics LLC 5403 - NAND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/00109BCA) Visit Rochester Electronics LLC Buy

    2N3055 COLLECTOR CHARACTERISTIC CURVE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3055 malaysia

    Abstract: DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
    Text: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE sat = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.


    Original     		PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve

    2N3055

    Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2n3055 amplifier 2N3055 transistor data transistor 2n3055 MJ2955 TRANSISTOR Mj2955 power transistor mj2955 safe operating area
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com


    Original     		PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2n3055 amplifier 2N3055 transistor data transistor 2n3055 MJ2955 TRANSISTOR Mj2955 power transistor mj2955 safe operating area

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


    Original     		PDF 2N3055/D* 2N3055/D

    MJ2955 300 watts amplifier circuit diagram

    Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • http://onsemi.com


    Original     		PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR

    2N3055

    Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2n3055 pnp 2N3055 power circuit 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 2N3055-D 2n3055 circuit 2n3055 application
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


    Original     		PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2n3055 pnp 2N3055 power circuit 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 2N3055-D 2n3055 circuit 2n3055 application

    2N3055 power amplifier circuit

    Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPAN
    Text: Complementary Silicon Power Transistors NPN 2N3055 * PNP MJ2955 * . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — • *ON Semiconductor Preferred Device


    Original     		PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPAN

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com


    Original     		PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055

    2N3055 power circuit

    Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 JAPAN 2n3055 equal DC variable power with 2n3055 2N3055 MJ2955 2n3055 circuit mj2955
    Text: ON Semiconductort NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *ON Semiconductor Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage —


    Original     		PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 JAPAN 2n3055 equal DC variable power with 2n3055 2N3055 MJ2955 2n3055 circuit mj2955

    2n3055

    Abstract: 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 MJ2955 300 watts amplifier
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


    Original     		PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier

    2n3055

    Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


    Original     		PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram

    2N3055 MOTOROLA

    Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power transistor 2n3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 2N3055 power circuit
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


    Original     		PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power transistor 2n3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 2N3055 power circuit

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − •


    Original     		PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit

    2N3055G

    Abstract: MJ2955 2n3055 200 watts amplifier diagram MJ2955G OF transistor 2n3055 to-3 package MJ-20 TO-204AA transistor 2N30 2N3055 MJ2955 transistor npn 2n3055g
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −


    Original     		PDF 2N3055 MJ2955 O-204AA 2N3055G MJ2955 2n3055 200 watts amplifier diagram MJ2955G OF transistor 2n3055 to-3 package MJ-20 TO-204AA transistor 2N30 transistor npn 2n3055g

    200 Ampere power transistor

    Abstract: 2n3055 malaysia 2n3055 collector characteristic curve 2N3055 curve 2N3055 NPN Transistor 2N3055 2n3055 TRANSISTOR 530 TRANSISTOR 2n3055 2n3055 Power Transistor NPN
    Text: Silicon Power Transistor Features: • • • • Power dissipation - PD = 115W at TC = 25°C. DC current gain hFE = 20 ~ 70 at IC = 4.0A. VCE Sat = 1.1V (maximum) at IC = 4.0 A, IB = 400mA. Designed for use in general-purpose amplifier and switching applications.


    Original     		PDF 400mA. 2N3055 200 Ampere power transistor 2n3055 malaysia 2n3055 collector characteristic curve 2N3055 curve 2N3055 NPN Transistor 2N3055 2n3055 TRANSISTOR 530 TRANSISTOR 2n3055 2n3055 Power Transistor NPN

    2N3055 power amplifier circuit

    Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 2n3055 circuit 2N3055 power circuit 2N3055 typical applications 2N3055-1 TRANSISTOR 2n3055 TRANSISTOR MJ2955
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2 N3 0 5 5 * Com plem entary Silicon Power Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • ‘ Motorola Preferred Device


    OCR Scan     		PDF 2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 2n3055 circuit 2N3055 power circuit 2N3055 typical applications 2N3055-1 TRANSISTOR 2n3055 TRANSISTOR MJ2955

    MJ2955 TRANSISTOR

    Abstract: pnp transistor 2N3055 2n3055 collector characteristic curve 2N3055 Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve
    Text: SOLID STATE INC. 46 FARRAND STR EE T BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com COMPLEMENTARY SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching applications NPN PNP 2N3055 MJ2955 FEA TU RES: * Power Dissipation - PD = 115W @ Tc = 25°C


    OCR Scan     		PDF 2N3055 MJ2955 2N3055 MJ2955 MJ2955 TRANSISTOR pnp transistor 2N3055 2n3055 collector characteristic curve Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve

