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    2N7002 Price and Stock

    Diodes Incorporated 2N7002KQ-7

    2N7002 FAMILY SOT23 T&R 3K
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    DigiKey 2N7002KQ-7 Reel 3,000 3,000
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    Avnet Silica 2N7002KQ-7 6,000 10 Weeks 3,000
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    Win Source Electronics 2N7002KQ-7 110,000
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    UMW 2N7002

    S0T-23 MOSFETS ROHS
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    DigiKey 2N7002 Digi-Reel 1,945 1
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    2N7002 Reel 3,000
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    Vishay Siliconix 2N7002E-T1-E3

    MOSFET N-CH 60V 240MA SOT23-3
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    DigiKey 2N7002E-T1-E3 Digi-Reel 1,847 1
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    2N7002E-T1-E3 Cut Tape 1,847 1
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    RS 2N7002E-T1-E3 Bulk 3,000
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    SLKOR 2N7002

    60V 115MA 7.5@10V,500MA 225MW N
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    DigiKey 2N7002 Digi-Reel 578 1
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    2N7002 Cut Tape 578 1
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    2N7002 Reel 3,000
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    Analog Power 2N7002

    MOSFET N-CH 60V 0.6A SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N7002 Reel 3,000
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    Find more 2N7002 price and stock on Findchips.com

    2N7002 Datasheets (360)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002 Calogic N-Channel Enhancement-Mode MOS Transistor Original PDF
    2N7002 Central Semiconductor N-CHANNEL ENHANCEMENT-MODE MOSFET Original PDF
    2N7002 Central Semiconductor MOSFET, Enhancement, N Channel, 60V, SOT-23, 3-Pin Original PDF
    2N7002 Central Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 115MA SOT-23 Original PDF
    2N7002 Comchip Technology N-channel transistor. Drain-sourse voltage 60 V. Original PDF
    2N7002 Diodes N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    2N7002 Diodes Short Form Selection Guide Original PDF
    2N7002 Diodes TRANS MOSFET N-CH 60V 0.115A 3SOT-23 Original PDF
    2N7002 Diodes N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    2N7002 Diodes TRANS/MOSFET/SMD/2N7002L/SOT23 Original PDF
    2N7002 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002 Fairchild Semiconductor TRANS MOSFET N-CH 60V 0.115A 3SOT-23 T/R Original PDF
    2N7002 Fairchild Semiconductor N-Channel Small Signal MOSFET Original PDF
    2N7002 Galaxy Semi-Conductor Holdings Small Signal MOSFET Transistor Original PDF
    2N7002 General Semiconductor MOSFET, Enhancement, N Channel, 60V, SOT-23, 3-Pin Original PDF
    2N7002 General Semiconductor DMOS Transistors (N-Channel) Original PDF
    2N7002 Infineon Technologies N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3,000.0 mOhm; RDS (on) (max) (@4.5V): 4,000.0 mOhm; RDS (on) (max) (@2.5V): -; Original PDF
    2N7002 Kexin N-Channel MOSFET Original PDF
    ...

    2N7002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING zg

    Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
    Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKV OT666 AEC-Q101 771-2N7002BKV115 2N7002BKV TRANSISTOR SMD MARKING zg transistor smd zG TRANSISTOR SMD MARKING CODE zg

    2N7002BKW

    Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF 2N7002BKW OT323 SC-70) AEC-Q101 771-2N7002BKW115 2N7002BKW 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA

    Untitled

    Abstract: No abstract text available
    Text: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002CK O-236AB) 2N7002CK 771-2N7002CK215

    2N7002K-7

    Abstract: 2N7002KQ-7 2N7002K1
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original     		PDF 2N7002K 380mA 310mA AEC-Q101 DS30896 621-2N7002K-7 2N7002K-7 2N7002K-7 2N7002KQ-7 2N7002K1

