Hitachi 1024k*8 SRAM
Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
Text: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8
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HN58X2464I
64kbit
400kHz
HN58X2432I
32kbit
HN58X2416I
16kbit
HN58X2408I
Hitachi 1024k*8 SRAM
HB28B128C8C
HB28B512C8C
CSP72
NVM1GBYTE
CSP-72
512kx8 sram dip
HN58X2402SI
HN58X2404SI
HN58X2408I
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sop28
Abstract: STK22C48 STK22C48-NF25 STK22C48-NF45 tps 1806 239 SOIC
Text: STK22C48 2Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Times The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance
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STK22C48
STK22C48
ML0004
sop28
STK22C48-NF25
STK22C48-NF45
tps 1806
239 SOIC
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ML0004
Abstract: SIMTEK STK22C48 sop28 SOP28 330 MIL STK22C48 STK22C48-NF25 STK22C48-NF45 Simtek obsolete part 32x512 STK22C48SF25
Text: STK22C48 2Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Times The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance
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STK22C48
STK22C48
ML0004
SIMTEK STK22C48
sop28
SOP28 330 MIL
STK22C48-NF25
STK22C48-NF45
Simtek obsolete part
32x512
STK22C48SF25
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UM61
Abstract: um6116 UM6116-2 umg1 umc um61 2kx8 EPROM 16KEPROM AFLC
Text: 2Kx8 CMOS SRAM Features q q n Single i-5 volt power supply Acccss limes 90/120 ns max. Currcn : Standard version 0perating: Standby: m Pin compatible with Standard 16K EPROM/Mask R O M n UMG1 16-2/-3 ” UM6116-2L/-3L 1 0 0 mA (max.) 5 0 /JA ( m a x . )
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UM6116-2L/-3L
16-2LT/-3LT
UM61
um6116
UM6116-2
umg1
umc um61
2kx8 EPROM
16KEPROM
AFLC
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7142LA25L48B
Abstract: 7164L20 4Kx8 sram ttl 5962-8861011UA 7206l20l 5962-8855206YA 5962-8855206 5962-8953604 54FCT244AT 5962-8855206XA
Text: IDT Military Offerings FIFO Military Offerings Logic Military Offerings Multi-Port Military Offerings SRAM Military Offerings May 2005 FIFO Military Offerings FIFO Military Selector Guide by Part Number FIFO Military Selector Guide (by SMD Number) Obsolete Part List and Replacement Guide
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72401L10DB
72401L15DB
72401L25DB
72401L35DB
72403L10DB
72403L35DB
7200L20TDB
7200L30TDB
7201LA20DB
7201LA30DB
7142LA25L48B
7164L20
4Kx8 sram ttl
5962-8861011UA
7206l20l
5962-8855206YA
5962-8855206
5962-8953604
54FCT244AT
5962-8855206XA
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48Z08
Abstract: X20C16 "Direct Replacement" 48Z18 BQ4010 DS1225 STK10C48 STK10C68 STK11C48 STK11C68
Text: The Simtek nvSRAM The nvSRAM is a fast access nonvolatile random access memory based on a memory cell that combines SRAM and EEPROM elements. Simtek’s innovation with this unique memory cell allows for the production of the fastest, most dense, most reliable and most versatile monolithic
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55Plastic
300-mil
600-mil
350-mil
48Z08
X20C16
"Direct Replacement"
48Z18
BQ4010
DS1225
STK10C48
STK10C68
STK11C48
STK11C68
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P-Channel Depletion-Mode
Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385
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2N5547JANTX
2N5547JANTXV
2N4856JAN
2N6660JANTX
2N4856JANTX
2N6660JANTXV
2N4856JANTXV
2N6661JAN
2N4857JAN
2N6661JANTX
P-Channel Depletion-Mode
MD80C31
JANTX2N4858
5962-9089101MEA
SI9110AK
JANTX2N6661
4Kx8 sram ttl
MGM TRANSFORMER
JANTX2N5114
janTXV2N5545
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IDT54FCT541ATDB
Abstract: 5962-8861011UA 54FCT543DB 5962-8986301 54FCT162245TEB 54FCT543AT 54FCT541CTDB 5962-8860802 IDT54FCT162245ATEB 5962-8855201XA
