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    2KX8 SRAM Search Results

    2KX8 SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    HM1-6516B/B Rochester Electronics LLC HM1-6516 - Standard SRAM, 2KX8, 200ns, CMOS Visit Rochester Electronics LLC Buy
    MC2716M/BJA Rochester Electronics LLC 2716M - 2Kx8 EPROM - Dual marked (7802201JA) Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy

    2KX8 SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi 1024k*8 SRAM

    Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
    Text: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8


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    PDF HN58X2464I 64kbit 400kHz HN58X2432I 32kbit HN58X2416I 16kbit HN58X2408I Hitachi 1024k*8 SRAM HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I

    sop28

    Abstract: STK22C48 STK22C48-NF25 STK22C48-NF45 tps 1806 239 SOIC
    Text: STK22C48 2Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Times The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


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    PDF STK22C48 STK22C48 ML0004 sop28 STK22C48-NF25 STK22C48-NF45 tps 1806 239 SOIC

    ML0004

    Abstract: SIMTEK STK22C48 sop28 SOP28 330 MIL STK22C48 STK22C48-NF25 STK22C48-NF45 Simtek obsolete part 32x512 STK22C48SF25
    Text: STK22C48 2Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Times The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


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    PDF STK22C48 STK22C48 ML0004 SIMTEK STK22C48 sop28 SOP28 330 MIL STK22C48-NF25 STK22C48-NF45 Simtek obsolete part 32x512 STK22C48SF25

    UM61

    Abstract: um6116 UM6116-2 umg1 umc um61 2kx8 EPROM 16KEPROM AFLC
    Text: 2Kx8 CMOS SRAM Features q q n Single i-5 volt power supply Acccss limes 90/120 ns max. Currcn : Standard version 0perating: Standby: m Pin compatible with Standard 16K EPROM/Mask R O M n UMG1 16-2/-3 ” UM6116-2L/-3L 1 0 0 mA (max.) 5 0 /JA ( m a x . )


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    PDF UM6116-2L/-3L 16-2LT/-3LT UM61 um6116 UM6116-2 umg1 umc um61 2kx8 EPROM 16KEPROM AFLC

    7142LA25L48B

    Abstract: 7164L20 4Kx8 sram ttl 5962-8861011UA 7206l20l 5962-8855206YA 5962-8855206 5962-8953604 54FCT244AT 5962-8855206XA
    Text: IDT Military Offerings FIFO Military Offerings Logic Military Offerings Multi-Port Military Offerings SRAM Military Offerings May 2005 FIFO Military Offerings FIFO Military Selector Guide by Part Number FIFO Military Selector Guide (by SMD Number) Obsolete Part List and Replacement Guide


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    PDF 72401L10DB 72401L15DB 72401L25DB 72401L35DB 72403L10DB 72403L35DB 7200L20TDB 7200L30TDB 7201LA20DB 7201LA30DB 7142LA25L48B 7164L20 4Kx8 sram ttl 5962-8861011UA 7206l20l 5962-8855206YA 5962-8855206 5962-8953604 54FCT244AT 5962-8855206XA

    48Z08

    Abstract: X20C16 "Direct Replacement" 48Z18 BQ4010 DS1225 STK10C48 STK10C68 STK11C48 STK11C68
    Text: The Simtek nvSRAM The nvSRAM is a fast access nonvolatile random access memory based on a memory cell that combines SRAM and EEPROM elements. Simtek’s innovation with this unique memory cell allows for the production of the fastest, most dense, most reliable and most versatile monolithic


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    PDF 55Plastic 300-mil 600-mil 350-mil 48Z08 X20C16 "Direct Replacement" 48Z18 BQ4010 DS1225 STK10C48 STK10C68 STK11C48 STK11C68

    P-Channel Depletion-Mode

    Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
    Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385


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    PDF 2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545

    IDT54FCT541ATDB

    Abstract: 5962-8861011UA 54FCT543DB 5962-8986301 54FCT162245TEB 54FCT543AT 54FCT541CTDB 5962-8860802 IDT54FCT162245ATEB 5962-8855201XA
    Text: FIFO MILITARY SELECTOR GUIDE As Of: November 1, 2001 FIFO Military Offerings Page FIFO Military Selector Guide by Part Number . 3-4 FIFO Military Selector Guide (by SMD Number) . 5 Obsolete Part List and Replacement Guide . 6-8


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    PDF 72401L10DB 72401L15DB 72401L25DB 72401L35DB 72403L10DB 72403L35DB 72404L15DB 72404L35DB 7200L20TDB 7200L30TDB IDT54FCT541ATDB 5962-8861011UA 54FCT543DB 5962-8986301 54FCT162245TEB 54FCT543AT 54FCT541CTDB 5962-8860802 IDT54FCT162245ATEB 5962-8855201XA

    Z80A

    Abstract: Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45 IDT7052 IDT7054
    Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CMOS technology, new SRAM architectures and


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    PDF AN-45 IDT7052 IDT7054 12-transistor IDT7052/IDTative Z80A Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45

    hm65161-2

    Abstract: 65161
    Text: IlM lI September 198Ç HM 65161 DATA SHEET 2kX8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME MILITARY: 90 ns max INDUSTRIAL : 80 ns (max) COMMERCIAL : 70 ns (max) LOW POWER CONSUMPTION ACTIVE : 240 mW (typ) STANDBY : 25 nW (typ) DATA RETENTION : 4 |iW (typ)


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    65162

    Abstract: transistor fn 1016
    Text: electronic June 1992 HM 65162 HI-REL DATA SHEET 2kX8 VERY LOW POWER CMOS SRAM FEATU R ES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE : 240 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 (iW (typ) . ASYNCHRONOUS


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    PDF fl45b 65162 transistor fn 1016