    2N7002A-7

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF 2N7002A 200mA AEC-Q101 DS31360 621-2N7002A-7 2N7002A-7 2N7002A-7

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original     		PDF 2N7002KA 2N7002KA

    2N7002F

    Abstract: 2N7002F_2
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002F mbb076 2N7002F 2N7002F_2

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002DW MIL-STD-883 JESD22-B102-D JESD22-A102-C 168hours MIL-STD-750D METHOD-1051 JESD22-A104-B 10min

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


    Original     		PDF 2N7002W OT-323 OT-323, MIL-STD-202, 500mA DS30099

    2N7002G-AE2-R

    Abstract: 2N7002
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to


    Original     		PDF 2N7002 2N7002 400mA QW-R206-037 2N7002G-AE2-R

    an3r

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during


    Original     		PDF 2N7002ZT 2N7002ZT 2N7002ZTL-AN3-R 2N7002ZTG-AN3-R OT-523 QW-R502-538 an3r

    SOT-363

    Abstract: 2N7002ZDWG-AL6-R marking 2A sot-363
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during


    Original     		PDF 2N7002ZDW 2N7002ZDW 2N7002ZDWL-AL6-R 2N7002ZDWG-AL6-R OT-363 QW-R502-540 SOT-363 marking 2A sot-363

    SOT-363 PWM

    Abstract: 2N7002Z
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in


    Original     		PDF 2N7002ZDW 300mA, 2N7002ZDW 2N7002ZDWL-AL6-R 2N7002ZDWG-AL6-R OT-363 QW-R502-540 SOT-363 PWM 2N7002Z

    2N7002K

    Abstract: RG33
    Text: 2N7002K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE * * Gate Pretection Diode SOURCE 2 Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,


    Original     		PDF 2N7002K 2N7002K OT-23 Pul00mA width300s, 270/W 21-Nov-06 RG33

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC DIP Type SMD Type Type Product specification 2N7002 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Voltage controlled small signal switch 0.4 3 High density cell design for low RDS ON 1 High saturation current capability


    Original     		PDF 2N7002 OT-23 500mA

    2N7002L

    Abstract: 2N7002LT3G 2N7002LT1G 2N7002LT3H
    Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • AEC Qualified • PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60


    Original     		PDF 2N7002L OT-23 2N7002L/D 2N7002L 2N7002LT3G 2N7002LT1G 2N7002LT3H

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) Top View S .056 (1.43) .052 (1.33) 3 1 2 0.037 (0.95) .007 (0.175) .005 (0.125) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) .037(0.95) .037(0.95)


    Original     		PDF 2N7002 OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 DMOS Transistors N-Channel TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 1 Pin Configuration 1. Gate 2. Source 3. Drain 0.037 (0.95) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125)


    Original     		PDF 2N7002 O-263AB OT-23) OT-23

    Marking Code S72

    Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)


    Original     		PDF 2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 500mA 200mA 200mA, Marking Code S72 s72 sot 23 s72 mosfet 2N7002 S72 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: WEITRON Small Signal MOSFET N-Channel 2N7002 3 DRAIN * “G” Lead Pb -Free Features: SOT-23 3 1 *Low On-Resistance : 3 Ω *Low Input Capacitance: 25PF *Low Out put Capacitance : 6PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 7.5ns GATE 1 2 2 SOURCE


    Original     		PDF 2N7002 OT-23 OT-23

    2N7002K

    Abstract: No abstract text available
    Text: 2N7002K N-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free 3 DRAIN 1 GATE * * Gate Pretection Diode Description: DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,


    Original     		PDF 2N7002K 2N7002K OT-23 21-Nov-06

    2N7002BKS

    Abstract: dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt
    Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKS OT363 SC-88) AEC-Q101 2N7002BKS dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


    OCR Scan     		PDF 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2

    702 transistor smd

    Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702
    Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. SYMBOL PARAMETER V ds drain-source voltage Id


    OCR Scan     		PDF 2N7002 702 transistor smd TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702