Text: FIFO MILITARY SELECTOR GUIDE As Of: November 1, 2001 FIFO Military Offerings Page FIFO Military Selector Guide by Part Number . 3-4 FIFO Military Selector Guide (by SMD Number) . 5 Obsolete Part List and Replacement Guide . 6-8
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72401L10DB
72401L15DB
72401L25DB
72401L35DB
72403L10DB
72403L35DB
72404L15DB
72404L35DB
7200L20TDB
7200L30TDB
IDT54FCT541ATDB
5962-8861011UA
54FCT543DB
5962-8986301
54FCT162245TEB
54FCT543AT
54FCT541CTDB
5962-8860802
IDT54FCT162245ATEB
5962-8855201XA
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Z80A
Abstract: Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45 IDT7052 IDT7054
Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CMOS technology, new SRAM architectures and
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AN-45
IDT7052
IDT7054
12-transistor
IDT7052/IDTative
Z80A
Z80A CPU
z80a-cpu
4Kx8 Dual-Port Static RAM
sense amplifier bitline memory device
datasheet and application 7217
IDT7027
AN-45
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hm65161-2
Abstract: 65161
Text: IlM lI September 198Ç HM 65161 DATA SHEET 2kX8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME MILITARY: 90 ns max INDUSTRIAL : 80 ns (max) COMMERCIAL : 70 ns (max) LOW POWER CONSUMPTION ACTIVE : 240 mW (typ) STANDBY : 25 nW (typ) DATA RETENTION : 4 |iW (typ)
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65162
Abstract: transistor fn 1016
Text: electronic June 1992 HM 65162 HI-REL DATA SHEET 2kX8 VERY LOW POWER CMOS SRAM FEATU R ES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE : 240 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 (iW (typ) . ASYNCHRONOUS
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fl45b
65162
transistor fn 1016
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6116 block diagram
Abstract: No abstract text available
Text: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C
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F12-H
F0F11
6116 block diagram
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Untitled
Abstract: No abstract text available
Text: HOLTEK HT6116-70 CMOS 2Kx8-Bit SRAM Features • • • • • • • • • Single 5V power supply Low power consum ption - O perating: 400mW Typ. - Standby: 5|iW (Typ.) 70ns (M ax.) high speed access tim e Power down by pin C S T T L com patible in terface levels
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400mW
HT6116-70
24-pin
16384-bit
HT6116-70
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Untitled
Abstract: No abstract text available
Text: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8
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M2716
M2764A
TS27C64A
M27128A
M27C256B
M27512
M27C512
M27C1000
M27C1001
M27C1024
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Untitled
Abstract: No abstract text available
Text: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02
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WS128K32-25XMRH
128Kx32
1x106
1x1014crrv2
128Kx32;
WS128K32-25XMRH
128K32
128KX32
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HT6116 -7LL
Abstract: HTG116-70 HT6116 HT6116-70
Text: H T 6 1 1 6 -7 0 H O L T E K 2 5 S ' 3 > ' ^ > c : 5P \ 2 K - 8 B it S R A M Features Power dawn by pin CS TTL compatible Interface ievels Pin compatible wlth standard 2Kx8 bits of EPROM/MASK ROM Three’State output pins _ • Single 5V power supply * Low standby and operating power
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HT6116-70
16384-bit
500mV
HT6116 -7LL
HTG116-70
HT6116
HT6116-70
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es 3880 fm
Abstract: BBS 8500 manufacturer code rohm AS7C34096 AS7C4096 t9140
