TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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semicoa 2N2222A
Abstract: 2N2222 die CP2222A SD2222A 2c2222
Text: Data Sheet No. CP2222A 2N2219A 2N2222A Chip Type 2C2222AKV Geometry 0400 Polarity NPN REF: MIL-PRF-19500L/255 20 MILS E B 20 MILS Chip type 2C2222AKV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance
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CP2222A
2C2222AKV
2N2219A
2N2222A
MIL-PRF-19500L/255
MIL-PRF-19500L
2N2222A,
2N2222,
2N2219,
semicoa 2N2222A
2N2222 die
CP2222A
SD2222A
2c2222
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Untitled
Abstract: No abstract text available
Text: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to
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2N2219A
2N2222A
2N2219A
2N2222A
2N2219A)
2N2222A)
500mA,
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2N2222A 026
Abstract: TL 2N2222A npn transistor 2N2222A NCC1001
Text: NCC1001 SURFACE MOUNT DUAL MATCHED NPN TRANSISTORS • • • • H erm etic Ceram ic Package Screening to SX Level Available Electrical Specifications Sim ilar to 2N2222A G roup B and C Testing Available MAXIMUM RATINGS : Each t>ie Rating C ollector-Em itter Voltage
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NCC1001
2N2222A
NCC1001
2N2222A 026
TL 2N2222A npn transistor
2N2222A
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2n2222a surface
Abstract: MIL-S-19500 2N5794 dual npn 500ma 1G54 Transistor 2N2222A 2N2222A HCT720 2N2222A surface mount
Text: OPTEK Product Bulletin HCT720 May 1993 Surface Mount Dual NPN Transistor Type HCT720 Features • Surface mountable on ceramic or printed circuit board • Miniature package to minimize circuit board area required • Electrical performance similar to 2N2222A
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HCT720
HCT720
2N2222A
MIL-S-19500
2N2222A
MIL-S-19500/255
2N2222A.
100MHz
2n2222a surface
2N5794
dual npn 500ma
1G54
Transistor 2N2222A
2N2222A surface mount
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2N2222A
Abstract: NCC2222AUB 2n2222a to 92
Text: NCC2222AUB SURFACE MOUNT SMALL SIGNAL NPN TRANSISTORS • • • • Hermetic Ceramic Package Screening to SX Level Available Electrical Specifications Similar to 2N2222A Group B and C Testing Available MAXIMUM RATINGS TA = 25°C unless otherwise noted
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NCC2222AUB
2N2222A
NCC2222AUB
2N2222A
2n2222a to 92
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Untitled
Abstract: No abstract text available
Text: OPTEK Product Bulletin HCT720 May 1993 Surface Mount Dual NPN Transistor Type HCT720 Features • Surface mountable on ceramic or printed circuit board • Miniature package to minimize circuit board area required • Electrical performance similar to 2N2222A
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HCT720
HCT720
2N2222A
MIL-S-19500
2N2222A
MIL-S-19500/255
2N2222A.
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2N2222A
Abstract: NCC2222AUA
Text: NCC2222AUA SURFACE MOUNT SMALL SIGNAL NPN TRANSISTORS • • • • Hermetic Ceramic Package Screening to SX Level Available Electrical Specifications Similar to 2N2222A Group B and C Testing Available 4 PIN LCC MAXIMUM RATINGS TA = 25°C unless otherwise noted
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NCC2222AUA
2N2222A
NCC2222AUA
2N2222A
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Untitled
Abstract: No abstract text available
Text: p semrofl ¡J8BBBBB88& | M iwiHBBffi .rfHHHHHHHHMh. mssssP % » 1 1 I I ititn nnnn hhhhhhk-. ^88888 % # ><>niftBHhr 1 D a ta S h e e t No. C P 2 22 2 A $ id L SEMICONDUCTORS 2N2219A 2N2222A Chip Type 2C2222AKV Geometry 0400 Polarity NPN REF: MIL-PRF-19500L/255
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J8BBBBB88&
2N2219A
2N2222A
2C2222AKV
MIL-PRF-19500L/255
2C2222AKV
MIL-PRF-19500L
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s parameters of 2N2222
Abstract: 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit 2n2222a 2N2219
Text: M A X IM U M RATINGS Rating Symbol 2N 2219 2N2222 2N2218A 2N2219A 2N2222A Unit Vdc C o lle cto r-E m itte r Voltage v CEO 30 40 Collector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 6.0 Vdc m Adc C o lle ctor C u rrent — C ontinuous •c
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2N2222
2N2218A
2N2219
2N2219A
2N2222A
s parameters of 2N2222
2n2222 equivalent
2N2222 z parameters
2n2219 equivalent
2N2219A equivalent
equivalent of 2n2222
2n2222 test circuit
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2N2222A motorola
Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
Text: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc
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2N2219
2N2222
2N2218A
2N2219A
2N2222A
2N2222A motorola
equivalent transistor 2N2222
2n2222 equivalent
s parameters of 2N2222
equivalent of 2n2222
motorola 2N2219
2n2219 equivalent
2n2222 motorola
MOTOROLA 2n2222 TRANSISTOR
2N2218A 2N2219A motorola
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tl 2n2222
Abstract: 2N2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222
Text: N AMER PHILIPS/DISCRETE b'IE D • bbS3T31 OOEÛÜflb 12G I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -18 metal envelope w ith the collector connected to the case. They are primar ily intended for high speed switching. The 2 N 2 2 2 2 is also suitable for d.c. and v.h.f./u.h .f. amplifiers.
