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    2N3824 Search Results

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    2N3824 Price and Stock

    Microchip Technology Inc 2N3824

    JFET
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    Microchip Technology Inc 2N3824 28 Weeks
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    Onlinecomponents.com 2N3824
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    VPT Components JANTX2N3824A-1

    - Bulk (Alt: JANTX2N3824A-1)
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    VPT Components JAN2N3824A-1

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    InterFET Corporation 2N3824

    JFET JFET N-Channel -50V Low Ciss
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    Texas Instruments 2N3824

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    Bristol Electronics 2N3824 6 1
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    Quest Components 2N3824 4
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    2N3824 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3824 Central Semiconductor N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR Original PDF
    2N3824 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N3824 Calogic N-Channel JFET Switch Scan PDF
    2N3824 Central Semiconductor FET, N Channel, ID 10 mA Scan PDF
    2N3824 Intersil Shortform Data Book 1983/4 Short Form PDF
    2N3824 Intersil Data Book 1981 Scan PDF
    2N3824 Micro Electronics N-Channel JFETs Scan PDF
    2N3824 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3824 Motorola The European Selection Data Book 1976 Scan PDF
    2N3824 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3824 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N3824 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3824 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3824 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N3824 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3824 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3824 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N3824 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3824 National Semiconductor Switches/Choppers Scan PDF
    2N3824 National Semiconductor N-Channel JFET Switch Scan PDF

    2N3824 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3824

    Abstract: No abstract text available
    Text: 2N3824 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3824 Availability Online Store


    Original
    PDF 2N3824 2N3824 STV3208 LM3909N

    2N3824

    Abstract: 2N6660Q 2N6660CSM4-JQR-B TO276AB 2N4393CSMJ
    Text: Search Results Part number search for devices beginning "2N3824" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N3824 N-Channel TO72 50V - 0.3W -


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    PDF 2N3824" 2N3824 2N3824LP 2N3824-TO46 2N3824-TO72 2N6660" 2N6660 2N6660CSM4 2N6660CSM4-JQR-B 2N6660-JQR-B 2N6660Q TO276AB 2N4393CSMJ

    2N3824

    Abstract: 2N3823 transistor 2N3824 2N3823 equivalent 2N3824 equivalent NJ32 4B401
    Text: Databook.fxp 1/13/99 2:09 PM Page B-4 B-4 01/99 2N3823, 2N3824 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    PDF 2N3823, 2N3824 2N3823 2N3824 2N3823 transistor 2N3824 2N3823 equivalent 2N3824 equivalent NJ32 4B401

    U1897E

    Abstract: U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130
    Text: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) Crss Max (pF) Vgs (off) Min (V) Vgs (off) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A


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    PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 U1897E U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130

    2n3824

    Abstract: 2N3821 2N3822
    Text: TELEPHONE: 973 379-2922 (•112) 227-9009 FAX (973) 3794990 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 2N3821 2N3822 2N3824 TO-72 1 D'»'n MAXIMUM RATINGS Symbol Value Unit vDS VDG VGS ID fo 50 Vdc 50 Vdc Junction Temperature Range Tj -75 Storage Temperature Rang*


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    PDF 2N3821 2N3822 2N3824 2N382I 2n3824 2N3821 2N3822

    2N3824

    Abstract: transistor 2N3824 2N3822 2n3821
    Text: Datasheet 2N3821 2N3822 2N3824 I H V IM fSem E iconductor c i l l i QCorp. 1 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-72 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF 2n3821 2n3822 2n3824 to-72 2N3821, 2N3822, 2N3824 200HA transistor 2N3824

    PN5432

    Abstract: U1898
    Text: A National Semiconductor NATL N-Channel JFETs C|» rds on (11) @ lD (P F)@ V d s Max (mA) Max (V) 2N3824 2N3966 2N3970 2N3971 2N3972 TO-72 TO-72 TO-18 TO-18 TO-18 SO 30 40 40 40 1 1 1 1 1 0.1 1 0.25* 0.25* 0.25* 30 20 20 20 20 0.1 0.1 0.25 0.25 0.25 15 10


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    PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 PN5432 U1898

    jfet selection guide

    Abstract: rcm 2020
    Text: 3> —3 H JFET Selection Guide _ N - C n a n n e l 2 2 Ul o JFETs CO o S W IT C H F S /n H O P P F R S , S tyle 2N3824 TO-72 50 2N3966 TO-72 30 1 2N3970• TO-18 40 1 2N3971 TO-18 40 1 0.25* 2N3972 TO-18 40 1 0,25* 2N4091 TO-18 40 1 0.2* 2N4092 TO-18 40 1


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: designed for B S ilic o n ix . Performance Curves NRL See Section 5 • High Speed Commutators ■ Choppers 2N3824 n-channel JFET BENEFITS • Low Insertion Loss rds on < 250 Ï2 • High Off-lsolation ■D(off) < 0 1 nA •ABSOLUTE M AXIMUM RATINGS (25°C)


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    PDF 250i2

    jfet selector guide

    Abstract: T0-220SM
    Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763


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    PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM

    2n3824

    Abstract: 2N3822 2N3824 equivalent 2N3822 MOTOROLA 2N3822 equivalent 2N4220 MOTOROLA 2n3821 2N3621
    Text: MOTOROLA SC XSTRS/R F 12E 0 | fa3fa7a5»4 0Dabbl3 fl | 2N3821, 2N3822 2N3824 CASE 20-03, STYLE 1 TO-72 TO-206AF M AXIM UM RATINGS Symbol Value Drain-Source Voltage VDS 50 Vdc Drain-Gate Voltage Vd g 50 Vdc Gate-Source Voltage Rating Unit Vg S -5 0 Vdc Drain Current