Text: H ig h P e rf o rm a n ce AS7C 4096 A S7 C 34 09 6 5 1 2Kx8 CMOS SRAM A 5 l 2 K x 8 CMOS SRAM Preliminary information Features • Organization: 524,288 w ords x 8 bits • High speed - 1 2 /1 5 /2 0 /2 5 ns address access time - 6 / 7 / 8 / 9 ns output enable access time
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512Kx8
AS7C4096
AS7C34096
36-pin
T00344cl
es 3880 fm
BBS 8500
manufacturer code rohm
AS7C34096
t9140
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T6116
Abstract: HT6116-7LL
Text: HOLTEK n r ^ HT6116-7LL CMOS 2Kx8-Bit SRAM Features • • • • • • • • • S ingle 5V pow er supply Low pow er consum ption - O peratin g : 180m W Typ. - S tandby: 5|iW (Typ.) 70ns (M ax.) h ig h speed access tim e P ow er dow n by p in CS M em ory ex p an sio n by p in OE
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HT6116-7LL
24-pin
T6116-7LL
384-bit
HT6116-7LL
T6116
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C8450
Abstract: 952100201 100203
Text: T em ic see S em ico n d u cto rs SCC Reference List ESA/SCC Specifications SCC Number Features TEMIC Fart Number Package S C C 930I01501 85 ns 50 u A 2K x8 SR A M H M C -6 5 1 6 2 E S C C 930Ì01502 85 ns 5 0 p A 2Kx8 SR A M H M 4 -6 5 Í6 2 E LCC32 S C C 930101503
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930I01501
SCC9301015
LCC32
65262E
4--65262EB
LCC44
C8450
952100201
100203
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Untitled
Abstract: No abstract text available
Text: T T M/HITE /M IC R O E L E C T R O N IC S WS128K32-XXX 128Kx32 SRAM MODULE O rganized as 128Kx32; U ser C o n fig u ra b le as 2 56K x16 or 5 1 2Kx8 FEATURES C o m m e rcia l, In d u s tria l and M ilita r y T e m p e ra tu re R anges 5 V o lt P o w e r S u p ply
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WS128K32-XXX
128Kx32
128Kx32;
09HXX
10HXX
10HXX
128KX
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Untitled
Abstract: No abstract text available
Text: 77 WS128K32-25G2SMX M/HITE /MICROELECTRONICS 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A c c ess T im e of 25ns O rg an ize d as 12 8 K x3 2 ; U se r C o n fig u ra b le as 2 5 6 K x 1 6 or ■ 5 1 2Kx8 R a d ia tio n T o le ra n t • T o t a l Dose H ard ness th ro u g h 1 x1 0 6 rad S i02
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WS128K32-25G2SMX
128Kx32
14crrv2
128KX32
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1202z
Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
Text: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883
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5962-3829409MXA
5962-3829409MYC
5962-3829409MZA
5962-3829411MXA
5962-382941IMYC
2-3H29411MZA
5962-3829413MX
5962-3829413MYC
5962-3829413MZA
5962-3829415MYC
1202z
MR80C31
J65608
8kx8 sram
LCC48
128KX8 SRAM
5962-8506401MQA
C965608
5962-89X
MR-80C3
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nv SRAM cross reference
Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
Text: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written
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DS1258AB-XXX
DS1258Y-XXX
DS1220AB-XXX
1220AB-XXX-IND
DS1220AD-XXX
DS1220AD-XXX-IND
DS1225AB-XXX
DS1225AD-XXX
1225AD-XXX-IND
nv SRAM cross reference
Dallas 1225 AB
M48Z128-XXXPM1
ds1265 32pin
2kx8 sram cross reference
bq4010ym
DSI230Y-XXX
S1258
dallas ds1213c
2M x 16 SRAM
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MB98A91132-20
Abstract: No abstract text available
Text: Memory Cards 5 • Memory Cards (68-Pin, Two-Piece Connector Type) Vcc=+5V±5%,TA=0 °C to +55 °C Organization (W x b) Type Access Time max. (ns) Part Number Common Memory Cycle Time min. (ns) Attribute Memory Power Consumption max. (mW) Operating Standby Motte
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68-Pin,
MB98A90611-20
MB98A90612-20
MB98A90613-20
MB98A90711-20
MB98A90712-20
MB98A90713-20
MB98A90831-20
MB98A90832-20
MB98A90633-20
MB98A91132-20
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