GR281
Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.
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GR281
GR281
2000/95/EC
2716 eprom
4016 RAM
2716 eprom datasheet
memory 2716
eprom 2716
pd446
static ram 4802
2716 2k eprom retention
memory ram 6116
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2K600
Abstract: EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4 ic at89c51 20 pin at89c2051 ic ECLP07 ATMEL PRODUCT GUIDE 20 pin plcc ic base E2PROM pin configuration of ic AT89c51 C51 Family
Text: Atmel Product Guide AVR Enhanced RISC Microcontroller Part Number AT90S1300 AT90S2312 AT90S8414 Memory Size 1K x 8 2K x 8 8K x 8 Description AVR Microcontroller with 1K bytes Flash and 128-bytes EEPROM AVR Microcontroller with 2K bytes Flash and 128-bytes EEPROM
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AT90S1300
AT90S2312
AT90S8414
128-bytes
256-bytes
AT89C51
AT89LV51
AT89C52
AT89LV52
2K600
EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4
ic at89c51
20 pin at89c2051 ic
ECLP07
ATMEL PRODUCT GUIDE
20 pin plcc ic base
E2PROM
pin configuration of ic AT89c51
C51 Family
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STK25C48
Abstract: No abstract text available
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ML0005
Sn/15
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Untitled
Abstract: No abstract text available
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ML0005
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STK25C48
Abstract: No abstract text available
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ML0005
Sn/15
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ttl SUBSTITUTION DATA BOOK
Abstract: STK25C48
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROM • 20ns, 25ns, 35ns and 45ns Access Times
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ttl SUBSTITUTION DATA BOOK
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cy7c245a-35dmb
Abstract: 7C245A CERAMIC LEADLESS CHIP CARRIER CY7C245A CY7C245A35DMB CY7C245A-35PC C245A-1 CY7C245A-25DMB
Text: 1CY 7C24 5A CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power The CY7C245A is a high-performance, 2K x 8, electrically programmable, read only memory packaged in a slim 300-mil
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CY7C245A
CY7C245A
300-mil
15-ns
10-ns
cy7c245a-35dmb
7C245A
CERAMIC LEADLESS CHIP CARRIER
CY7C245A35DMB
CY7C245A-35PC
C245A-1
CY7C245A-25DMB
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CY7C245A-25DMB
Abstract: 7C245A CY7C245A CY7C245A-25LMB SMD diode TSA 7C245A-15 A3 smd diode spec
Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light
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CY7C245A
CY7C245A
300-mil
15-ns
10-ns
CY7C245A-15JI
CY7C245A-25DMB
7C245A
CY7C245A-25LMB
SMD diode TSA
7C245A-15
A3 smd diode spec
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PLD28
Abstract: 22V10-Macrocell 5962-86705 5962-89598 cy7c291 PLDC20G10 CY6116A CY7C128A CY7C168A CY7C185A
Text: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) Availability 16K 2K x 8—CS Power-Down 24S CY7C128A 5962-89690 tAA = 20, 25 125 @ 20 Now 16K 2K x 8—CS Power-Down 24S CY7C128A
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CY7C128A
CY6116A
CY7C168A
CY7C185A
MIL-PRF-38535.
MIL-STD-883D
22-pin
300-mil
PLD28
22V10-Macrocell
5962-86705
5962-89598
cy7c291
PLDC20G10
CY6116A
CY7C128A
CY7C168A
CY7C185A
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SMD diode TSA
Abstract: 7c245a
Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light
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CY7C245A
15-ns
10-ns
300-mil,
24-pin
CY7C245A
CY7C245A-15JI
SMD diode TSA
7c245a
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518-0102
Abstract: 7C245A CY7C245A CY7C245A-25DMB CY7C245A-25LMB 7C245A-18 7C245A-35 A10A4 7c245 7C245A-15
Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light
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CY7C245A
CY7C245A
300-mil
15-ns
10-ns
CY7C245A-15JI
518-0102
7C245A
CY7C245A-25DMB
CY7C245A-25LMB
7C245A-18
7C245A-35
A10A4
7c245
7C245A-15
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CY6116A
Abstract: CY7C128A CY7C168A CY7C185A CY7C198 CY7C199 CY37128 5962-85525 84036 Product Selector Guide
Text: Military Product Selector Guide Static RAMs Size Organization Pins DIP Part Number SMD Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) Availability 16K 2K x 8—CS Power-Down 24S CY7C128A 5962-89690 tAA = 20, 25 125 @ 20 Now 16K 2K x 8—CS Power-Down 24S CY7C128A
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CY7C128A
CY6116A
CY7C168A
CY7C185A
MIL-PRF-38535.