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    PDF 2N3821, 2N3822 2N3824 O-206AF) 2N3821 2N4220 2N3822, 2n3824 2N3824 equivalent 2N3822 MOTOROLA 2N3822 equivalent 2N4220 MOTOROLA 2N3621

    Untitled

    Abstract: No abstract text available
    Text: "H INTER F E T CORP DE I 4fl21.ßflñ DOOOQflfl 5 METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS ’ v.; ">r ELECTRICAL CHARACTERISTICS al TA = 25°C ? ' V BRJGSS limits less @Vgs (V Min. (V) Max. (V) 2N3824 -50 -1.0 -0.1 -30 -30 -1.0 -0.1 -20 2N3966 2N3970


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    PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392

    2N3824

    Abstract: No abstract text available
    Text: 2N3824 CALOGIC CORP 4flE D 1Û44322 N-ChannelJFET Switch 0 D 0 0 E ci3 =1 calocflc CORPORATION V 2N3824 T-SS-2S A B SO LU T E MAXIMUM RATINGS T a = 25°C unless otherwise noted FEATU R ES • rds<250 Ohm s • lD(off)<0.1 n A Gate-Source or Gate-Drain Voltage . -50V


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    PDF 2N3824 300mW 2N3824

    T0220H

    Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
    Text: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758


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    PDF 2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H 2N6795 T018 T046

    Untitled

    Abstract: No abstract text available
    Text: B4 9-97 2N3823, 2N3824 N-CHAN NEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR VHF AMPLIFIERS SMALL SIGNAL AMPLIFIERS Absolute maximum ratings at TA = 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


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    PDF 2N3823, 2N3824 2N3823 400pA SMP3823, SMP3824 0D075M

    FET BFW10

    Abstract: N CHANNEL FET BFW10 BFW10 FET FET BFW11 N CHANNEL FET BFW61 2N2497 2n2386 2N2498 FET BFW61 BFW61
    Text: DU FET's Metal Can ^ For General Purpose Am plifiers Case Outlines I 1 1 For Chopping and Switching C iss Crss io S max. max. off •nA ohms pF pF IDSS min. X a « Typ« No. Case 2N3824 T 072 N 50 0.1 250 6 3 0.1 2N3970 2N3971 2N3972 T018 TOI 8 TOI 8 N N


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    PDF 2N3824 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 FET BFW10 N CHANNEL FET BFW10 BFW10 FET FET BFW11 N CHANNEL FET BFW61 2N2497 2n2386 2N2498 FET BFW61 BFW61

    2n3824

    Abstract: 2N3822 equivalent 2N3823 equivalent 2N3824 equivalent
    Text: TYPES 2N3821 THRU 2N3824 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 9 , M A R C H 1973 2N3821, 2N3822 FO R S M A L L-S IG N A L A P P LIC A T IO N S • Low lG S S : < 10 0 pA • Low Cj$s : < 6 pF • High


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    PDF 2N3821 2N3824 2N3821, 2N3822 2N3823 2N3822 equivalent 2N3823 equivalent 2N3824 equivalent

    2N3824

    Abstract: N-Channel JFET Switch TO72 package n-channel jfet
    Text: 2N3824 CALOGIC 4öE CORP 1Û44322 D OOOOE^a 1 • CGC calori* N-ChannelJFET Switch CORPO RATIO N v 'T-ss-zs 2N3824 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted FEATURES • rds<250 0 h m s • lD(off><0.1nA Gate-Source or Gate-Drain Voltage . -50V


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    PDF 2N3824 -T-35 200oc 10sec) 300mW 2N3824 N-Channel JFET Switch TO72 package n-channel jfet

    2n4391, Voltage controlled

    Abstract: sw 2n4093 2N5906
    Text: -Ælitran Devices. Inc. knot? ¥ ©[i[L[i©¥ tFcnr© ^©[D yj(gir ©attæmkqx IN TRO D U CTIO N TO TH E F E T S SDF1001 thru 1006 FOR SWITCHING In most switching applications it is d esirable to have a high O N -O FF-ratio. It is also desirable to b e ab le to switch both


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    PDF SDF1001 2N4391 2N4393 2N4861 2N5S92 2N4119 2N5906 2NS432 2N5433 2NS397-2N 2n4391, Voltage controlled sw 2n4093

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    PN4858

    Abstract: 2N4392 NATIONAL SEMICONDUCTOR 2N4393 PN4856 TIS75 2N3971 2N4393, NATIONAL pn4093 PN4857 TIS74
    Text: DDBTDIM CM CM CM CM CM O O O O O CM CM CM CM CM o O O O O CM CM CM CM CM 0 * 0 O O O CM CM CM h * r o o o o o K IO O 1 - T - T­ IO 40 i o IO IO ^ ^ in m i n lo Jo i n i n in in -r- t— t— CO CO in in in m w 00 O r in m m m in © © oo CM cm m issss


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    PDF b5D113D 2N5653 2N5654 PN4091 PN4092 PN4093 PN4858 PN4859 PN4860 PN4861 2N4392 NATIONAL SEMICONDUCTOR 2N4393 PN4856 TIS75 2N3971 2N4393, NATIONAL PN4857 TIS74

    n-channel fet to-92

    Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
    Text: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685


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    PDF 2N3684 2N3685 2N3686 2N3687 T0-72 2N3821 2N3822 2N3823 n-channel fet to-92 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan

    Untitled

    Abstract: No abstract text available
    Text: Ä 1TM, Q ( N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .017" i f t l (0.432mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 016 " (0.406mm) Die Size- It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .


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    PDF 432mm) 406mm) 0254mm) 2N3821 2N3824, 2N3921 2N3922, 2N5545 2N5547

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0


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    PDF 2N4393 2N4856 2N4856A 2N4857 2N3824