    RCA-2N3055

    Abstract: rca 2n3055 2N3055 2N3055 typical applications 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator RCA 2N3055 transistor 2n3055 RCA data 2N3055 RCA
    Text: ÏÏÏ 3875081 G E SOLID STATE DE •3 Û7 SQ Û1 0Qi7J.bc! 5 01E 17352 D ì~ T -3 3 -/3 General-Purpose Power Transistors_ » 2N3055 File Number 1699 General-Purpose Power Transistor Broadly Applicable Devices for Industrial and Commercial Use Features:


    OCR Scan     		PDF 2N3055 RCA-2N3055 2N3055. for2N3055. rca 2n3055 2N3055 2N3055 typical applications 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator RCA 2N3055 transistor 2n3055 RCA data 2N3055 RCA

    2n3055

    Abstract: 2N3055M 2n3055 collector characteristic curve MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 curve 2n3055 application note 2n3055 amplifier 2N3055/MJ2955 MJ2955
    Text: M m ospec COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A * VCE sat - 1 . 1 V (Max.) @ lc = 4.0 A, lB = 400 mA


    OCR Scan     		PDF 2N3055 MJ2955 2N3055M 2n3055 collector characteristic curve MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 curve 2n3055 application note 2n3055 amplifier 2N3055/MJ2955 MJ2955

    rca 2n3055

    Abstract: SN3055 2n3055 2N3055 series voltage regulator 2n3055 voltage regulator RCA-2N3055 2N3055 RCA 2n3055 collector characteristic curve power transistor 2n3055 RCA 2N3055 transistor
    Text: Ïïî 38750.81 G E SOLID STATE DË“| 3 f l 7 S a â l 0 1E OQiTJòd 17352 D 5 | \~ T ~ 3 3 - / 3 General-Purpose Power * 2N3055 File Number 1699 General-Purpose Power Transistor


    OCR Scan     		PDF 3fl750Ã 2N3055 RCA-2N3055 2N3055. 2N3055 SN3055. rca 2n3055 SN3055 2N3055 series voltage regulator 2n3055 voltage regulator 2N3055 RCA 2n3055 collector characteristic curve power transistor 2n3055 RCA 2N3055 transistor

    2n3055 motorola

    Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N3055/D NPN 2N 3055* C om plem entary Silicon Pow er Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • 'Motorola Preferred Device DC Current Gain — hpE = 2 0 -7 0 @ lc = 4 Adc


    OCR Scan     		PDF by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055

    J2955

    Abstract: 2n3055 motorola transistor 2N 3055 st 2n3055 2n 3055 2N3055 ST 2N3055-1 adc 305-5 Motorola 3055 2n 3055 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA I1DM 2N 3055* Com plem entary Silicon Power Transistors PNP . . . designed for general-purpose switching and amplifier applications. • • • •Motoroli Piefm ed Devtoe DC Current Gain — hFE = 2 0 -7 0 @ lc = 4 Adc


    OCR Scan     		PDF J2955 2N3055 J2955 2n3055 motorola transistor 2N 3055 st 2n3055 2n 3055 2N3055 ST 2N3055-1 adc 305-5 Motorola 3055 2n 3055 transistor

    2n3055 collector characteristic curve

    Abstract: 2N3055 curve
    Text: T-33- 13 Power Transistors 2N3055 File Number HARRIS SEMICOND SECTOR 27E D • M302271 Q D l ^ b 1699 5 ■ HAS G eneral-Purpose Power Transistor Broadly A pplicable Devices for Industrial and Commercial Use Features: ■ H igh gain at high current ■ Low S aturation Voltage: V'cetsaf < 1.1 V, @ ic= 4 A, I b=0.4 A


    OCR Scan     		PDF 2N3055 M302271 2N3055 2n3055 collector characteristic curve 2N3055 curve

    2N6569

    Abstract: st 2n3055 2N3055 2N6594
    Text: ¿2&M0SPEC NPN SILICON POWER TRANSISTOR The 2N6569 is a general-purpose, EPIBAS power transistor designed for low voltage amplifier power switching applica­ tions. FEATURES: * Safe Operating Area- Full Power Rating to 40V * EPIBASE Performance in Gain and Speed


    OCR Scan     		PDF 2N6569 2N6594 2N3055 st 2n3055 2N6594

    TIP 2n3055

    Abstract: TIP 3055 transistor Amp 3055 of 2n3055 tip 2955 transistor TIP 3055 motorola power transistor 2N3055 M 3055 power transistor 2955 transistor transistor 3055
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA u d ii TIP 3055 Com plem entary Silicon Power Transistors PNP TIP 2955 . . . designed for general-purpose switching and amplifier applications. • • • DC Current Gain — hpg - 2 0 -7 0 @ Iq - 4.0 Adc Collector-Emitter Saturation Voltage — VcE sat " 1 -1 Vc|c (Max) @ Ic = 4.0 Adc


    OCR Scan     		PDF