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    2SC5875 Search Results

    2SC5875 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5875 ROHM Power transistor (30V, 2A) Original PDF
    2SC5875TV2Q ROHM Power Transistor (30 V, 2 A) Original PDF
    2SC5875TV2R ROHM Power Transistor (30 V, 2 A) Original PDF

    2SC5875 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C5875

    Abstract: 2SA2087 2SC5875
    Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original
    PDF 2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA2087 2SC5875

    C5875

    Abstract: 2SA20 2SA2087 2SC5875
    Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original
    PDF 2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA20 2SA2087 2SC5875

    A2087

    Abstract: 2SA2087 2SC5875 Package A2087
    Text: 2SA2087 Transistors Power transistor −30V, −2A 2SA2087 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −100mA)


    Original
    PDF 2SA2087 65Max. -200mV -100mA) 2SC5875 A2087 A2087 2SA2087 2SC5875 Package A2087

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original
    PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    Package A2087

    Abstract: 2SA2087 2SC5875 A2087 2SA20
    Text: 2SA2087 Transistors Power transistor −30V, −2A 2SA2087 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −100mA)


    Original
    PDF 2SA2087 65Max. -200mV -100mA) 2SC5875 A2087 Package A2087 2SA2087 2SC5875 A2087 2SA20

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


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    PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    2SC5734K

    Abstract: 2sc5917 2SC5734 2SA2054
    Text: Excellence in Electronics 2005 Ver.1 T ransistor New Products Pari No. B V ceo lc Ip N PN M [A] [A] 2SA2048K 2SC5730K 30 1 2 2SA2054K 2SC5734K 90 0.5 1 Package SMT3 ^ Pc=0.2W " PNP Pari No. Package TSMT3 Pc=0.5W * W Package ATV P c=1W J L 'V BV ceo [V] hF:


    OCR Scan
    PDF 2SA2048K 2SA2054K 2SC5730K 2SC5734K 2SA2048 2SA2113 2SA2134 2SA2090 2SC5916 2SC5984* 2SC5734K 2sc5917 2SC5734 2SA2054