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    2A 500V MOSFET Search Results

    2A 500V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N5006LSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3.5A 3000Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    H5N5001FM-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 5A 1.5Mohm To-220Fm Visit Renesas Electronics Corporation
    H5N5006DL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3A 3000Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK1832-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 10A 900Mohm To-3Pfm Visit Renesas Electronics Corporation
    2SK2408-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 7A 900Mohm To-220Ab Visit Renesas Electronics Corporation

    2A 500V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7398 FSL430R4

    2E12

    Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSL430D, FSL430R 2E12 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3

    Untitled

    Abstract: No abstract text available
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSL430D, FSL430R

    2E12

    Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSL430D, FSL430R 2E12 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3

    Untitled

    Abstract: No abstract text available
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    2E12

    Abstract: 3E12 FRL430D FRL430H FRL430R
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRL430D FRL430H FRL430R

    2E12

    Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high


    Original     		PDF IRSM836-025MA IRSM836-025MA 12x12mm

    Untitled

    Abstract: No abstract text available
    Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high


    Original     		PDF IRSM836-025MA IRSM836-025MA 12x12mm

    IRMCK171

    Abstract: IRMCS1171
    Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high


    Original     		PDF IRSM836-025MA IRSM836-025MA 12x12mm IRMCK171 IRMCS1171

    DIODE JS

    Abstract: No abstract text available
    Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high


    Original     		PDF IRSM836-025MA IRSM836-025MA 12x12mm DIODE JS

    international rectifier HVIC

    Abstract: No abstract text available
    Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high


    Original     		PDF IRSM836-025MA IRSM836-025MA 12x12mm protec12 international rectifier HVIC

    Untitled

    Abstract: No abstract text available
    Text: RDD022N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF RDD022N50 SC-63) OT-428) 022N50 R1102A

    Untitled

    Abstract: No abstract text available
    Text: RDD023N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF RDD023N50 SC-63) OT-428) 023N50 R1102A

    JANSR2N7398

    Abstract: 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N73 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7398 FSL430R4 JANSR2N7398 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET

    FDD5N50NZTM

    Abstract: FDD5N50NZ
    Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5Ω Features Description • RDS on = 1.38Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50NZ FDD5N50NZTM FDD5N50NZ

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 N-Channel Enhancement type OUTLINE DIMENSIONS F2E50VX2 Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2178 F2E50VX2)

    2SK2178

    Abstract: F2E50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2178 F2E50VX2) 2SK2178 F2E50VX2

    FDD5N50TM

    Abstract: FDD5N50 FDD5N50TF ULTRA FAST diode 400v 5a
    Text: UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD5N50 FDD5N50 FDD5N50TM FDD5N50TF ULTRA FAST diode 400v 5a

    43721

    Abstract: No abstract text available
    Text: JANSR2N7398 EB Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, ros O N = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL430R4 JANSR2N7398 MIL-STD-750, MIL-S-19500, 500ms; 43721

    Untitled

    Abstract: No abstract text available
    Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50S1 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSL430D, FSL430R 36MeV/mg/cm2 O-205AF 254mm)

    Untitled

    Abstract: No abstract text available
    Text: SS FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A ,500V,rDS ON = 2.50£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSL430D, FSL430R MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: H a r r is I J U S E M I C O N D U C T O R FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 2A, 500V, RDS on = 2.5012 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD FRU30UI5 FRL430PHDT0