MIL-STD-883D
22-pin
300-mil
CY6116A
CY7C128A
CY7C168A
CY7C185A
CY7C198
CY7C199
CY37128
5962-85525
84036
Product Selector Guide
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7C245A
Abstract: CY7C245A CY7C245A-25DMB CY7C245A-25LMB CY7C245A-15JI
Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light
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CY7C245A
CY7C245A
300-mil
15-ns
10-ns
aY7C245A
CY7C245A-15JI
7C245A
CY7C245A-25DMB
CY7C245A-25LMB
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C245A-7
Abstract: 7C245A CY7C245A CY7C245A-15JC
Text: 1CY7C245A CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15-ns address set-up The CY7C245A is a high-performance, 2K x 8, electrically programmable, read only memory packaged in a slim 300-mil
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1CY7C245A
CY7C245A
15-ns
CY7C245A
300-mil
10-ns
C245A-7
7C245A
CY7C245A-15JC
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7C245A-35
Abstract: CY7C245A-25WMB CY7C245A-25QMB LM340-XX CY7C245A
Text: 45A CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15-ns address set-up The CY7C245A is a high-performance, 2K x 8, electrically programmable, read only memory packaged in a slim 300-mil
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CY7C245A
15-ns
CY7C245A
300-mil
10-ns
7C245A-35
CY7C245A-25WMB
CY7C245A-25QMB
LM340-XX
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CY7C291AL-35PC
Abstract: cy7c291 CY7C291A R1250
Text: CY7C291A 2K x 8 Reprogrammable PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power • High speed The CY7C291A is a high-performance 2K-word by 8-bit CMOS PROM. It is packaged in a 300-mil ceramic package
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CY7C291A
CY7C291A
300-mil
CY7C291AL-35PC
cy7c291
R1250
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CY7C291-35WMB
Abstract: A10-A0 CY7C291-50WMB cy7c291 CY7C291A R1250 7c291a50 CY7C291A-35WC 7C291AL-35 MO-119
Text: CY7C291A 2K x 8 Reprogrammable PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power • High speed The CY7C291A is a high-performance 2K-word by 8-bit CMOS PROM. It is packaged in a 300-mil ceramic package
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CY7C291A
CY7C291A
300-mil
CY7C291-35WMB
A10-A0
CY7C291-50WMB
cy7c291
R1250
7c291a50
CY7C291A-35WC
7C291AL-35
MO-119
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AN56
Abstract: X20C04 X20C16 RAS 0510
Text: APPLICATION NOTE A V A I L A B L E X20C16 AN56 X20C16 16K 2K x 8 Bit High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C16 is a 2K x 8 NOVRAM featuring a highspeed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E 2 PROM and the
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X20C16
X20C16
AN56
X20C04
RAS 0510
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AN56
Abstract: X20C04 X20C16 T-031 NOVRAM 2k x 8
Text: APPLICATION NOTE A V A I L A B L E X20C16 AN56 X20C16 16K 2K x 8 Bit High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • The Xicor X20C16 is a 2K x 8 NOVRAM featuring a highspeed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E 2 PROM and the
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X20C16
X20C16
9-A-0033
AN56
X20C04
T-031
NOVRAM 2k x 8
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S87C751-1A28
Abstract: 83C751-87C751 s87c751 8XC751 1N24 5n24 S87C751-1N24
Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION 83C751/87C751 • 2k x 8 ROM 83C751 2k x 8 EPROM (87C751) The Philips 83C751/87C751 offers the advantages of the 80C51 architecture in a small package and at low cost.
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83C751/87C751
83C751/87C751
80C51
8XC751
83C751)
87C751)
16-bit
S87C751-1A28
83C751-87C751
s87c751
1N24
5n24
S87C751-1N24
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2N24
Abstract: No abstract text available
Text: Product specification Philips Semiconductors CMOS single-chip 8-bit microcontrollers DESCRIPTION 83C751/87C751 • 2k x 8 ROM 83C751 2k x 8 EPROM (87C751) The Philips 83C751/87C751 offers the advantages of the 80C51 architecture in a small package and at low cost.
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83C751/87C751
83C751)
87C751)
83C751/87C751
80C51
8XC751
16-bit
2N24
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EPROM
Abstract: M87C512 m27c256 UV EPROM ET2716
Text: GENERAL INDEX EPROM DEVICES NMOSEPROM M/ET2716 2K x 8 M2732A (4K x 8) M2764A (8K x 8) M27128A (16K x 8) M27256 (32K x 8) M27512 (64K x 8) UV EPROM . UV EPROM .
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M/ET2716
M2732A
M2764A
M27128A
M27256
M27512
TS27C64A
M27HC641
M27C256B
M87C257
EPROM
M87C512
m27c256
UV EPROM
ET2716
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A1051
Abstract: No abstract text available
Text: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs
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TMS27C291,
TMS27C292
384-BIT
TMS27PC291
27C/PC291-3
27C/PC291
27C/PC291-5
27C/PC291-35
27C/PC291-45
A1051
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aS3131
Abstract: u2331
Text: CY7C245A P YP: V « *1 i. X - 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power The CY7C245A is a high-performance, 2K x 8, electrically pro grammable, read only memory packaged in a slim 300-mil
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PDF
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15-ns
300-mil,
24-pin
CY7C245A
CY7C245A
aS3131
u2331
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