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    2SD1747 Search Results

    2SD1747 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1747 Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD1747 Panasonic NPN Transistor Original PDF
    2SD1747 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1747 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1747 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1747 Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1747A Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD1747A Panasonic NPN Transistor Original PDF
    2SD1747A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1747A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1747A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1747A Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1747AP Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
    2SD1747AQ Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
    2SD1747P Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
    2SD1747Q Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF

    2SD1747 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1747

    Abstract: 2SD1747A ic shelf life
    Text: Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit: mm 2.5±0.2 1.0 1.1±0.1 Parameter Collector-base voltage (Emitter open) 2SD1747 0.75±0.1 0.4±0.1 1.0±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating


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    PDF 2SD1747, 2SD1747A 2SD1747 2SD1747 2SD1747A ic shelf life

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit: mm 2.5±0.2 (1.0) 1.1±0.1 Parameter Collector-base voltage (Emitter open) 2SD1747 0.75±0.1 0.4±0.1


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    PDF 2002/95/EC) 2SD1747, 2SD1747A 2SD1747 2SD1747A

    2SB1177

    Abstract: 2SD1747 2SD1747A DSA003794
    Text: Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1177 Unit: mm 7.0±0.3 ● +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE


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    PDF 2SD1747, 2SD1747A 2SB1177 300ms 2SD1747 2SB1177 2SD1747 2SD1747A DSA003794

    2SB1177

    Abstract: 2SD1747 2SD1747A
    Text: Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1177 Unit: mm 7.0±0.3 ● +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE


    Original
    PDF 2SD1747, 2SD1747A 2SB1177 2SB1177 2SD1747 2SD1747A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit: mm 2.5±0.2 (1.0) 1.1±0.1 Parameter Collector-base voltage (Emitter open) 2SD1747 0.75±0.1 0.4±0.1


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    PDF 2002/95/EC) 2SD1747, 2SD1747A 2SD1747 2SD1747A

    2SD1747

    Abstract: 2SD1747A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit: mm M Di ain sc te on na tin nc ue e/ d 3.5±0.2 (1.0) 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 1.1±0.1


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    PDF 2002/95/EC) 2SD1747, 2SD1747A 2SD1747 2SD1747 2SD1747A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2SD1761

    Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
    Text: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)


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    PDF 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A 2SD1749 2SD1749A 2SB1183 SC-63 2SD1759F5 2SD1761 2S01761 2sd1764 2sb117 2SD1760F5 2SD1747

    2SB1177

    Abstract: 2SD1747
    Text: Power Transistors 2SB1177 2SB1177 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1747 Unit i mm • Features • Low c o lle c tc r-e im itte r s a tu ra tio n v o ltag e • G ood lin earity o f D C c u r re n t gain


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    PDF 2SB1177 2SD1747 2SB1180/A) 2SB1177 2SD1747

    2SB1177

    Abstract: 2SD1747 2SD1747A
    Text: 2SD1747, 2SD1747A Power Transistors 2SD1747, 2SD 1747A Silicon NPN Epitaxial Planar Type M Package Dimensions Power Switching Complementary Pair with 2SB1177 U n it' ! mm • Features 3.7m ax • Low collector-em itter saturation voltage VcEisao . 0 .9 ± 0 .1


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    PDF 2SD1747, 2SD1747A 2SB1177 2SD1747 bT32652 2SB1177 2SD1747A

    2SB1177

    Abstract: 2SD1747 2SD1747A
    Text: Power T ransistors 2SD1747, 2SD1747A 2SD1747, 2SD1747A Silicon NPN Epitaxial Planar Type ft Package Dimensions Power Switching Complementary Pair with 2SB1177 •Features • • • • Unit ! mm 0.9 + 0.1- ■Absolute Maximum Ratings Tc=25°C Item Sym bol


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    PDF 2SD1747, 2SD1747A 2SB1177 2SD1747 2SD1747A f-10V 2SB1177

    2SB117

    Abstract: 2SB1177 2SD1747
    Text: 2SB117&#39; Power T ransistors 2SB1177 Silicon PNP Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SD1747 ■Features Unit ! mn • Low c o lle c to r-e im itte r sa tu ra tio n v o lta g e VcE<«t> • Good lin e a rity o f D C c u rr e n t gain


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    PDF 2SB117" 2SB1177 2SD1747 10MHz 2SB117 2SB1177 2SD1747

    2SC4542

    Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
    Text: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313


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    PDF 2SC3789 2SC2551 2SC3209 2SC1573A 2SC4106 2SC2553 2SC2518 2SC4107 2SC3626 2SC4423 2SC4542 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555

    2SD1755

    Abstract: No abstract text available
    Text: Power Transistors 2SD1755 2SD1755 Silicon NPN Epitaxial Planar Type High DC C urrent Gain Package D im ensions Pow er A m plifier Ii f e , Unit ! mn • Features • H ig h D C c u r r e n t g ain (Ii f e ) • G o o d lin e a r it y o f D C c u r r e n t g ain (h re )


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    PDF 2SD1755 2SD1747/A) 2SD1755

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    2SD1755

    Abstract: VUO60
    Text: Power Transistors 2SD1755 2S D 1755 Silicon NPN Epitaxial Planar Type Package D im ensions High DC C urrent Gain hFE , Pow er A m plifier U n i t ! mm • Features • High DC current gain 3.7 max 7 .3 ma x. (I i f e ) 3 .2 m a x. 0. 9 ± 0 . 1 0.5max. • Good linearity of DC current gain (htE)


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    PDF 2SD1755 2SD1747/A) 2SD1755 VUO60

    LT32B

    Abstract: 2SB1176 2SD1746
    Text: 2SD 17 4 6 Power Transistors 2SD1746 Silicon N P N Epitaxial Planar Type Package Dim ensions Power Switching C om plem entary Pair with 2 S B 1 1 7 6 Unit ! mm • Features • Low collector-em itter saturation voltage V ce<&jo • High DC current gain (hFE) and good linearity


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    PDF 2SD1746 10MHz T32B5E 2SD1747/A) lbfl40 LT32B 2SB1176 2SD1746

    2SC4714

    Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F


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    PDF O-126 D52SK, O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SA1817 2SD1539 2SA1605 2SC2258 2SC3063 2SC3942 2SC3945 2SC4717

    2SC5072

    Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
    Text: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679


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    PDF 2SC4181 2SD1823 2SD2351 2SC4443 2SC4176 2SD1977 2SC4700 2SC4523 2SD1412 2SD1747 2SC5072 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    B1548

    Abstract: 2SB1299A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


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    PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A