    6116 block diagram

    Abstract: No abstract text available
    Text: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C


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    PDF F12-H F0F11 6116 block diagram

    Untitled

    Abstract: No abstract text available
    Text: HOLTEK HT6116-70 CMOS 2Kx8-Bit SRAM Features • • • • • • • • • Single 5V power supply Low power consum ption - O perating: 400mW Typ. - Standby: 5|iW (Typ.) 70ns (M ax.) high speed access tim e Power down by pin C S T T L com patible in terface levels


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    PDF 400mW HT6116-70 24-pin 16384-bit HT6116-70

    Untitled

    Abstract: No abstract text available
    Text: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8


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    PDF M2716 M2764A TS27C64A M27128A M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024

    Untitled

    Abstract: No abstract text available
    Text: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02


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    PDF WS128K32-25XMRH 128Kx32 1x106 1x1014crrv2 128Kx32; WS128K32-25XMRH 128K32 128KX32

    HT6116 -7LL

    Abstract: HTG116-70 HT6116 HT6116-70
    Text: H T 6 1 1 6 -7 0 H O L T E K 2 5 S ' 3 > ' ^ > c : 5P \ 2 K - 8 B it S R A M Features Power dawn by pin CS TTL compatible Interface ievels Pin compatible wlth standard 2Kx8 bits of EPROM/MASK ROM Three’State output pins _ • Single 5V power supply * Low standby and operating power


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    PDF HT6116-70 16384-bit 500mV HT6116 -7LL HTG116-70 HT6116 HT6116-70

    es 3880 fm

    Abstract: BBS 8500 manufacturer code rohm AS7C34096 AS7C4096 t9140
    Text: H ig h P e rf o rm a n ce AS7C 4096 A S7 C 34 09 6 5 1 2Kx8 CMOS SRAM A 5 l 2 K x 8 CMOS SRAM Preliminary information Features • Organization: 524,288 w ords x 8 bits • High speed - 1 2 /1 5 /2 0 /2 5 ns address access time - 6 / 7 / 8 / 9 ns output enable access time


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    PDF 512Kx8 AS7C4096 AS7C34096 36-pin T00344cl es 3880 fm BBS 8500 manufacturer code rohm AS7C34096 t9140

    T6116

    Abstract: HT6116-7LL
    Text: HOLTEK n r ^ HT6116-7LL CMOS 2Kx8-Bit SRAM Features • • • • • • • • • S ingle 5V pow er supply Low pow er consum ption - O peratin g : 180m W Typ. - S tandby: 5|iW (Typ.) 70ns (M ax.) h ig h speed access tim e P ow er dow n by p in CS M em ory ex p an sio n by p in OE


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    PDF HT6116-7LL 24-pin T6116-7LL 384-bit HT6116-7LL T6116

    C8450

    Abstract: 952100201 100203
    Text: T em ic see S em ico n d u cto rs SCC Reference List ESA/SCC Specifications SCC Number Features TEMIC Fart Number Package S C C 930I01501 85 ns 50 u A 2K x8 SR A M H M C -6 5 1 6 2 E S C C 930Ì01502 85 ns 5 0 p A 2Kx8 SR A M H M 4 -6 5 Í6 2 E LCC32 S C C 930101503


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    PDF 930I01501 SCC9301015 LCC32 65262E 4--65262EB LCC44 C8450 952100201 100203

    Untitled

    Abstract: No abstract text available
    Text: T T M/HITE /M IC R O E L E C T R O N IC S WS128K32-XXX 128Kx32 SRAM MODULE O rganized as 128Kx32; U ser C o n fig u ra b le as 2 56K x16 or 5 1 2Kx8 FEATURES C o m m e rcia l, In d u s tria l and M ilita r y T e m p e ra tu re R anges 5 V o lt P o w e r S u p ply


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    PDF WS128K32-XXX 128Kx32 128Kx32; 09HXX 10HXX 10HXX 128KX

    Untitled

    Abstract: No abstract text available
    Text: 77 WS128K32-25G2SMX M/HITE /MICROELECTRONICS 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A c c ess T im e of 25ns O rg an ize d as 12 8 K x3 2 ; U se r C o n fig u ra b le as 2 5 6 K x 1 6 or ■ 5 1 2Kx8 R a d ia tio n T o le ra n t • T o t a l Dose H ard ness th ro u g h 1 x1 0 6 rad S i02


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    PDF WS128K32-25G2SMX 128Kx32 14crrv2 128KX32

    1202z

    Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
    Text: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883


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    PDF 5962-3829409MXA 5962-3829409MYC 5962-3829409MZA 5962-3829411MXA 5962-382941IMYC 2-3H29411MZA 5962-3829413MX 5962-3829413MYC 5962-3829413MZA 5962-3829415MYC 1202z MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3

    nv SRAM cross reference

    Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
    Text: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written


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    PDF DS1258AB-XXX DS1258Y-XXX DS1220AB-XXX 1220AB-XXX-IND DS1220AD-XXX DS1220AD-XXX-IND DS1225AB-XXX DS1225AD-XXX 1225AD-XXX-IND nv SRAM cross reference Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM

    MB98A91132-20

    Abstract: No abstract text available
    Text: Memory Cards 5 • Memory Cards (68-Pin, Two-Piece Connector Type) Vcc=+5V±5%,TA=0 °C to +55 °C Organization (W x b) Type Access Time max. (ns) Part Number Common Memory Cycle Time min. (ns) Attribute Memory Power Consumption max. (mW) Operating Standby Motte


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    PDF 68-Pin, MB98A90611-20 MB98A90612-20 MB98A90613-20 MB98A90711-20 MB98A90712-20 MB98A90713-20 MB98A90831-20 MB98A90832-20 MB98A90633-20 MB98A91132-20