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bbS3T31
2N2222
2N2222A
2N2222A
100ms
tl 2n2222
2n2222 ti
2N2222 npn small signal current gain
2N2222 circuit
output impedance of 2N2222
2N2222, 2N2222A
Transistor 2N2222A
2n2222 test circuit
Metal 2n2222
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2N2217
Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
Text: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA
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2N2217
2N2222.
2N2218A,
2N2219A,
2N2221A,
2N2222A
2N2222A)
2N2218,
2N2221
KH 2222
ic TT 2222
ip 2222A
2N2218
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N2222A
Abstract: PW 2N 218A n2222a2 2N2219A ip 2222A
Text: S G S -T H O M S O N 2 N 2 2 1 8 A -2 N 2 2 1 9 A R fflD is œ iL iO ÏÏM iD g i 2 N 2 2 2 1 A -2 N 2 2 2 2 A HIGH SPEED SWITCHES D E S C R IP T IO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218A and 2N2219A and in Jedec
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2N2218A,
2N2219A,
2N2221A
2N2222A
2N2218A
2N2219A)
2N2222A)
2N2218A/2N2219A
2N2221A/2N2222A
N2222A
PW 2N
218A
n2222a2
2N2219A
ip 2222A
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Untitled
Abstract: No abstract text available
Text: REVISIONS L m ulticom p DCP # REV DESCRIPTION DRAWN DATE Effective: 7 / 8 / 0 2 * DCP No: 1398 CHECKD DATE RELEASED HO 12 2 /0 2 JWM 12 2 /0 2 DJC 12 2 /0 2 UPDATED TO ROHS COMPLIANCE EO 0 2 /0 3 /0 6 HO 2 /6 /0 6 HO 2 /6 /0 6 1262 B DOC. NO. SPC— F004
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2N2222A
300MHz
300jus,
2N2222A
35C0690
SPC-F004
SPC-F004
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2n2222 itt
Abstract: 2N2222A itt itt 2n2222 BSY86 BSY85 BSY83 itt 2N2222A 2N2219 transistor BSY84 2N2218A
Text: ITT Semiconductors NPN Transistors N P N S ilicon M edium Current Transistors Metal Can TO-39 or TO-18 . V CBo up to 75V. O u tlin e D raw ing H o. 66 ap plies fo r TO -39 ty p es . O u tlin e D raw ing N o. 65 ap plies fo r TO -18 ty p es . M ax. ratings
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2N2218
7785A
2N2218A
31275X
2N2219
27786X
2N2219A
31276H
2N2221
31272E
2n2222 itt
2N2222A itt
itt 2n2222
BSY86
BSY85
BSY83
itt 2N2222A
2N2219 transistor
BSY84
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2n2222 itt
Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
Text: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51
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VCBOUPtOl20V.
750mA.
800mW
BSY51
BSY54
BSY55
BSY56
BSY87
BSY88
BSY90
2n2222 itt
2N708
2n2388
P348A
BSY87
14093
2n930 price
bsy90
34313D ITT
2N1711
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2N2222A itt
Abstract: itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild 2N2369A 2N914
Text: Fairchild Semiconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C
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BSX20
35250H
BSX26
35251F
2N914
35252D
2N2369
35253B
2N2369A
35254X
2N2222A itt
itt 2N2222A
2n2222 itt
BFR37
BSX20 2n2222a
ITT 2N2219
BSY87
2n2222a fairchild
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2N2222A plastic package
Abstract: TPQ2907A transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904
Text: QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most
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14-pin
TPQ2222A
TPQ3904
TPQ2907A
TPQ3906
TPQ6502
2N2222
2N2907
2N2907A
2N3904
2N2222A plastic package
transistor 2n2222A plastic package
NPN transistor 2n2222A plastic package
2n2222a plastic
tpq3904
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2n2222 itt
Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
Text: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C
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BSX20
35250H
BSX26
35251F
2N914
35252D
2N2369
35253B
2N2369A
35254X
2n2222 itt
BSY86
ME6002
ME6102
BFY72
MA8003
fairchild semiconductors
2n2222 micro electronics
ME8003
BFY50
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Untitled
Abstract: No abstract text available
Text: L _ . . ^ AL L E GR O M I C R O S Y S T E M S INC ^3 D • D50L»33fl Q D O S b b ^ b ■ ALGR r-^ i" oj PROCESS DCA Process DCA NPN Small-Signal Transistor Process DCA is a double-diffused NPN silicon epi
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15hing
2N2222A
05G433Ã
D003b7G
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: mi it ti mi S E M E 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE F0R HIGH RELIABILITY APPLICATIONS m e c h a n ic a l d a t a Dimensions " inches FEATURES • SILICON PLANAR EPITAXIAL NPN
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2N2222ACSM
2N2222A
150mA
ai33ia?
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2N2222ACSM4
Abstract: No abstract text available
Text: mi SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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2N2222ACSM4
2N2222A
100MHz
150mA
150mA
2N2222ACSM4
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